{"id":181,"date":"2023-05-11T18:28:28","date_gmt":"2023-05-11T09:28:28","guid":{"rendered":"http:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/?page_id=181"},"modified":"2025-06-27T10:15:41","modified_gmt":"2025-06-27T01:15:41","slug":"achievement","status":"publish","type":"page","link":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/achievement\/","title":{"rendered":"Publications"},"content":{"rendered":"\n

Publications (\uff5e2025, 5)<\/h2>\n\n\n\n
<\/div>\n\n\n\n

2025<\/strong><\/p>\n\n\n\n

 \u201cComplete crack elimination in strained SiGe\/Ge(111) heterostructures by pre-patterning of Si(111)\nsubstrates\u201d
M. Nagao, R. Mizoguchi, Y. Shibahara, K. Shikatake, M. Yamada, K. Hamaya and K. Sawano
Applied Physics Express 18, 055504 (2025).
DOI: \/10.35848\/1882-0786\/add83c<\/a><\/p>\n\n\n\n

 \u201cRoom-temperature spin transport through band-to-band tunneling at semiconductor p-n junctions\u201d
K. Oki, S. Ueda, T. Usami, S. Fujii, S. Kikuoka, K. Yamamoto, K. Sawano and K. Hamaya
Physical Review Applied 23, L051005-1- L051005-6 (2025).
DOI: \/10.1103\/PhysRevApplied.23.L051005<\/a><\/p>\n\n\n\n

 \u201cObservation of intravalley spin scattering in a doped multivalley semiconductor\u201d\n
K. Hamaya, T. Okada, K. Kawashima, T. Naito, K. Oki, S. Kikuoka, Y. Wagatsuma, M. Yamada and K. Sawano
Phys. Rev. B 111, L081301 (2025).
DOI: \/10.1103\/PhysRevB.111.L081301<\/a><\/p>\n\n\n\n

 \u201cDrastic enhancements of direct and indirect light emissions from Ge microbridge web-structures via efficient light confinements\u201d\n
Takahiro Inoue, Ayaka Odashima, Masaki Nagao, and Kentarou Sawano
Applied Physics Express 18, 012001 (2025).
DOI: \/10.35848\/1882-0786\/ada086<\/a><\/p>\n\n\n\n

<\/div>\n\n\n\n

2024<\/strong><\/p>\n\n\n\n

 \u201cCrystallographic Orientations of Cracks Formed in SiGe\/Ge\/Si(111)\u201d
Kota Tajima, Junji Yamanaka, Keisuke Arimoto, Kosuke O. Hara, Youya Wagatsuma and Kentarou Sawano
Microscopy and Microanalysis 30 (Suppl 1), 573\u2013575 (2024).
DOI: \/10.1093\/mam\/ozae044.267<\/a><\/p>\n\n\n\n

 \u201cEnhancement of room temperature electroluminescence from strained SiGe\/Ge(111) multiple quantum wells light emitting diodes\u201d
Shuya Kikuoka, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya, Kentarou Sawano
Materials Science in Semiconductor Processing 176, 108299 (2024).
DOI: \/10.1016\/j.mssp.2024.108299<\/a><\/p>\n\n\n\n

 \u201cFabrication of crack-free strained SiGe\/Ge multiple quantum wells on Ge-on-Si(111) by the patterning method\u201d
R. Kanesawa, S. Kikuoka, Y. Shibahara, Y. Wagatsuma, M. Yamada, K. Hamaya and K. Sawano
Materials Science in Semiconductor Processing 177, 108300 (2024).
DOI: \/10.1016\/j.mssp.2024.108300<\/a><\/p>\n\n\n\n

 \u201cGrowth of all-epitaxial Co2MnSi\/Ge\/Co2MnSi vertical spin-valve structures on Si\u201d
Atsuya Yamada, Michihiro Yamada, Shuhei Kusumoto, Julio A. do Nascimento, Connor Murrill, Shinya Yamada, Kentarou Sawano, Vlado K. Lazarov, Kohei Hamaya
Materials Science in Semiconductor Processing 173, 108140 (2024).
DOI: \/10.1016\/j.mssp.2024.108140<\/a><\/p>\n\n\n\n

 \u201cAl\u2013Ge-paste-induced liquid phase epitaxy of Si-rich SiGe(111) for epitaxial Co-based Heusleralloys\u201d
Michihiro Yamada, Shota Suzuki, Ai I. Osakae, Kazuaki Sumi, Takahiro Inoue, Azusa N. Hattori, Shinya Yamada, Kentarou Sawano, Marwan Dhamrin, Kohei Hamaya
Materials Science in Semiconductor Processing 174, 108232 (2024).
DOI: \/10.1016\/j.mssp.2024.108232<\/a><\/p>\n\n\n\n

