{"id":412,"date":"2023-05-30T16:24:36","date_gmt":"2023-05-30T07:24:36","guid":{"rendered":"http:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/?page_id=412"},"modified":"2025-06-27T10:16:41","modified_gmt":"2025-06-27T01:16:41","slug":"international","status":"publish","type":"page","link":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/international\/","title":{"rendered":"International conference"},"content":{"rendered":"\n

International conference(\uff5e2025, 6)<\/h2>\n\n\n\n
<\/div>\n\n\n\n

2025<\/strong><\/p>\n\n\n\n

R. Yokoki, S. Sano, M. Aikawa, H. Imai, S. Kikuoka, K. Sawano
\u201cStrong room temperature electroluminescence from strained SiGe\/Ge p-i-n diodes on strained GOI
formed by layer transfer\u201d
E-MRS 2025 Spring Meeting, Strasbourg, France, May 26\u201330, 2025<\/p>\n\n\n\n

R. Mizoguchi, M. Nagao, Y. Shibahara, M. Aikawa, M. Yamada, K. Hamaya, K. Sawano
\u201cFormation of crack-free strained SiGe\/Ge by selective ion implantation\u201d
E-MRS 2025 Spring Meeting, Strasbourg, France, May 26\u201330, 2025<\/p>\n\n\n\n

S. Watahiki, A. Yamada, S. Obinata, S. Kikuoka, M. Yamada, S. Yamada, K. Sawano, K. Hamaya
“Observation of magnetoresistance effect in vertical Co2FeAl0.5Si0.5\/Ge\/Co2FeSi heterostructures”
E-MRS 2025 Spring Meeting, Strasbourg, France, May 26\u201330, 2025<\/p>\n\n\n\n

K. Oki, K. Yoshinari, S. Kikuoka, S. Yoshikawa, K. Yamamoto, T. Usami, A. N. Hattori, K. Sawano,
and K. Hamaya
“Ge-based lateral spin-valve devices fabricated on Ge on insulator”
E-MRS 2025 Spring Meeting, Strasbourg, France, May 26\u201330, 2025<\/p>\n\n\n\n

Ayaka Odashima, Ryoto Yanagisawa, Kentarou Sawano and Masahiro Nomura
\u201cEfficient reduction in thermal conductivity of Si thin-film by short period SiGe interfaces\u201d
The 41st International and 7th Asian Conference on Thermoelectrics (ICT\/ACT 2025), Sendai, Japan,
June 15-19, 2025<\/p>\n\n\n\n

2024<\/strong><\/p>\n\n\n\n

T. Inoue, A. Odashima, M. Nagao, T. Ito, O. Yoshikawa, K. Sawano
\u201cEnhancement of PL intensity from Ge microbridges via surface passivation by ALD\u201d
E-MRS 2024 Spring Meeting, Strasbourg, France, May 27\u201331, 2024<\/p>\n\n\n\n

Ayaka Odashima, Takahiro Inoue, Riku Ishikawa and Kentarou Sawano
\u201cFabrication of suspended Ge microbridges based on Ge-on-SOI and effects of metal film deposition\u201d
E-MRS 2024 Spring Meeting, Strasbourg, France, May 27\u201331, 2024<\/p>\n\n\n\n

Yuka Shibahara, Shuya Kikuoka, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya, Kentarou Sawano
\u201cStudy on crack formation in strained SiGe\/Ge-on-Si(111) via ultrasonic treatment\u201d
E-MRS 2024 Spring Meeting, Strasbourg, France, May 27\u201331, 2024<\/p>\n\n\n\n

Sota Koike, Ryoto Yanagisawa, Takahiro Inoue, Kentarou Sawano and Masahiro Nomura
\u201cReduction of Thermal Conductivity in Silicon Thin Film by Super-lattice Interface and Phononic Crystal Nanostructures\u201d
2024 International Conference on Solid State Devices and Materials (SSDM), Himeji, Japan, Sep. 1-\n4, 2024<\/p>\n\n\n\n

S. Ueda, K. Oki, S. Kikuoka, M. Yamada, S. Fujii, T. Usami, K. Sawano, and K. Hamaya:
“Observation of Spin Signals through Co2FeAl0.5Si0.5\/Ge-pn Junction at Room Temperature”,
ICMBE 2024, Oral, (Sept. 9 2024, Matsue).<\/p>\n\n\n\n

2023<\/strong><\/p>\n\n\n\n

Kentarou Sawano
\u201cStrain engineering of Si\/Ge heterostructures based on Ge virtual substrates\u201d Invited
E-MRS 2023 Spring Meeting, Strasbourg, France, May 29 – June 2, 2023<\/p>\n\n\n\n

Takahiro Inoue, Youya Wagatsuma, Reo Ikegaya, Ayaka Odashima, Masaki Nagao, Kentarou Sawano
\u201cFabrication of Si\/Ge microbridges based on Ge-on-Si (110) and effect of bridge length\u201d
The Joint ISTDM-ICSI 2023, Como, Italy, May 21-25, 2023 <\/p>\n\n\n\n

Shuya Kikuoka, Youya Wagatsuma, Yuwa Sugiura, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
\u201cDiode characteristics and room temperature EL emission of strained SiGe\/Ge quantum well LEDs\u201d
The Joint ISTDM-ICSI 2023, Como, Italy, May 21-25, 2023 <\/p>\n\n\n\n

