{"id":1295,"date":"2024-12-24T11:21:16","date_gmt":"2024-12-24T02:21:16","guid":{"rendered":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/?page_id=1295"},"modified":"2024-12-24T11:21:16","modified_gmt":"2024-12-24T02:21:16","slug":"publications2011","status":"publish","type":"page","link":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/publications2011\/","title":{"rendered":"Publications (2011\uff5e2020)"},"content":{"rendered":"\n

2020<\/strong><\/p>\n\n\n\n

\u201cStrain engineering of Si\/Ge heterostructures on Ge-on-Si platform\u201d
Kentarou Sawano, Youya Wagatsuma, Md. Mahfuz Alam, Kaisei Omata, Kenta Niikura, Shougo Shibata, Yusuke Hoshi, Michihiro Yamada and Kohei Hamaya
ECS Transactions 98, 267-276 (2020).
DOI: 10.1149\/09805.0267ecst<\/a><\/p>\n\n\n\n

\u201cNanostructural effect on thermoelectric properties in Si films containing iron silicide nanodots\u201d
Shunya Sakane, Takafumi Ishibe, Tatsuhiko Taniguchi, Takahiro Hinakawa, Ryoya Hosoda, Kosei Mizuta, Md. Mahfuz Alam, Kentarou Sawano, and Yoshiaki Nakamura
Japanese Journal of Applied Physics 59, SFFB01 (2020)
DOI: \/10.7567\/1347-4065\/ab5b58<\/a><\/p>\n\n\n\n

\u201cHole mobility enhancement observed in (110)-oriented strained Si\u201d
Keisuke Arimoto, Naoto Utsuyama, Shohei Mitsui, Kei Satoh, Takane Yamada, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, and Kiyokazu Nakagawa
Japanese Journal of Applied Physics 59, SGGK06 (2020)\u3000\u3000\u3000
DOI: \/10.7567\/1347-4065\/ab6591<\/a><\/p>\n\n\n\n

\u201cHole mobility in Strained Si\/Relaxed SiGe\/Si(110) hetero structures studied by gated Hall measurements\u201d
Daichi Namiuchi, Atsushi Onogawa, Taisuke Fujisawa, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa, and Keisuke Arimoto
Materials Science in Semiconductor Processing 113, 105052 (2020) \u3000
DOI: \/10.1016\/j.mssp.2020.105052<\/a><\/p>\n\n\n\n

“Enhanced photoluminescence from strained Ge-on-Insulator surface-passivated with hydrogenated amorphous Si”
Kenta Niikura, Natsuki Yamahata, Yusuke Hoshi, Tsukasa Takamura, Kimihiko Saito, Makoto Konagai and Kentarou Sawano
Materials Science in Semiconductor Processing 115, 105104 (2020)
DOI: \/10.1016\/j.mssp.2020.105104<\/a><\/p>\n\n\n\n

“Inverse local magnetoresistance effect up to room temperature in ferromagnet-semiconductor lateral spin-valve devices”
Takahiro Naito, Michihiro Yamada, Shinya Yamada, Takeshi Kanashima, Kentarou Sawano and Kohei Hamaya
Materials Science in Semiconductor Processing 113, 105046 (2020)
DOI: \/10.1016\/j.mssp.2020.105046<\/a><\/p>\n\n\n\n

\u201cCrack formation in strained SiGe grown on Ge-on-Si(111) and its suppression by patterning substrates\u201d
Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
Materials Science in Semiconductor Processing, 117, 105153 (2020)
DOI: \/10.1016\/j.mssp.2020.105153<\/a><\/p>\n\n\n\n

“Large, tunable valley splitting and single-spin relaxation mechanisms in a Si\/SixGe1-x quantum dot”
Arne Hollmann, Tom Struck, Veit Langrock, Andreas Schmidbauer, Floyd Schauer, Tim Leonhardt, Kentarou Sawano, Helge Riemann, Nikolay V. Abrosimov, Dominique Bougeard, and Lars R. Schreiber
Phys. Rev. Applied 13, 034068 (2020).
DOI: \/10.1103\/PhysRevApplied.13.034068<\/a><\/p>\n\n\n\n

\u201cSuppression of Donor-Driven Spin Relaxation in Strained Si0.1Ge0.9\u201d
T. Naito, M. Yamada, S. Yamada, K. Sawano and K. Hamaya
Physical Review Applied 13, 054025 (2020).
DOI: \/10.1103\/PhysRevApplied.13.054025<\/a><\/p>\n\n\n\n

\u201cIncreased critical thickness for strained SiGe on Ge-on-Si(111)\u201d
Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
ECS Transactions 98, 499 (2020).
DOI: 10.1149\/09805.0499ecst<\/a><\/p>\n\n\n\n

\u201cStrong room-temperature electroluminescence from Ge-on-Si by precise in-situ doping control\u201d
Kodai Yamada, Yusuke Hoshi and Kentarou Sawano
ECS Transactions 98, 513 (2020).
DOI: 10.1149\/09805.0513ecst<\/a><\/p>\n\n\n\n

Engineering Strain, Defects and Electronic Properties of (110)-Oriented Strained Si
K. Arimoto, J. Yamanaka, K. O. Hara, K. Sawano, N. Usami and K. Nakagawa
ECS Transactions 98, 277 (2020).
DOI: 10.1149\/09805.0277ecst<\/a><\/p>\n\n\n\n