 \u201cEffect of Sn doping on low-temperature growth of Ge epilayers on half-metallic Co2FeSi\u201d
Michihiro Yamada, Shuhei Kusumoto, Atsuya Yamada, Kentarou Sawano, Kohei Hamaya
Materials Science in Semiconductor Processing 171, 107987 (2024).
DOI: 10.1016\/j.mssp.2023.107987<\/a><\/p>\n\n\n\n

<\/div>\n\n\n\n

2023<\/strong><\/p>\n\n\n\n

 \u201cElectrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain\u201d
Keisuke Yamamoto, Takuro Matsuo, Michihiro Yamada, Youya Wagatsuma, Kentarou Sawano, Kohei Hamaya
Materials Science in Semiconductor Processing 167, 107763 (2023).
DOI: 10.1016\/j.mssp.2023.107763<\/a><\/p>\n\n\n\n

 \u201cTellurium nanosheets with structural anisotropy formed from defective MoTe2 multilayers\u201d
Shuto Muranaka, Satoshi Nogamida, Kosuke O. Hara, Kentarou Sawano and Yusuke Hoshi
AIP Advances 13, 075219 (2023).
DOI: 10.1063\/5.0155417<\/a><\/p>\n\n\n\n

 \u201cSignificant reduction of crack propagation in the strained SiGe\/Ge(111) induced by the local growth on the depth controlled area patterning\u201d
Youya Wagatsuma, Rena Kanesawa, Md. Mahfuz Alam, Kazuya Okada, Takahiro Inoue, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
Applied Physics Express 16, 015502 (2023)   
DOI: 10.35848\/1882-0786\/aca751<\/a><\/p>\n\n\n\n

 \u201cInfluences of lattice strain and SiGe buffer layer thickness on electrical characteristics of strained Si\/SiGe\/Si(110) heterostructures\u201d
Taisuke Fujisawa, Atsushi Onogawa, Miki Horiuchi, Yuichi Sano, Chihiro Sakata, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa and Keisuke Arimoto
Materials Science in Semiconductor Processing 161 (2023) 107476      
DOI:  10.1016\/j.mssp.2023.107476<\/a><\/p>\n\n\n\n

 \u201cDzyaloshinskii-Moriya interaction at epitaxial ferromagnet\/semiconductor interface\u201d
Shuto Kimura, Michihiro Yamada, Takumi Okuno, Kentarou Sawano, Kohei Hamaya and Kazuya Ando
Physical Review B 108, 094441 (2023).
DOI:  10.1103\/PhysRevB.108.094441<\/a><\/p>\n\n\n\n

<\/div>\n\n\n\n

2022<\/strong><\/p>\n\n\n\n

\u201cFabrication of SiGe\/Ge microbridges based on Ge-on-Si(110) and observation of resonant light emission\u201d
T. Inoue, Y. Wagatsuma, R. Ikegaya, K. Okada, K. Sawano
Journal of Crystal Growth 590, 126682 (2022).
DOI: 10.1016\/j.jcrysgro.2022.126682<\/a><\/p>\n\n\n\n

\u201cMechanism of crack formation in strained SiGe(111) layers\u201d
Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano
Journal of Crystal Growth 589, 126672 (2022).
DOI: 10.1016\/j.jcrysgro.2022.126672<\/a><\/p>\n\n\n\n

\u201cSignificant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor\u201d
T. Naito, R. Nishimura, M. Yamada, A. Masago, Y. Shiratsuchi , Y. Wagatsuma, K. Sawano, R. Nakatani, T. Oguchi, and K. Hamaya
Physical Review B 105, 195308 (2022)
DOI: 10.1103\/PhysRevB.105.195308<\/a><\/p>\n\n\n\n

\u201cStrong room-temperature EL emission from Ge-on-Si(111) diodes\u201d
Yuwa Sugiura, Masashi Sasaki, Youya Wagatsuma, Koudai Yamada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
Journal of Crystal Growth 594, 126766 (2022).
DOI: 10.1016\/j.jcrysgro.2022.126766<\/a><\/p>\n\n\n\n