R. Kanesawa, Y. Wagatsuma, S. Kikuoka, Y. Sugiura, M. Yamada, K. Hamaya and K. Sawano
\u201cFabrication of crack free strained SiGe\/Ge multiple quantum wells on Ge on Si(111) by the patterning method\u201d
The Joint ISTDM-ICSI 2023, Como, Italy, May 21-25, 2023\n<\/p>\n\n\n\n

Shuhei Kusumoto, Michihiro Yamada, Atsuya Yamada, Youya Wagatsuma, Kentarou Sawano and Kohei Hamaya
\u201cStructural and Magnetic Properties of CoFe\/Sn-Doped Ge\/Co2FeSi for Vertical Spin-Valve Devices on Si\u201d
2023 IEEE International Magnetic Conference (INTERMAG), Sendai, Japan, May 15-19, 2023<\/p>\n\n\n\n

K. Kawashima, T. Naito, M. Yamada, T. Okada, Y. Wagatsuma, K. Sawano and K. Hamaya
\u201cSignificant effect of carrier concentration on spin lifetime at low temperatures in strained Si0.1Ge0.9\u201d
2023 IEEE International Magnetic Conference (INTERMAG), Sendai, Japan, May 15-19, 2023<\/p>\n\n\n\n

<\/div>\n\n\n\n

2022<\/strong><\/p>\n\n\n\n

Md. Mahfuz Alam, Youya Wagatsuma, Kazuya Okada, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano
\u201cStrain engineering of heteroepitaxial SiGe\/Ge on Si with various crystal orientations\u201d Invited
The 242nd ECS Meeting, Atlanta, USA, Oct. 9-13, 2022<\/p>\n\n\n\n

T. Inoue, Y. Wagatsuma, L. Ikegaya, A. Odashima, M. Nagao and K. Sawano
\u201cEpitaxially grown of SiGe on Ge microbridge and observation of strong resonant light emission\u201d
The 242nd ECS Meeting, Atlanta, USA, Oct. 9-13, 2022<\/p>\n\n\n\n

Ayaka Odashima, Takahiro Inoue, Youya Wagatsuma, Reo Ikegaya, Masaki Nagao and Kentarou Sawano
\u201cFabrication of microbridges based on Ge-on-SOI and observation of strong resonant light emission\u201d
The 242nd ECS Meeting, Atlanta, USA, Oct. 9-13, 2022<\/p>\n\n\n\n

Reo Ikegaya, Takahiro Inoue, Takuya Komazawa, Youya Wagatsuma and Kentarou Sawano
\u201cFabrication of strained Ge microbridge structures with meshed pads and their optical properties\u201c
The 242nd ECS Meeting, Atlanta, USA, Oct. 9-13, 2022<\/p>\n\n\n\n

Shuya Kikuoka, Youya Wagatsuma, Yuwa Sugiura, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
\u201cStrong Room-temperature EL emissions from strained SiGe\/Ge-on-Si (111) LEDs\u201c
The 242nd ECS Meeting, Atlanta, USA, Oct. 9-13, 2022<\/p>\n\n\n\n

Rena Kanesawa, Youya Wagatsuma, Syuya Kikuoka, Yuwa Sugiura and Kentarou Sawano
\u201cFabrication of thick SiGe\uff0fGe multiple quantum wells on Ge-on-Si and their optical properties\u201d
The 242nd ECS Meeting, Atlanta, USA, Oct. 9-13, 2022<\/p>\n\n\n\n

Youya Wagatsuma, Rena Kanesawa, Md. Mahfuz Alam, Kazuya Okada, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
\u201cEvaluation of crack propagation in strained SiGe on Ge(111) patterned with various etching thickness\u201d
The 242nd ECS Meeting, Atlanta, USA, Oct. 9-13, 2022<\/p>\n\n\n\n

Ayaka Odashima, Takahiro Inoue, Youya Wagatsuma, Reo Ikegaya, Masaki Nagao and Kentarou Sawano
\u201cFabrication of microbridges based on Ge-on-SOI and observation of strong resonant light emission\u201d
The 22nd International Vacuum Congress IVC-22, Sapporo, Japan, Sep. 11-16, 2022<\/p>\n\n\n\n

Rena Kanesawa, Youya Wagatsuma, Syuya Kikuoka, Yuwa Sugiura, Kentarou Sawano
Light emissions from strained Si1-xGex\/Ge MQW formed on Ge-on-Si
The 22nd International Vacuum Congress IVC-22, Sapporo, Japan, Sep. 11-16, 2022<\/p>\n\n\n\n

Youya Wagatsuma, Rena Kanesawa, Md. Mahfuz Alam, Kazuya Okada, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano
Increased critical thickness of strained SiGe layers on Ge-on-Si(111)
The 22nd International Vacuum Congress IVC-22, Sapporo, Japan, Sep. 11-16, 2022<\/p>\n\n\n\n

T. Inoue, Y. Wagatsuma, R. Ikegaya, A. Odashima, M. Nagao, K. Sawano
\u201cPumping power dependence of light emissions from strained Ge microbridges\u201d
The 22nd International Vacuum Congress IVC-22, Sapporo, Japan, Sep. 11-16, 2022<\/p>\n\n\n\n

T. Inoue, Y. Wagatsuma, R. Ikegaya, A. Odashima, M. Nagao, K. Sawano
\u201cFabrication of SiGe\/Ge microbridges based on Ge-on-Si(110) and observation of resonant light emission\u201d
APAC Silicide 2022, July 30 – August 1, 2022, online<\/p>\n\n\n\n