“Thermoelectric Si1\u2212xGex and Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators”
Tatsuhiko Taniguchi, Takafumi Ishibe, Ryoya Hosoda, Youya Wagatsuma, Md. Mahfuz Alam, Kentarou Sawano, Mutsunori Uenuma, Yukiharu Uraoka, Yuichiro Yamashita, Nobuya Mori, and Yoshiaki Nakamura
Appl. Phys. Lett. 117, 141602 (2020)
DOI: \/10.1063\/5.0023820<\/a><\/p>\n\n\n\n

“Reduced Inhomogeneous Broadening in Hexagonal Boron Nitride-Encapsulated MoTe2 Monolayers by Thermal Treatment”
Shunya Hayashida, Risa Saitoh, Kenji Watanabe, Takashi Taniguchi, Kentarou Sawano, and Yusuke Hoshi
ACS Appl. Electron. Mater. 2, 2739\u22122744 (2020).
DOI: \/10.1021\/acsaelm.0c00452<\/a><\/p>\n\n\n\n

“Low-frequency spin qubit energy splitting noise in highly purified 28Si\/SiGe”
Tom Struck, Arne Hollmann, Floyd Schauer, Olexiy Fedorets, Andreas Schmidbauer, Kentarou Sawano, Helge Riemann, Nikolay V. Abrosimov, \u0141ukasz Cywi\u0144ski, Dominique Bougeard and Lars R. Schreiber
npj Quantum Information 6, 40 (2020).
DOI: \/10.1038\/s41534-020-0276-2<\/a><\/p>\n\n\n\n

\u201cSpin injection through energy-band symmetry matching with high spin polarization in atomically controlled ferromagnet\/ferromagnet\/ semiconductor structures\u201d
Michihiro Yamada, Fumiaki Kuroda, Makoto Tsukahara, Shinya Yamada, Tetsuya Fukushima, Kentarou Sawano, Tamio Oguchi and Kohei Hamaya
NPG Asia Materials (2020) 12:47
DOI: \/10.1038\/s41427-020-0228-5<\/a><\/p>\n\n\n\n

<\/div>\n\n\n\n

2019<\/strong><\/p>\n\n\n\n

\u201cFabrication of Ge MOS with low interface trap density by ALD of Al2O3 on epitaxially grown Ge\u201d
Ryotaro Matsuoka, Eriko Shigesawa, Satoru Miyamoto, Kentarou Sawano and Kohei M Itoh
Semiconductor Science and Technology 34, 014004 (5pp) (2019)
DOI: \/10.1088\/1361-6641\/aaf19b<\/a><\/p>\n\n\n\n

\u201cEffect of strain on the binding energy of Ge 2p and 3d core level\u201d
R. Sano, S. Konoshima, K. Sawano and H. Nohira
Semiconductor Science and Technology 34, 014006 (2019)
DOI: \/10.1088\/1361-6641\/aaf3ee<\/a><\/p>\n\n\n\n

\u201cThermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled Si nanostructures\u201d
Shunya Sakane, Takafumi Ishibe, Tatsuhiko Taniguchi, Nobuyasu Naruse, Yutaka Mera, Takeshi Fujita, Md. Mahfuz Alam, Kentarou Sawano, Nobuya Mori, Yoshiaki Nakamura
Materials Today Energy 13, 56-63 (2019).
DOI: \/10.1016\/j.mtener.2019.04.014<\/a><\/p>\n\n\n\n

\u201cCritical thickness of strained Si1-xGex on Ge(111) and Ge-on-Si(111)\u201d
Md. Mahfuz Alam, Youya Wagatsuma, Kazuya Okada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano
Applied Physics Express 12, 081005 (2019)\u3000\u3000
DOI: \/10.7567\/1882-0786\/ab2db8<\/a><\/p>\n\n\n\n

\u201cNonmonotonic bias dependence of local spin accumulation signals in ferromagnet\/semiconductor lateral spin-valve devices\u201d
Y. Fujita, M. Yamada, M. Tsukahara, T. Naito, S. Yamada, K. Sawano, and K. Hamaya
Physical Review B 100, 024431 (2019).
DOI: \/10.1103\/PhysRevB.100.024431<\/a><\/p>\n\n\n\n

\u201cHigh thermoelectric performance in high crystallinity epitaxial Si films containing silicide nanodots with low thermal conductivity\u201d
Shunya Sakane, Takafumi Ishibe, Takahiro Hinakawa, Nobuyasu Naruse , Yutaka Mera, Md. Mahfuz Alam, Kentarou Sawano, and Yoshiaki Nakamura
Appl. Phys. Lett. 115, 182104 (2019).
DOI: \/10.1063\/1.5126910<\/a><\/p>\n\n\n\n

\u201cSemiballistic thermal conduction in polycrystalline SiGe nanowires\u201d
Noboru Okamoto, Ryoto Yanagisawa, Roman Anufriev, Md. Mahfuz Alam, Kentarou Sawano, Masashi Kurosawa, and Masahiro Nomura
Appl. Phys. Lett. 115, 253101 (2019).
DOI: \/10.1063\/1.5130659<\/a><\/p>\n\n\n\n

“Conduction Type Control of Ge-on-Insulator : Combination of Smart-CutTM and Defect Elimination”
K. Yamamoto, K. Nakae, H. Akamine, D. Wang, H. Nakashima, Md M. Alam, K. Sawano, Z. Xue, M. Zhang, and Z. Di
ECS Transactions, 93 (1) 73-77 (2019)
DOI: \/10.1149\/09301.0073ecst<\/a><\/p>\n\n\n\n