\u201cTemperature Dependence of Two-Terminal Local Magnetoresistance in Co-Based Heusler Alloy\/Ge Lateral Spin-Valve Devices\u201d
Michihiro Yamada, Takahiro Naito, Kazuaki Sumi, Kentarou Sawano, and Kohei Hamaya
IEEE Transactions on Magnetics 58, 4100505 (2022).
DOI: 10.1109\/TMAG.2022.3145393<\/a><\/p>\n\n\n\n

\u201cStrain engineering of heteroepitaxial SiGe\/Ge on Si with various crystal orientations\u201d
Md. Mahfuz Alam, Youya Wagatsuma, Kazuya Okada, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano
ECS Transactions, 109 (4) 197-204 (2022)
DOI: 10.1149\/10904.0197ecst<\/a><\/p>\n\n\n\n

\u201cFabrication of Thick SiGe\uff0fGe Multiple Quantum Wells on Ge-on-Si and Their Optical Properties\u201d
Rena Kanesawa, Youya Wagatsuma, Syuya Kikuoka, Yuwa Sugiura, Kentarou Sawano
ECS Transactions, 109 (4) 289-295 (2022)
DOI: 10.1149\/10904.0289ecst<\/a><\/p>\n\n\n\n

\u201cFabrication of branch-like bridges based on Ge-on-Si (110) and observation of resonant light emission\u201d
Takahiro Inoue, Youya Wagatsuma, Reo Ikegaya, Ayaka Odashima, Masaki Nagao, Kentarou Sawano
ECS Transactions, 109 (4) 297-302 (2022)
DOI: 10.1149\/10904.0297ecst<\/a><\/p>\n\n\n\n

<\/div>\n\n\n\n

2021<\/strong><\/p>\n\n\n\n

\u201cA drastic increase in critical thickness for strained SiGe by growth on mesa-patterned Ge-on-Si\u201d
Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano
Applied Physics Express 14, 025502 (2021).\u3000\u3000\u3000
DOI: \/10.35848\/1882-0786\/abd4c5<\/a><\/p>\n\n\n\n

\u201cEnhanced electroluminescence from Ge-on-Si by precise in-situ doping and post-annealing\u201d
Kodai Yamada, Youya Wagatsuma, Kazuya Okada, Yusuke Hoshi, and Kentarou Sawano
Applied Physics Express 14, 045504 (2021).
DOI: \/10.35848\/1882-0786\/abf0df<\/a><\/p>\n\n\n\n

\u201cRoom-temperature two-terminal magnetoresistance ratio reaching 0.1% in semiconductor-based lateral devices with L21-ordered Co2MnSi\u201d
K. Kudo, M. Yamada, S. Honda, Y. Wagatsuma, S. Yamada, K. Sawano, and K. Hamaya
Appl. Phys. Lett. 118, 162404 (2021).
DOI: \/10.1063\/5.0045233<\/a><\/p>\n\n\n\n

“Effect of Fe atomic layers at the ferromagnet-semiconductor interface on temperature-dependent spin transport in semiconductors”
M. Yamada, Y. Shiratsuchi, H. Kambe, K. Kudo, S. Yamada, K. Sawano, R. Nakatani and K. Hamaya
J. Appl. Phys. 129, 183901 (2021)
DOI: \/10.1063\/5.0048321<\/a><\/p>\n\n\n\n

\u201cDependences of the hole mobility in the strained Si pMOSFET and gated Hall bars formed on SiGe\/Si(110) on the channel direction and the strained Si thickness\u201d
Keisuke Arimoto, Taisuke Fujisawa, Daichi Namiuchi, Atsushi Onogawa, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa
Journal of Crystal Growth 571, 126246 (2021).
DOI: \/10.1016\/j.jcrysgro.2021.126246<\/a><\/p>\n\n\n\n

\u201cMagnetoresistance ratio of more than 1% at room temperature in germanium vertical spin-valve devices with Co2FeSi\u201d
A. Yamada, M. Yamada, M. Honda, S. Yamada, K. Sawano, and K. Hamaya
Appl. Phys. Lett. 119, 192404 (2021).
DOI: \/10.1063\/5.0061504<\/a><\/p>\n\n","protected":false},"excerpt":{"rendered":"Publications (\uff5e2025, 5) 2025  \u201cComplete crack elimination in strained SiGe\/Ge(111) heterostructures by pr […]","protected":false},"author":2,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-181","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/pages\/181","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/comments?post=181"}],"version-history":[{"count":38,"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/pages\/181\/revisions"}],"predecessor-version":[{"id":1315,"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/pages\/181\/revisions\/1315"}],"wp:attachment":[{"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/media?parent=181"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}