Youya Wagatsuma, Rena Kanesawa, Md. Mahfuz Alam, Kazuya Okada, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano
\u201cCrack formations in SiGe\/Ge MQW layers on Ge-on-Si(111) substrates\u201d
APAC Silicide 2022, July 30 – August 1, 2022, online<\/p>\n\n\n\n

Takahiro Inoue, Youya Wagatsuma, Leo Ikegaya, Kentarou Sawano
\u201cFabrication of branch-like bridges based on Ge-on-Si(110) and observation of strong resonant light emission\u201d
The 2022 Spring Meeting of the European Materials Research Society (E-MRS), May 30 – June 3, 2022 online<\/p>\n\n\n\n

Youya Wagatsuma, Rena Kanesawa, Md. Mahfuz Alam, Kazuya Okada, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano
\u201cEffects of etching depth on crack generation in strained SiGe films on mesa-patterned Ge\u201d
The 2022 Spring Meeting of the European Materials Research Society (E-MRS), May 30 – June 3, 2022 online<\/p>\n\n\n\n

Piezoelectricity of the hBN\/1L-MoS2 heterostructure membrane
Calvin Chiba, Shota Sugawara, Emi Kitayoshi, Kenji Watanabe, Takashi Taniguchi, Kentarou Sawano,Hiroyuki Fujita and Yusuke Hoshi
2021 International Conference on Solid State Devices and Materials (SSDM), online, Sep. 27, 2022<\/p>\n\n\n\n

<\/div>\n\n\n\n

2021<\/strong><\/p>\n\n\n\n

Yuwa Sugiura, Masashi Sasaki, Youya Wagatsuma, Koudai Yamada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
\u201cStrong room-temperature EL emission from Ge-on-Si(111) diodes with ferromagnetic Schottky-tunnel electrodes\u201d
ISNTT2021, December 14-17, 2021 online.<\/p>\n\n\n\n

Takahiro Inoue, Youya Wagatsuma, Leo Ikegaya, Kazuya Okada and Kentarou Sawano
\u201cStrong resonant light emission in strained Ge microbridges\u201d
ISNTT2021, December 14-17, 2021 online.<\/p>\n\n\n\n

Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
\u201cObservation of photoluminous from SiGe\/Ge MQW on Ge-on-Si(111)\u201d
ISNTT2021, December 14-17, 2021 online.<\/p>\n\n\n\n

Yuwa Sugiura, Masashi Sasaki, Youya Wagatsuma, Koudai Yamada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
\u201cStrong room-temperature EL emission from Ge-on-Si(111) diodes\u201d
21st ICMBE 2021, September 6-9, 2021 online.<\/p>\n\n\n\n

Takahiro Inoue, Youya Wagatsuma, Leo Ikegaya, Kazuya Okada and Kentarou Sawano
\u201cEpitaxial growth of strained Si0.2Ge0.8 on Ge microbridge\u201d
21st ICMBE 2021, September 6-9, 2021 online.<\/p>\n\n\n\n

Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
\u201cSuppression of crack formation and propagation in strained SiGe by patterning Ge-on-Si substrates\u201d
21st ICMBE 2021, September 6-9, 2021 online.<\/p>\n\n\n\n

Yuwa Sugiura, Youya Wagatsuma, Koudai Yamada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
\u201cRoom temperature EL from strained Ge-on-Si(111) diode structures\u201d
EMRS 2021 Spring Meeting, May 31-June 4, 2021 online<\/p>\n\n\n\n

Takahiro Inoue, Youya Wagatsuma, Kodai Yamada and Kentarou Sawano
\u201cEffect of uniaxial strain direction on luminescence properties of strained Ge microbridge structures\u201d
EMRS 2021 Spring Meeting, May 31-June 4, 2021 online<\/p>\n\n\n\n

Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano \u201cSuppression of crack formation in strained SiGe layers by patterning of Ge-on-Si substrates\u201d
EMRS 2021 Spring Meeting, May 31-June 4, 2021 online<\/p>\n\n\n\n

Kairi Yamase, Shunya Hayashida, Kenji Watanabe, Takashi Taniguchi, Kentarou Sawano, Yusuke Hoshi
\u201cElectroluminescence from hBN-encapsulated bilayer MoTe2 by dual back-gate voltage modulation\u201d
Compound Semiconductor Week 2021, May 2021<\/p>\n\n\n\n

Satoshi Nogamida, Shunya Hayashida, Kousuke O Hara, Kentarou Sawano, Yusuke Hoshi
\u201cInvestigation of a defect-assisted-metal formed by annealing MoTe2 crystals with Ar ion implantation\u201d
The 2022 Spring Meeting of the European Materials Research Society, May 2021 online<\/p>\n\n\n\n

Yusuke Hoshi, Shunya Hayashida, Satoshi Nogamida, Kenji Watanabe, Takashi Taniguchi, Kentarou Sawano
\u201cInfluences of thermal treatment on crystal quality of semiconducting MoTe2 monolayers encapsulated by hexagonal boron nitrides\u201d
The 2022 Spring Meeting of the European Materials Research Society, May, 2021 online<\/p>\n\n\n\n

Yusuke Hoshi, Yuma Odagiri, Shunya Hayashida, Kenji Watanabe, Takashi Taniguchi, Kentarou Sawano
\u201cImprovement of Electrical Properties in hBN-encapsulated MoTe2 monolayers by Thermal Anneal\u201d
International Symposium on Novel maTerials and quantum Technologies, Dec. 2021<\/p>\n\n\n\n