<\/div>\n\n\n\n

2018<\/strong><\/p>\n\n\n\n

\u201cHole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-source molecular beam epitaxy\u201d
Motoki Satoh, Keisuke Arimoto, Junji Yamanaka, Kentarou Sawano, Yasuhiro Shiraki, and Kiyokazu Nakagawa
Journal of Applied Physics 123, 161529 (2018).
DOI: \/10.1063\/1.5004077<\/a><\/p>\n\n\n\n

\u201cSpin Absorption Effect at Ferromagnet\/Ge Schottky-Tunnel Contacts\u201d
Michihiro Yamada, Yuichi Fujita, Shinya Yamada, Kentarou Sawano and Kohei Hamaya
Materials 11, 150 (2018).
DOI: \/10.3390\/ma11010150<\/a><\/p>\n\n\n\n

\u201cResonant light emission from uniaxially tensile-strained Ge microbridges\u201d
Peiji Zhou, Xuejun Xu, Sho Matsushita, Kentarou Sawano and Takuya Maruizumi
Japanese Journal of Applied Physics 57, 04FH10 (2018).
DOI: \/10.7567\/JJAP.57.04FH10<\/a><\/p>\n\n\n\n

Growth and characterization of low composition Ge, x in epi-Si1-xGex (x \u2264 10 %) active layer for fabrication of hydrogenated bottom solar cell.
M. Ajmal Khan, R. Sato, K. Sawano, P. Sichanugrist, A. Lukyanov and Y. Ishikawa
Journal of Physics D: Applied Physics 51, 185107 (11 pp) (2018).
DOI: \/10.1088\/1361-6463\/aab80d<\/a><\/p>\n\n\n\n

\u201cFormation of uniaxial strained Ge via control of dislocation alignment in Si\/Ge heterostructures\u201d
Shiori Konoshima, Eisuke Yonekura, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, and Kentarou Sawano
AIP Advances 8, 075112 (9 pages) (2018).
DOI: \/10.1063\/1.5011397<\/a><\/p>\n\n\n\n

\u201cPure spin current transport in a SiGe alloy\u201d
Takahiro Naito, Michihiro Yamada, Makoto Tsukahara, Shinya Yamada, Kentarou Sawano, and Kohei Hamaya
Applied Physics Express 11, 053006 (2018)
DOI: \/10.7567\/APEX.11.053006<\/a><\/p>\n\n\n\n

\u201cCorrelation between spin transport signal and Heusler\/semiconductor interface quality in lateral spin-valve devices\u201d
B. Kuerbanjiang, Y. Fujita, M. Yamada, S. Yamada, A. M. Sanchez, P. J. Hasnip, A. Ghasemi, D. Kepaptsoglou, G. Bell, K. Sawano, K. Hamaya, and V. K. Lazarov
Phys. Rev. B 98, 115304 (2018)
DOI: \/10.1103\/PhysRevB.98.115304<\/a><\/p>\n\n\n\n

\u201cSpin transport and relaxation in germanium\u201d
Kohei Hamaya, Yuichi Fujita, Michihiro Yamada, Makoto Kawano, Shinya Yamada and Kentarou Sawano
Journal of Physics D: Applied Physics 51, 393001 (2018)
DOI: \/10.1088\/1361-6463\/aad542<\/a><\/p>\n\n\n\n

\u201cStructural properties of compressive strained Ge channels fabricated on Si (111) and Si (100)\u201d
Md. Mahfuz Alam, Yusuke Hoshi and Kentarou Sawano
Semiconductor Science and Technology 33, 124008 (6pp) (2018)
DOI: \/10.1088\/1361-6641\/aae575<\/a><\/p>\n\n\n\n

\u201cEffects of post annealing on in-situ n-doped Ge-on-Si\u201d
Yuta Kumazawa, Xuejun Xu, Takuya Maruizumi, Kentarou Sawano
Semiconductor Science and Technology 33, 124006 (7pp) (2018)
DOI: \/10.1088\/1361-6641\/aae62e<\/a><\/p>\n\n\n\n

\u201cStability of strain in Si layers formed on SiGe\/Si(110) heterostructures\u201d
Keisuke Arimoto, Atsushi Onogawa, Shingo Saito, Takane Yamada, Kei Sato, Naoto Utsuyama, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O Hara, Kentarou Sawano and Kiyokazu Nakagawa
Semiconductor Science and Technology 33, 124016 (8pp) (2018)
DOI: \/10.1088\/1361-6641\/aaeb10<\/a><\/p>\n\n\n\n

\u201cStudy on Al2O3\/Ge interface formed by ALD directly on epitaxial Ge\u201d
Eriko Shigesawa, Ryotaro Matsuoka, Masashi Fukumoto, Ryosuke Sano, Kohei M Itoh, Hiroshi Nohira and Kentarou Sawano
Semiconductor Science and Technology 33, 124020 (4pp) (2018)
DOI: \/10.1088\/1361-6641\/aaec51<\/a><\/p>\n\n\n\n

\u201cObservation of local magnetoresistance signals in a SiGe-based lateral spin-valve device\u201d
Michihiro Yamada, Takahiro Naito, Makoto Tsukahara, Shinya Yamada, Kentarou Sawano and Kohei Hamaya
Semiconductor Science and Technology 33, 114009 (4pp) (2018)
DOI: \/10.1088\/1361-6641\/aae34f<\/a><\/p>\n\n\n\n