<\/div>\n\n\n\n

2020<\/strong><\/p>\n\n\n\n

Kentarou Sawano, Youya Wagatsuma, Md. Mahfuz Alam, Kaisei Omata, Kenta Niikura, Shougo Shibata, Yusuke Hoshi, Michihiro Yamada and Kohei Hamaya
\u201cStrain engineering of Si\/Ge heterostructures on Ge-on-Si platform\u201d (invited)
PRiME 2020, October 4-9, 2020 online<\/p>\n\n\n\n

Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
\u201cIncreased critical thickness for strained SiGe on Ge-on-Si(111)\u201d
PRiME 2020, October 4-9, 2020 online<\/p>\n\n\n\n

Kodai Yamada, Yusuke Hoshi and Kentarou Sawano
\u201cStrong room-temperature electroluminescence from Ge-on-Si by precise in-situ doping control\u201d
PRiME 2020, October 4-9, 2020 online<\/p>\n\n\n\n

K. Arimoto, J. Yamanaka, K. O. Hara, K. Sawano, N. Usami and K. Nakagawa
\u201cEngineering Strain, Defects and Electronic Properties of (110)-Oriented Strained Si\u201d
PRiME 2020, October 4-9, 2020 online<\/p>\n\n\n\n

Hiroshi Nohira, Eriko Shigesawa and Kentarou Sawano
\u201cFormation and Evaluation of Al2O3 Layer by Direct ALD on Epitaxial SiGe\u201d
PRiME 2020, D01-1388, October 4-9, 2020 online<\/p>\n\n\n\n

S. Hayashida, R. Saito, K. Watanabe, T. Taniguchi, K. Sawano, Y. Hoshi
\u201cCrystal quality degradation in MoTe2 monolayers by a thermal annealing and its suppression by hexagonal boron nitride encapsulation\u201d
PRiME2020, B01-1132, (October 4-9 2020, Online)<\/p>\n\n\n\n

Miyake Takuma, Rikito Osako, Xuejun Xu, Kentarou Sawano, Takuya Maruizumi, Takehiko Tawara and Hideki Gotoh
Silicon Microdisk Resonators in the Mid-Infrared for On-Chip Gas Sensing
SSDM 2020, September 27-30, 2020 online<\/p>\n\n\n\n

<\/div>\n\n\n\n

2019<\/strong><\/p>\n\n\n\n

Shunya Hayashida, Kenji Watanabe, Takashi Taniguchi, Kentarou Sawano, and Yusuke Hoshi
“Effect of thermal annealing at a low temperature on exciton dynamics in semiconducting MoTe2 crystals”
SSDM2019, Nagoya University, Nagoya, Japan, September 2-5, 2019<\/p>\n\n\n\n

Yusuke Hoshi, Shunya Hayashida, Kentarou Sawano
“Optical Interferences in Monolayer Tungsten Disulfide and Tungsten Diselenide Encapsulated by Hexagonal Boron nitride”
ISCSI\u2167 (8th International Symposium on Control of Semiconductor Interfaces), Tohoku University, Sendai, Japan, November 27-30, 2019<\/p>\n\n\n\n

Kenta Niikura, Yuta Kumazawa, Natsuki Yamahata, Yusuke Hoshi, Tsukasa Takamura, Kimihiko Saito, Makoto Konagai, Kentarou Sawano
“Enhanced Photoluminescence from Strained Ge-on-Insulator Surface-Passivated with Hydrogenated Amorphous Si”
ISCSI\u2167 (8th International Symposium on Control of Semiconductor Interfaces), Tohoku University, Sendai, Japan, November 27-30, 2019<\/p>\n\n\n\n

Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya, Kentarou Sawano
“Surface Morphology Evolution of Strained Si1-xGex Grown on Relaxed Ge(111)”
ISCSI\u2167 (8th International Symposium on Control of Semiconductor Interfaces), Tohoku University, Sendai, Japan, November 27-30, 2019<\/p>\n\n\n\n

Shunya Hayashida, Kenji Watanabe, Takashi Taniguchi, Kentarou Sawano, and Yusuke Hoshi
“Thermal stability of mechanically-exfoliated monolayer and few layer MoTe2”
ISCSI\u2167 (8th International Symposium on Control of Semiconductor Interfaces), Tohoku University, Sendai, Japan, November 27-30, 2019<\/p>\n\n\n\n

Md. Mahfuz Alam and Kentarou Sawano (Invited)
\u201cSi\/Ge Heterostructures with Various Surface Orientations\u201d
EMN Epitaxy 2019, Amsterdam, the Netherlands, June 18-20, 2019<\/p>\n\n\n\n

Md. Mahfuz Alam, Kazuya Okada, Yuya Wagatsuma, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
\u201cStrain states and critical thickness of Si1-xGex epitaxial layers on Ge-on-Si(111)\u201d
ISTDM \/ ICSI 2019 Conference, Madison, USA, June 2-6, 2019<\/p>\n\n\n\n

<\/div>\n\n\n\n

2018<\/strong><\/p>\n\n\n\n

Kentarou Sawano, Xuejun Xu, Takuya Maruizumi
\u201cGermanium light source monolithically integrated on Si platform\u201d (Invited)
International Conference on Small Science 2018 (ICSS 2018), Rome, Italy, July 4, 2018<\/p>\n\n\n\n

Md. Mahfuz Alam, Keijiro Sato, Kosuke Sawada, Kentarou Sawano
\u201cStructural and electrical properties of compressive strained Ge channels fabricated on Si (111) and Si (100)\u201d
Joint ISTDM \/ ICSI 2018, Potsdam, Germany, May 27 – 31, 2018<\/p>\n\n\n\n