<\/div>\n\n\n\n

2017<\/strong><\/p>\n\n\n\n

\u201cLight emission enhancement from Ge quantum dots with phosphorous \u03b4-doped neighboring confinement structures\u201d
K. Sawano, T. Nakama, K. Mizutani, N. Harada, X. Xu, T. Maruizumi
Journal of Crystal Growth 477, 131\u2013134 (2017)
DOI: \/10.1016\/j.jcrysgro.2017.03.008<\/a><\/p>\n\n\n\n

\u201cHole mobility in strained Si\/SiGe\/vicinal Si(110) grown by gas source MBE\u201d
Keisuke Arimoto, Sosuke Yagi, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Noritaka Usami, Kiyokazu Nakagawa
Journal of Crystal Growth 468, 625-629 (2017)
DOI: \/10.1016\/j.jcrysgro.2016.12.076<\/a><\/p>\n\n\n\n

\u201cTEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing\u201d
Junji Yamanaka, Shigenori Inoue, Keisuke Arimoto, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Atsushi Moriya, Yasuhiro Inokuchi, Yasuo Kunii
Journal of Materials Science and Chemical Engineering, 2017, 5, 15-25
DOI: \/10.4236\/msce.2017.51003<\/a><\/p>\n\n\n\n

\u201cLarge impact of impurity concentration on spin transport in degenerate n-Ge\u201d
M. Yamada, Y. Fujita, M. Tsukahara, S. Yamada, K. Sawano, and K. Hamaya
Physical Review B 95, 161304 (R) 1~5 (2017)
DOI: \/10.1103\/PhysRevB.95.161304<\/a><\/p>\n\n\n\n

\u201cThermoelectric Properties of Epitaxial b-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement\u201d
Tatsuhiko Taniguchi, Shunya Sakane, Shunsuke Aoki, Ryo Okuhata, Takafumi Ishibe, Kentaro Watanabe, Takeyuki Suzuki, Takeshi Fujita, Kentarou Sawano, and Yoshiaki Nakamura
Journal of Electronic Materials, Vol. 46, No. 5, 3235-3241 (2017)
DOI: \/10.1007\/s11664-016-4997-0<\/a><\/p>\n\n\n\n

\u201cStudy on ion implantation conditions in fabricating compressively strained Si\/relaxed Si1\u2212xCx heterostructures using the defect control by ion implantation technique\u201d
You Arisawa, Kentarou Sawano, Noritaka Usami
Journal of Crystal Growth 468, 601-604 (2017).
DOI: \/10.1016\/j.jcrysgro.2016.12.065<\/a><\/p>\n\n\n\n

\u201cThermal stability of compressively strained Si\/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates\u201d
You Arisawa, Yusuke Hoshi, Kentarou Sawano, Junji Yamanaka, Keisuke Arimoto, Chiaya Yamamoto, Noritaka Usami
Materials Science in Semiconductor Processing 70, 127-132 (2017)
DOI: \/10.1016\/j.mssp.2016.11.024<\/a><\/p>\n\n\n\n

\u201cHighly n-doped germanium-on-insulator microdisks with circular Bragg gratings\u201d
Xuejun Xu, Hideaki Hashimoto, Kentarou Sawano, and Takuya Maruizumi
Optics Express 25, 6550-6560 (2017)
DOI: \/10.1364\/OE.25.006550<\/a><\/p>\n\n\n\n

\u201cPattern-dependent anisotropic stress evaluation in SiGe epitaxially grown on a Si substrate with selective Ar+ ion implantation using oil-immersion Raman spectroscopy\u201d
Shotaro Yamamoto, Daisuke Kosemura, Kazuma Takeuchi, Seiya Ishihara, Kentarou Sawano, Hiroshi Nohira and Atsushi Ogura
Japanese Journal of Applied Physics 56, 051301 (2017)
DOI: \/10.7567\/JJAP.56.051301<\/a><\/p>\n\n\n\n

\u201cSpin Transport and Relaxation up to 250 K in Heavily Doped n-Type Ge Detected Using Co2FeAl0.5Si0.5 Electrodes\u201d
Y. Fujita, M. Yamada, M. Tsukahara, T. Oka, S. Yamada, T. Kanashima, K. Sawano, and K. Hamaya
Physical Review Applied 8, 014007 (2017)\u3000\u3000\u3000
DOI: \/10.1103\/PhysRevApplied.8.014007<\/a><\/p>\n\n\n\n

\u201cRoom-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements\u201d
Michihiro Yamada, Makoto Tsukahara, Yuichi Fujita, Takahiro Naito, Shinya Yamada, Kentarou Sawano, and Kohei Hamaya
Applied Physics Express 10, 093001 (2017)
DOI: \/10.7567\/APEX.10.093001<\/a><\/p>\n\n\n\n

\u201cControl of electrical properties in Heusler-alloy\/Ge Schottky tunnel contacts by using phosphorous \u03b4-doping with Si-layer insertion\u201d
Michihiro Yamada, Yuichi Fujita, Shinya Yamada, Takeshi Kanashima, Kentarou Sawano, Kohei Hamaya
Materials Science in Semiconductor Processing 70, 83\u201385 (2017)
DOI: \/10.1016\/j.mssp.2016.07.025<\/a><\/p>\n\n\n\n