Ryotaro Matsuoka, Eriko Shigesawa, Satoru Miyamoto, Kentarou Sawano and K.M. Itoh
\u201cFabrication of Ge MOS with low interface trap density by ALD of Al2O3 on epitaxially grown Ge\u201d
Joint ISTDM \/ ICSI 2018, Potsdam, Germany, May 27 – 31, 2018<\/p>\n\n\n\n

Eriko Shigesawa, Masashi Fukumoto, Ryotaro Matsuoka, Ryosuke Sano, Kohei M. Itoh, Kentarou Sawano and Hiroshi Nohira
\u201cFormation of high quality Al2O3\/Ge interface by ALD directly on epitaxial Ge\u201d
Joint ISTDM \/ ICSI 2018, Potsdam, Germany, May 27 – 31, 2018<\/p>\n\n\n\n

K. Oki, K. Arimoto, J. Yamanaka, K. Nakagawa, K, Sawano
\u201cFabrication and evaluation of Ge on Si (110) by using two-step growth method\u201d
Joint ISTDM \/ ICSI 2018, Potsdam, Germany, May 27 – 31, 2018<\/p>\n\n\n\n

Yuta Kumazawa, Xuejun Xu, Kentarou Sawano, Takuya Maruizumi
\u201cEffects of post annealing on in-situ n-doped Ge-on-Si\u201d
Joint ISTDM \/ ICSI 2018, Potsdam, Germany, May 27 – 31, 2018<\/p>\n\n\n\n

R. Sano, S. Konoshima, K. Sawano, H. Nohira
\u201cEffect of Strain on the Binding Energy of Ge 2p and 3d core level\u201d
Joint ISTDM \/ ICSI 2018, Potsdam, Germany, May 27 – 31, 2018<\/p>\n\n\n\n

M. Tsukahara, M. Yamada, T. Naito, S. Yamada, K. Sawano, and K. Hamaya
\u201cRoom-temperature magnetoresistance effect in Ge lateral spin valve devices\u201d
Joint ISTDM \/ ICSI 2018, Potsdam, Germany, May 27 – 31, 2018<\/p>\n\n\n\n

Michihiro Yamada, Takahiro Naito, Makoto Tsukahara, Shinya, Yamada, Kentarou Sawano, and Kohei Hamaya
\u201cElectrical spin injection and transport in a SiGe alloy\u201d
Joint ISTDM \/ ICSI 2018, Potsdam, Germany, May 27 – 31, 2018<\/p>\n\n\n\n

Kentarou Sawano, Xuejun Xu, Takuya Maruizumi
\u201cCMOS-compatible Germanium Light Sources\u201d (Invited)
233rd ECS Meeting, Seattle, USA, May 13-17, 2018<\/p>\n\n\n\n

Kentarou Sawano
\u201cStrained Ge Optoelectronic Devices Integrated on a Si Platform\u201d (Invited)
Nanotech Malaysia 2018, Kuala Lumpur, Malaysia, May 7, 2018<\/p>\n\n\n\n

<\/div>\n\n\n\n

2017<\/strong><\/p>\n\n\n\n

Peiji Zhou, Xuejun Xu, Yuta Kanda, Sho Matsushita, Kentarou Sawano, and Takuya Maruizumi,
\u201cThe Resonant Phenomenon in the PL Spectra Measured in the Tensile-Strained Ge Microbridges\u201d,
2017 International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan, September 19-23, 2017<\/p>\n\n\n\n

Kentarou Sawano
\u201cControlled doping for Ge based optoelectronic devices\u201d invited
2017 EMN\/CC Meeting, Barcelona, Spain, Sep. 11-15 (2017)<\/p>\n\n\n\n

Shiori Konoshima, Eisuke Yonekura, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, and Kentarou Sawano
\u201cFormation of uniaxially strained Ge by local introduction of ion implantation defects\u201d
29th International Conference on Defects in Semiconductors (ICDS2017), Matsue, Japan, July 31 – Aug. 4 (2017)<\/p>\n\n\n\n

Ryotaro Matsuoka, Satoru Miyamoto, Kentarou Sawano, and Kohei M Itoh
\u201cLow-Defect-Density Al2O3 Insulating Layer for Gate-Controlled Si\/SiGe Quantum Dots\u201d
29th International Conference on Defects in Semiconductors (ICDS2017), Matsue, Japan, July 31 – Aug. 4 (2017)<\/p>\n\n\n\n

Kenji Oki, Madoka Kato, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, and Kentarou Sawano
\u201cEffects of ion implantation defects on strain relaxation of SiGe layers on Si (110)\u201d
29th International Conference on Defects in Semiconductors (ICDS2017), Matsue, Japan, July 31 – Aug. 4 (2017)<\/p>\n\n\n\n

Hideaki Hashimoto, Yuta Kumazawa, Xuejun Xu, Kentarou Sawano, and Takuya Maruizumi
\u201cCircular distributed Bragg reflector resonators on highly n-doped Ge-on-insulator\u201d
10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10), Coventry, UK, May14-19 (2017)<\/p>\n\n\n\n

Sho Matsushita, Yuta Kanda, Xu Xuejun, Kentarou Sawano, Takuya Maruizumi
\u201cResonant light emission from uniaxially tensile-strained Ge microbridges\u201d
10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10), Coventry, UK, May14-19 (2017)<\/p>\n\n\n\n

Xuejun Xu, Hideaki Hashimoto, Kentarou Sawano, and Takuya Maruizumi, \u201cResonant light emission from highly n-doped germanium-on-insulator microdisks with circular Bragg grating\u201d, 2017 Conference on Lasers and Electro-Optics (CLEO: 2017), San Jose, US, May 14-19, 2017<\/p>\n\n\n\n

M. Nomura, J. Nakagawa, K. Sawano, J. Maire, R. Anufriev, S. Volz
\u201cThermal Phonon MFP Spectrum Probing Using Phononic Crystals\u201d
2017 MRS Spring Meeting & Exhibit, NM2.4.24, Phoenix, USA, April (2017).<\/p>\n\n\n\n

Xuejun Xu, Hideaki Hashimoto, Keisuke Yoshida, Kentarou Sawano, and Takuya Maruizumi, \u201cHigh Q-factor resonant photoluminescence from Ge-on-Insulator microdisks\u201d, SPIE Photonics Europe 2016, Brussels, Belgium, April 4-7, 2016<\/p>\n\n\n\n

<\/div>\n\n\n\n

2016<\/strong><\/p>\n\n\n\n

Kentarou Sawano
\u201cAnisotropic strain engineering of Si\/Ge heterostructures\u201d Invited
2016 Global Research Efforts on Energy and Nanomaterials (GREEN 2016) Taipei, Taiwan, Dec. 24 (2016).<\/p>\n\n\n\n

Kentarou Sawano
\u201cStraining of Group IV Semiconductor Materials for Bandgap and Mobility Engineering\u201d Invited
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2016), Honolulu, USA, Oct. 2-7 (2016).<\/p>\n\n\n\n

Kentarou Sawano
\u201cAnisotropic Strain Introduction into Si\/Ge Hetero Structures\u201d Invited
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2016), Honolulu, USA, Oct. 2-7 (2016).<\/p>\n\n\n\n

H. Hashimoto, X. Xu, K. Sawano, T. Maruizumi
\u201cEnhanced Light Emission from N-Doped Ge Microdisks by Thermal Oxidation\u201d
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2016), Honolulu, USA, Oct. 2-7 (2016).<\/p>\n\n\n\n

K. Sawano, K. Mizutani, K. Watanabe, X. Xu, T. Maruizumi
\u201cLight Emission Enhancement from Ge Quantum Dots with Phosphorous \uf064-Doping\u201d
19th International Conference on Molecular Beam Epitaxy (MBE 2016), Montpellier (France) (Sep 4-9, 2016)<\/p>\n\n\n\n

M. Kato, T. Murakami, K. Arimoto, J. Yamanaka, K. Nakagawa, K, Sawano
\u201cFabrication of high-quality strain relaxed SiGe(110) films by controlling defects via ion implantation\u201d
19th International Conference on Molecular Beam Epitaxy (MBE 2016), Montpellier (France) (Sep 4-9, 2016)<\/p>\n\n\n\n

H. Hashimoto, X. Xu, K. Sawano, T. Maruizumi
\u201cHighly N-doped Ge Microdisks with Circular Bragg Gratings on Ge-on-Insulator\u201d
19th International Conference on Molecular Beam Epitaxy (MBE 2016), Montpellier (France) (Sep 4-9, 2016)<\/p>\n\n\n\n

Y.Arisawa, K. Sawano and N. Usami
\u201cStudy on ion implantation conditions in fabricating compressively strained Si\/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique\u201d
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan (Aug 7-12, 2016)<\/p>\n\n\n\n

K. Sawano, K. Watanabe, K. Mizutani, X. Xu, T. Maruizumi
\u201cInfluences of Phosphorous \u03b4-Doping at Ge Quantum Dots \/ Si Interface on Photoluminescence Properties and Dot Formation\u201d
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan (Aug 7-12, 2016)<\/p>\n\n\n\n

Shiori Konoshima, Eisuke Yonekura, Kentarou Sawano
\u201cFabrication of uniaxially strained Ge by selective ion implantation technique\u201d
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan (Aug 7-12, 2016)<\/p>\n\n\n\n

K. Arimoto, S. Yagi, J. Yamanaka, K. Nakagawa, N. Usami, K. Sawano
Hole Mobility in Strained Si\/SiGe\/Vicinal Si(110) Grown by Gas Source MBE
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan (Aug 7-12, 2016)<\/p>\n\n\n\n

Kentarou Sawano
\u201cStrained Ge-on-Insulator Substrates toward Optoelectronic Integrated Circuits\u201d (Invited)
The International Conference on Small Science (ICSS 2016), Prague, Czech Republic (June 25-29, 2016)<\/p>\n\n\n\n

Michihiro Yamada, Yuichi Fujita, Shinya Yamada, Kentarou Sawano, Kohei Hamaya
\u201cControl of Electrical Properties in Heusler-Alloy\/Ge Schottky Tunnel Contacts formed by Phosphorous \u03b4-Doping with Si-Layer Insertion\u201d
International SiGe Technology and Device Meeting 2016 (ISTDM2016), Nagoya, Japan (June 7-11, 2016)<\/p>\n\n\n\n

You Arisawa, Yusuke Hoshi, Kentarou Sawano, Junji Yamanaka, Keisuke Arimoto, Chiaya Yamamoto, Noritaka Usami
\u201cThermal Stability of Compressively Strained Si\/Relaxed Si1-xCx Heterostructures Formed on Ar Ion Implanted Si (100) Substrates\u201d
International SiGe Technology and Device Meeting 2016 (ISTDM2016), Nagoya, Japan (June 7-11, 2016)<\/p>\n\n\n\n