\u201cFabrication of high-quality strain relaxed SiGe(110) films by controlling defects via ion implantation\u201d
M. Kato, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano
Journal of Crystal Growth 477, 197-200 (2017).
DOI: \/10.1016\/j.jcrysgro.2017.05.022<\/a><\/p>\n\n\n\n

\u201cLocal anisotropic strain evaluation in thin Ge epitaxial film using SiGe stressor template grown on Ge substrate by selective ion implantation\u201d
Kazuma Takeuchi, Ryo Yokogawa, Seiya Ishihara, Shotaro Yamamoto, Shiori Konoshima, Kentarou Sawano, and Atsushi Ogura
Japanese Journal of Applied Physics 56, 110313 (2017).
DOI: \/10.7567\/JJAP.56.110313<\/a><\/p>\n\n\n\n

<\/div>\n\n\n\n

2016<\/strong><\/p>\n\n\n\n

\u201cStructural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator\u201d
K. Sawano, Y. Hoshi, S. Kubo, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Hamaya, M. Miyao, Y. Shiraki
Thin Solid Films 613, 24-28 (2016).
DOI: \/10.1016\/j.tsf.2015.11.020<\/a><\/p>\n\n\n\n

\u201cStraining of Group IV Semiconductor Materials for Bandgap and Mobility Engineering\u201d
Kentarou Sawano, Xuejun Xu, Shiori Konoshima, Nayuta Shitara, Takeshi Ohno, and Takuya Maruizumi
ECS transaction 75, 191-197 (2016)
DOI: \/10.1149\/07504.0191ecst<\/a><\/p>\n\n\n\n

\u201cAnisotropic Strain Introduction into Si\/Ge Hetero Structures\u201d
Kentarou Sawano, Shiori Konoshima, Junji Yamanaka, Keisuke Arimoto, and Kiyokazu Nakagawa
ECS transaction 75, 563-569 (2016)
DOI: \/10.1149\/07508.0563ecst<\/a><\/p>\n\n\n\n

\u201cCompressively strained Si\/Si1-xCx heterostructures formed on Ar ion implanted Si(100) substrates\u201d
Yusuke Hoshi, You Arisawa, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, and Noritaka Usami
Japanese Journal of Applied Physics 55, 031302 (2016).
DOI: \/10.7567\/JJAP.55.031302<\/a><\/p>\n\n\n\n

\u201cSuppression of segregation of the phosphorus \u03b4-doping layer in germanium by incorporation of carbon\u201d
Michihiro Yamada, Kentarou Sawano, Masashi Uematsu, Yasuo Shimizu, Koji Inoue, Yasuyoshi Nagai, and Kohei M. Itoh
Japanese Journal of Applied Physics 55, 031304-1~5 (2016).
DOI: \/10.7567\/JJAP.55.031304<\/a><\/p>\n\n\n\n

\u201cImpact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells\u201d
Mohammad Maksudur Rahman, Ming-Yi Lee, Yi-Chia Tsai, Akio Higo, Halubai Sekhar, Makoto Igarashi1, Mohd Erman Syazwan, Yusuke Hoshi, Kentarou Sawano, Noritaka Usami, Yiming Li and Seiji Samukawa
Progress in Photovoltaics: Research and Applications 24, 774-780 (2016).
DOI : 10.1002\/pip.2726<\/p>\n\n\n\n

\u201cEnhanced light emission from germanium microdisks on silicon by surface passivation through thermal oxidation\u201d
Xuejun Xu, Hideaki Hashimoto, Kentarou Sawano, Hiroshi Nohira, and Takuya Maruizumi
Applied Physics Express 9, 052101-1~4 (2016)
DOI: \/10.7567\/APEX.9.052101<\/a><\/p>\n\n\n\n

\u201cA low-temperature fabricated gate-stack structure for Ge-based MOSFET with ferromagnetic epitaxial Heusler-alloy\/Ge electrodes\u201d
Yuichi Fujita, Michihiro Yamada, Yuta Nagatomi, Keisuke Yamamoto, Shinya Yamada, Kentarou Sawano, Takeshi Kanashima, Hiroshi Nakashima, and Kohei Hamaya
Japanese Journal of Applied Physics 55, 063001-1~4 (2016). \u3000
DOI: 10.7567\/JJAP.55.063001<\/a><\/p>\n\n\n\n

\u201cTemperature-independent spin relaxation in heavily doped n-type germanium\u201d
Y. Fujita, M. Yamada, S. Yamada, T. Kanashima, K. Sawano, and K. Hamaya
Physical Review B 94, 245302-1~5 (2016)
DOI: \/10.1103\/PhysRevB.94.245302<\/a><\/p>\n\n\n\n

\u201cThermal conduction in Si and SiGe phononic crystals explained by phonon mean free path spectrum\u201d
Masahiro Nomura, Junki Nakagawa, Kentarou Sawano, Jeremie Maire, and Sebastian Volz
Applied Physics Letters 109, 173104-1~4 (2016)
DOI: \/10.1063\/1.4966190<\/a><\/p>\n\n\n\n

\u201cEnhanced light emission from N-doped Ge microdisks by thermal oxidation\u201d\u3000
Hideaki Hashimoto, Xuejun Xu, Kentarou Sawano, and Takuya Maruizumi\u3000
ECS Transactions, 75(8): 689-693 (2016)
DOI: \/10.1149\/07508.0689ecst<\/a><\/p>\n\n\n\n