Yuuki Yajima, Yuta Ariyama, Kentarou Sawano
\u201cFormation of Strained Ge-on-Insulator (GOI) Substrates using SiGe Etching Stop Layers\u201d
International SiGe Technology and Device Meeting 2016 (ISTDM2016), Nagoya, Japan (June 7-11, 2016)<\/p>\n\n\n\n

Yuichi Fujita, Michihiro Yamada, Shinya Yamada, Kentarou Sawano, Takeshi Kanashima, Kohei Hamaya
\u201cRoom-Temperature Electrical Spin Injection and Detection in n-Ge through Co2FeSi0.5Al0.5\/n+-Ge Schottky Tunnel Contacts\u201d
International SiGe Technology and Device Meeting 2016 (ISTDM2016), Nagoya, Japan (June 7-11, 2016)<\/p>\n\n\n\n

<\/div>\n\n\n\n

2015<\/strong><\/p>\n\n\n\n

Yuichi Fujita, Takayasu Oka, Yuta Nagatomi, Keisuke Yamamoto, Michihiro Yamada, Kentarou Sawano, Shinya Yamada, Takeshi Kanashima, Hiroshi Nakashima, and Kohei Hamaya
\u201cLow-temperature fabrication of a gate stack structure for Ge-based spin-MOSFET\u201d
2015 International Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (2015 IWDTF), Tokyo, Japan (November 2-4, 2015)<\/p>\n\n\n\n

Kentarou Sawano
\u201cStrained Germanium based Nano-Structures toward High Performance Optoelectronic Integrated Circuits\u201d (Invited)
International Symposium for Advanced Materials Research 2015 (ISAMR 2015), Sun Moon Lake, Taiwan (August 16-20, 2015)<\/p>\n\n\n\n

K. Sawano, T. Nagashima, H. Hashimoto, X. Xu, K. Hamaya, and T. Maruizumi
\u201cFabrication of Strained Ge-on-Insulator for Ge-based Optoelectronic Devices\u201d
E-MRS 2015 Spring Meeting, Lille, France (May 11-15, 2015)<\/p>\n\n\n\n

Y. Hoshi, K. Arimoto, K. Sawano, Y. Arisawa, K. Fujiwara, J. Yamanaka, K. Nakagawa, N. Usami
\u201cCompressively strained Si\/Si1-xCx heterostructures formed by Ar ion implantation technique\u201c
9th International Conference on Silicon Epitaxy and Heterostructures, Montreal, Canada (May 2015)<\/p>\n\n\n\n

Michihiro Yamada, Kentarou Sawano, Masashi Uematsu, and Kohei. M. Itoh
\u201cSuppression of the segregation of delta-doped P by the insertion of Si layers in Ge\u201d
9th International Conference on Silicon Epitaxy and Heterostructures, Montreal, Canada (May 2015)<\/p>\n\n\n\n

Rai Moriya, Kentarou Sawano, Yusuke Hoshi, Satoru Masubuchi, Yasuhiro Shiraki, Takaaki Koga, and Tomoki Machida
\u201cCubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Ge\/SiGe Quantum Well\u201d
21st International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-21), July 26-31, 2015, Sendai, Japan<\/p>\n\n\n\n

Christian Neumann, Johannes Kierig, Florian Forster, Andreas Wild, J. W. Ager, E. E. Haller, Gerhard Abstreiter, Kentarou Sawano, Stefan Ludwig, and Dominique Bougeard
Robust quantum dot devices for qubits in isotopically purified 28Si
21st International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-21), July 26-31, 2015, Sendai, Japan<\/p>\n\n\n\n

<\/div>\n\n\n\n

2014<\/strong><\/p>\n\n\n\n

Kentarou Sawano
\u201cAnisotropic Strain Engineering in Si\/Ge Heterostructures\u201d (Invited)
The Collaborative Conference on Crystal Growth (3CG 2014), Phuket, Thailand (November 4-7, 2014)<\/p>\n\n\n\n

Michihiro Yamada, Kentarou Sawano and Kohei. M. Itoh
\u201cFormation of ultrashallow Ohmic contacts for n-type Ge by P delta-doping\u201d
7th International Silicon-Germanium Technology and Device Meeting, 2014 ISTDM, Singapore, (June 2-4, 2014) .<\/p>\n\n\n\n

Eisuke Yonekura, Junji Yamanaka, Keisuke Arimoto, Kiyokazu Nakagawa, Yasuhiro Shiraki and Kentarou Sawano
\u201cFormation of Uniaxially Strained SiGe with High Ge Concentrations by Selective Ion Implantation\u201d
7th International Silicon-Germanium Technology and Device Meeting, 2014 ISTDM, Singapore, (June 2-4, 2014) .<\/p>\n\n\n\n

Tomonori Nagashima, Hironori Katsumata, Kohei Hamaya, Masanobu Miyao, Yasuhiro Shiraki, Kentarou Sawano
\u201cElectrical properties of strained Ge(111)-on-Insulator (GOI) fabricated by Ge epitaxy on Si and layer transfer\u201d
7th International Silicon-Germanium Technology and Device Meeting, 2014 ISTDM, Singapore, (June 2-4, 2014) .<\/p>\n\n\n\n

Kentarou Sawano, Tatsuya Nakama, Xuejun Xu, Yasuhiro Shiraki, Takuya Maruizumi
\u201cEnhancement of Photoluminescence from Si\/Ge Quantum Dots by Phosphorus \uf064-doping\u201d
18th International Conference on Molecular Beam Epitaxy, Flagstaff, USA (September 7-12, 2014)<\/p>\n\n\n\n