\u201cIndependent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials\u201d
S. Yamasaka, K. Watanabe, S. Sakane, S. Takeuchi, A. Sakai, K. Sawano, and Y. Nakamura
Scientific Report 6, 22838-1-8 (2016).
DOI: \/10.1038\/srep22838<\/a><\/p>\n\n\n\n

<\/div>\n\n\n\n

2015<\/strong><\/p>\n\n\n\n

\u201cUltralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion\u201d
Xuejun Xu, Xiaoxin Wang, Keisuke Nishida, Koki Takabayashi, Kentarou Sawano, Yasuhiro Shiraki, Haofeng Li, Jifeng Liu, and Takuya Maruizumi
Applied Physics Express 8, 092101 (2015)
DOI: \/10.7567\/APEX.8.092101<\/a><\/p>\n\n\n\n

\u201cSuppression of surface segregation of the phosphorous \u03b4-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium\u201d
Michihiro Yamada, Kentarou Sawano, Masashi Uematsu and Kohei M. Itoh
Appl. Phys. Lett. 107, 132101 (2015)
DOI: \/10.1063\/1.4931939<\/a><\/p>\n\n\n\n

<\/div>\n\n\n\n

2014<\/strong><\/p>\n\n\n\n

\u201cUniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates\u201d
K. Sawano, Y. Hoshi, S. Kubo, S. Yamada, K. Nakagawa, Y. Shiraki
Journal of Crystal Growth 401, 758\u2013761 (2014).
DOI: \/10.1016\/j.jcrysgro.2014.02.014<\/a><\/p>\n\n\n\n

\u201cHighly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy\u201d
Keisuke Nishida, Xuejun Xu, Kentarou Sawano, Takuya Maruizumi, Yasuhiro Shiraki
Thin Solid Films 557, 66-69 (2014)
DOI: \/10.1016\/j.tsf.2013.10.082<\/a><\/p>\n\n\n\n

\u201cGreatly enhanced generation efficiency of pure spin currents in Ge using Heusler compound Co2FeSi electrodes\u201d
Kenji Kasahara, Yuichi Fujita, Shinya Yamada, Kentarou Sawano, Masanobu Miyao, and Kohei Hamaya
Applied Physics Express 7, 033002 (2014)
DOI: \/10.7567\/APEX.7.033002<\/a><\/p>\n\n\n\n

\u201cRoom-temperature electrical creation of spin accumulation in n-Ge using highly resistive Fe3Si\/n+-Ge Schottky-tunnel contacts\u201d
Kohei Hamaya, Gotaro Takemoto, Yuzo Baba, Kenji Kasahara, Shinya Yamada, Kentarou Sawano, Masanobu Miyao
Thin Solid Films 557 (2014) 382\u2013385
DOI: \/10.1016\/j.tsf.2013.08.120<\/a><\/p>\n\n\n\n

\u201cCharge-noise-free Lateral Quantum Dot Devices with Undoped Si\/SiGe Wafer\u201d
T. Obata, K. Takeda, J. Kamioka, T. Kodera, W.M. Akhtar, K. Sawano, S. Oda, Y. Shiraki, and S. Tarucha
Proceedings of the 12th Asia Pacific Physics Conference, JPS Conf. Proc. , 012030 (2014)<\/p>\n\n\n\n

\u201cReliable reduction of Fermi-level pinning at atomically matched metal\/Ge interfaces by sulfur treatment\u201d
K. Kasahara, S. Yamada, T. Sakurai, K. Sawano, H. Nohira, M. Miyao, and K. Hamaya
Applied Physics Letters 104, 172109 (2014)
DOI: \/10.1063\/1.4875016<\/a><\/p>\n\n\n\n

\u201cCubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained-Ge\/SiGe Quantum Well\u201d
Rai Moriya, Kentarou Sawano, Yusuke Hoshi, Satoru Masubuchi, Yasuhiro Shiraki, Andreas Wild, Christian Neumann, Gerhard Abstreiter, Dominique Bougeard, Takaaki Koga, and Tomoki Machida
Physical Review Letters 113, 086601 (2014).
DOI: \/10.1103\/PhysRevLett.113.086601<\/a><\/p>\n\n\n\n

<\/div>\n\n\n\n

2013<\/strong><\/p>\n\n\n\n

\u201cOn the origin of the uniaxial strain induced in Si\/Ge heterostructures with selective ion implantation technique\u201d
K. Sawano, Y. Hoshi, S. Nagakura, K. Arimoto, K. Nakagawa, N. Usami, Y. Shiraki
Journal of Crystal Growth 378, 251\u2013253 (2013).
DOI: \/10.1016\/j.jcrysgro.2012.12.100<\/a><\/p>\n\n\n\n

\u201cFormation of compressively strained SiGe\/Si(110) heterostructures and their characterization\u201d
K. Arimoto, T. Obata, H. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano and Y. Shiraki,
J. Cryst. Growth, 362, pp. 282-287 (2013).
DOI: 10.1016\/j.jcrysgro.2011.12.082<\/a><\/p>\n\n\n\n

\u201dRoom-temperature sign reversed spin accumulation signals in silicon-based devices using an atomically smooth Fe3Si\/Si(111) contact\u201d
Y. Fujita, S. Yamada, Y. Ando, K. Sawano, H. Itoh, M. Miyao, and K. Hamaya
J. Appl. Phys. 113, 013916 (2013).
DOI: \/10.1063\/1.4773072<\/a><\/p>\n\n\n\n

\u201cRoom-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a metal\u2013oxide\u2013semiconductor field effect transistor structure (invited)\u201d
K. Hamaya, Y. Ando, K. Masaki, Y. Maeda, Y. Fujita, S. Yamada, K. Sawano and M. Miyao
J. Appl. Phys. 113, 17C501 (2013).
DOI: \/10.1063\/1.4793501<\/a><\/p>\n\n\n\n

\u201cAn ultra-thin buffer layer for Ge epitaxial layers on Si\u201d
M. Kawano, S. Yamada, K. Tanikawa, K. Sawano, M. Miyao, and K. Hamaya
Appl. Phys. Lett. 102, 121908 (2013)
DOI: \/10.1063\/1.4798659<\/a><\/p>\n\n\n\n

\u201cQualitative study of temperature-dependent spin signals in n-Ge-based lateral devices with Fe3Si\/n+-Ge Schottky-tunnel contacts\u201d
K. Hamaya, Y. Baba, G. Takemoto, K. Kasahara, S. Yamada, K. Sawano, and M. Miyao
J. Appl. Phys. 113, 183713 (2013)\u3000\u3000
DOI: \/10.1063\/1.4804320<\/a><\/p>\n\n\n\n

\u201cGas-source MBE growth of strain-relaxed Si1-xCx on Si (100) substrates\u201d
Keisuke Arimoto, Shoichiro Sakai, Hiroshi Furukawa, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami, Yusuke Hoshi, Kentarou Sawano, Yasuhiro Shiraki
Journal of Crystal Growth 378, 212\u2013217 (2013).\u3000\u3000\u3000
DOI: \/10.1016\/j.jcrysgro.2012.12.152<\/a><\/p>\n\n\n\n

\u201cFormation of compressively strained Si\/S1-xCx\/Si(100) heterostructures using gas-source molecular beam epitaxy\u201d
K. Arimoto, H. Furukawa, J. Yamanaka, C. Yamamoto, K. Nakagawa, N. Usami, K. Sawano, Y. Shiraki
Journal of Crystal Growth 362, 276-281(2013).\u3000
DOI: \/10.1016\/j.jcrysgro.2011.12.084<\/a><\/p>\n\n\n\n

\u201cAR-HPES study on chemical bonding states of high-\u03ba\/high-\u03bc gate stacks for advanced CMOS\u201d
H. Nohira, A. Komatsu, K. Yamashita, K. Kakushima, H. Iwai, K. Sawano, Y. Shiraki
Journal of Electron Spectroscopy and Related Phenomena 190, 295\u2013301 (2013).
DOI: \/10.1016\/j.elspec.2013.06.010<\/a><\/p>\n\n\n\n

<\/div>\n\n\n\n

2012<\/strong><\/p>\n\n\n\n

\u201cFormation of Uniaxially Strained Si\/Ge Channels on SiGe Buffers Strain-controlled with Selective Ion Implantation\u201d
K. Sawano, Y. Hoshi, S. Nagakura, K. Arimoto, K. Nakagawa, N. Usami, and Y. Shiraki
ECS Transactions 50 (9), 815-820 (2012). \u3000
DOI: 10.1149\/05009.0815ecst<\/a><\/p>\n\n\n\n

\u201cFormation of Tensilely Strained Germanium-on-Insulator\u201d
Yusuke Hoshi, Kentarou Sawano, Kohei Hamaya, Masanobu Miyao, and Yasuhiro Shiraki
Applied Physics Express 5, 015701 (2012). \u3000
DOI: \/10.1143\/APEX.5.015701<\/a><\/p>\n\n\n\n

\u201cTemperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel\u201c
Y. Ando, K. Kasahara, S. Yamada, Y. Maeda, K. Masaki, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya
Physical Review B 85, 035320 (2012).
DOI: \/10.1103\/PhysRevB.85.035320<\/a><\/p>\n\n\n\n

\u201cSpin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts\u201d
K. Kasahara, Y. Baba, K. Yamane, Y. Ando, S. Yamada, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya
Journal of Applied Physics 111, 07C503 (2012).
DOI: \/10.1063\/1.3670985<\/a><\/p>\n\n\n\n

\u201cExperimental and theoretical analysis of the temperature dependence of the two-dimensional electron mobility in a strained Si quantum well\u201d
Takahisa Tanaka, Go Tsuchiya, Yusuke Hoshi, Kentarou Sawano, Yasuhiro Shiraki, and Kohei M. Itoh
Journal of Applied Physics 111, 073715 (2012). \u3000
DOI: \/10.1063\/1.3702464<\/a><\/p>\n\n\n\n

\u201cUpper limit of two-dimensional hole gas mobility in strained Ge\/SiGe Heterostructures\u201d
T. Tanaka, Y. Hoshi, K. Sawano, N. Usami, Y. Shiraki, and K. M. Itoh
Appl. Phys. Lett. 100, 222102 (2012).
DOI: \/10.1063\/1.4723690<\/a><\/p>\n\n\n\n

\u201cRoom-Temperature Observation of Size Effects in Photoluminescence of Si0.8Ge0.2\/Si Nanocolumns Prepared by Neutral Beam Etching\u201d
Rii Hirano, Satoru Miyamoto, Masahiro Yonemoto, Seiji Samukawa, Kentarou Sawano, Yasuhiro Shiraki, and Kohei M. Itoh
Applied Physics Express 5, 082004 (2012).
doi; 10.1143\/APEX.5.082004<\/p>\n\n\n\n

\u201cIn-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system\u201d
Tasuku Chiba, Ryuichi Masutomi, Kentarou Sawano, Yasuhiro Shiraki, and Tohru Okamoto
Physical Review B 86, 045310 (2012). \u3000\u3000
DOI: \/10.1103\/PhysRevB.86.045310<\/a><\/p>\n\n\n\n

\u201cAcceptor-Like States in SiGe Alloy Related to Point Defects Induced by Si+ Ion Implantation\u201d
Motoki Satoh, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, and Yasuhiro Shiraki
Jpn. J. Appl. Phys. 51, 105801 (2012). \u3000
DOI: \/10.1143\/JJAP.51.105801<\/a><\/p>\n\n\n\n

\u201cEffect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon\u201d
Y. Ando, S. Yamada, K. Kasahara, K. Sawano, M. Miyao, and K. Hamaya
Appl. Phys. Lett. 101, 232404 (2012)
DOI: \/10.1063\/1.4769221<\/a><\/p>\n\n\n\n

<\/div>\n\n\n\n

2011<\/strong><\/p>\n\n\n\n

\u201cEffects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels\u201d
K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, K. Arimoto, K. Nakagawa, N. Usami, Y. Shiraki
Microelectronic Engineering 88, 465\u2013468 (2011).<\/p>\n\n\n\n

\u201cFormation of ultra-shallow Ohmic contacts on n-Ge by Sb delta-doping\u201d
K. Sawano, Y. Hoshi, K. Kasahara, K. Yamane, K. Hamaya, M. Miyao and Y. Shiraki
MRS Proceedings 1305, aa17-30 (2011)<\/p>\n\n\n\n

\u201cLinewidth of Low-Field Electrically Detected Magnetic Resonance of Phosphorus in Isotopically Controlled Silicon\u201d
Hiroki Morishita, Eisuke Abe, Waseem Akhtar, Leonid S. Vlasenko, Akira Fujimoto, Kentarou Sawano, Yasuhiro Shiraki, Lukas Dreher, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-J. Pohl, Mike L. W. Thewalt, Martin S. Brandt, and Kohei M. Itoh
Applied Physics Express 4, 021302 (2011).<\/p>\n\n\n\n

\u201cAluminum oxide for an effective gate in Si\/SiGe two-dimensional electron gas systems\u201d
Yun-Sok Shin, Roland Brunner, Akihiro Shibatomi, Toshiaki Obata, Tomohiro Otsuka, Jun Yoneda, Yasuhiro Shiraki, Kentarou Sawano, Yasuhiro Tokura, Yuichi Harada, Koji Ishibashi and Seigo Tarucha
Semiconductor Science and Technology 26, 055004 (2011).<\/p>\n\n\n\n

\u201cBias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact\u201c
Y. Ando, K. Kasahara, K. Yamane, Y. Baba, Y. Maeda, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya
Appl. Phys. Lett. 99, 012113 (2011).<\/p>\n\n\n\n

\u201cMetallic Behavior of Cyclotron Relaxation Time in Two-Dimensional Systems\u201c
Ryuichi Masutomi, Kohei Sasaki, Ippei Yasuda, Akihito Sekine, Kentarou Sawano, Yasuhiro Shiraki, and Tohru Okamoto
Physical Review Letters 106, 196404 (2011).<\/p>\n\n\n\n

\u201cElectrical detection of cross relaxation between electron spins of phosphorus and oxygen-vacancy centers in silicon\u201d
W. Akhtar, H. Morishita, K. Sawano, Y. Shiraki, L. S. Vlasenko, and K. M. Itoh
Physical Review B 84, 045204 (2011).<\/p>\n\n\n\n

“Line width dependence of anisotropic strain state in SiGe films induced by selective ion implantation”
Y. Hoshi, K. Sawano, A. Yamada, S. Nagakura, N. Usami, K. Arimoto, K. Nakagawa, and Y. Shiraki
Applied Physics Express 4, 095701 (2011).<\/p>\n\n\n\n

\u201dSelf-diffusion in compressively strained Ge\u201d
Yoko Kawamura, Masashi Uematsu, Yusuke Hoshi, Kentarou Sawano, Maksym Myronov, Yasuhiro Shiraki, Eugene E. Haller, and Kohei M. Itoh
J. Appl. Phys. 110, 034906 (2011).<\/p>\n\n\n\n

\u201cElectric-field control of spin accumulation signals in silicon at room temperature\u201d
Y. Ando, Y. Maeda, K. Kasahara, S. Yamada, K. Masaki, Y. Hoshi, K. Sawano, K. Izunome, A. Sakai, M. Miyao, and K. Hamaya
Appl. Phys. Lett. 99, 132511 (2011).<\/p>\n\n\n\n

\u201cMechanism of Fermi level pinning at metal\/germanium interfaces\u201d
K. Kasahara, S. Yamada, K. Sawano, M. Miyao, and K. Hamaya
Physical Review B 84, 205301 (2011).<\/p>\n","protected":false},"excerpt":{"rendered":"2020 \u201cStrain engineering of Si\/Ge heterostructures on Ge-on-Si platform\u201dKentarou Sawano, Youya Wagatsuma, Md. […]","protected":false},"author":2,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-1295","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/pages\/1295","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/comments?post=1295"}],"version-history":[{"count":1,"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/pages\/1295\/revisions"}],"predecessor-version":[{"id":1296,"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/pages\/1295\/revisions\/1296"}],"wp:attachment":[{"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/media?parent=1295"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}