Michihiro Yamada, Kentarou Sawano and Kohei. M. Itoh
\u201cSuppression of segregation in P delta doping for ultrashallow Ohmic contact on n-type Ge\u201d
18th International Conference on Molecular Beam Epitaxy, Flagstaff, USA (September 7-12, 2014)<\/p>\n\n\n\n

<\/div>\n\n\n\n

2013<\/strong><\/p>\n\n\n\n

K. Sawano
\u201cStrain engineered Si\/Ge heterostructures\u201d (Invited)
The International Conference on Small Science (ICSS 2013), Workshop on Nano\/Micro Structure, Las Vegas, USA, December 15-18, 2013<\/p>\n\n\n\n

K. Sawano, Y. Shoji, N. Funabashi, E. Yonekura, K. Nakagawa, Y. Shiraki
\u201cUniaxially strained Si\/Ge heterostructures grown on selectively ion-implanted substrates\u201d
17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), Warsaw, Poland, August 11-16, 2013<\/p>\n\n\n\n

K. Sawano, Y. Hoshi, S. Endo, H. Katsumata, T. Nagashima, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Hamaya, M. Miyao and Y. Shiraki
\u201cFormation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer\u201d
The 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan, June 2-7, 2013<\/p>\n\n\n\n

Keisuke Nishida, Xuejun Xu, Kentarou Sawano, Takuya Maruizumi, Yasuhiro Shiraki
\u201cHighly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy\u201d
The 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan, June 2-7, 2013<\/p>\n\n\n\n

K. Sawano, Y. Shoji, E. Yonekura, K. Nakagawa, and Y. Shiraki
\u201cFormation of Uniaxially Strained Ge by Selective Ion Implantation\u201d
E-MRS 2013 Spring Meeting, Symposium I: Strasbourg, France, May 30, 2013<\/p>\n\n\n\n

Shinya Yamada, Makoto Kawano, Kohei Tanikawa, Kentarou Sawano, Masanobu Miyao, Kohei Hamaya
\u201cEpitaxial Ge\/Metallic Silicide Grown on Si with Atomically Smooth Heterointerfaces\u201d
The 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan, June 2-7, 2013<\/p>\n\n\n\n

<\/div>\n\n\n\n

2012<\/strong><\/p>\n\n\n\n

K. Sawano, Y. Hoshi, S. Nagakura, K. Arimoto, K. Nakagawa, N. Usami, Y. Shiraki
\u201cOn the origin of the uniaxial strain induced in Si\/Ge heterostructures with selective ion implantation technique\u201d
The 17th International Conference on Molecular Beam Epitaxy, Nara, Japan, September 26, 2012<\/p>\n\n\n\n

Y. Hoshi, S. Kubo, K. Sawano, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Hamaya, M. Miyao and Y. Shiraki
\u201cFormation of high-quality Ge(111) layers on Si (111) substrates\u201d
The 17th International Conference on Molecular Beam Epitaxy, Nara, Japan, September 27, 2012<\/p>\n\n\n\n

K. Sawano, Y. Hoshi, S. Nagakura, K. Arimoto, K. Nakagawa, N. Usami, and Y. Shiraki
\u201cFormation of Uniaxially Strained Si\/Ge Channels on SiGe Buffers Strain-controlled with Selective Ion Implantation\u201d
Pacific Rim Meeting (PRiME) 2012, Symposium:E17 – SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 5, Honolulu, USA, October 10, 2012<\/p>\n\n\n\n

Y. Hoshi, R. Moriya, K. Sawano, N. Usami, T. Machida and Y. Shiraki
\u201cMagnetotransport properties of 20-nm-thick strained Ge with various compressive stresses\u201d
2012 International Conference on Solid State Devices and Materials (SSDM 2012), Kyoto, Japan, September 25-27, 2012<\/p>\n\n\n\n

<\/div>\n\n\n\n

2011<\/strong><\/p>\n\n\n\n

Kentarou Sawano
\u201cIon Implantation for Strain Engineering of Si-based Semiconductor\u201d invited
BIT\u2019s 1st Annual World Congress of Nano-S&T 2011, Dalian, China, October 26, 2011<\/p>\n\n\n\n

Yusuke Hoshi, Kentarou Sawano, Kohei Hamaya, Masanobu Miyao, and Yasuhiro Shiraki
“Fabrication of strained thin-film GOI based on wafer bonding”
ICSi-7 2011 (International Conference on Si Epitaxy and Heterostructures), Leuven, Belgium, Aug. 30, 2011<\/p>\n\n\n\n

Shigenori Inoue, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa Kentarou Sawano, Yasuhiro Shiraki, Atsushi Moriya, Yasuhiro Inokuchi, and Yasuo Kunii
“Microstructure Change of Si0.99C0.01 Thin Films Caused by Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation and Successive Rapid Thermal Annealing Treatment”
ICSi-7 2011 (International Conference on Si Epitaxy and Heterostructures), Leuven, Belgium, Aug. 30, 2011<\/p>\n\n\n\n

Takuya Maruizumi, Jiro Ushio, Shotaro Abe, Kentarou Sawano, and Yasuhiro Shiraki
“Surface segregation behavior of B, Ga, Sb, and As dopant atoms on Ge(100) and Ge(111) examined with a first-principles method”
ICSi-7 2011 (International Conference on Si Epitaxy and Heterostructures), Leuven, Belgium, Aug. 30, 2011<\/p>\n\n\n\n

E. S. Kannan, I. Bisotto, R. Murali, T. J. Beck, L. Jalabert, K. Sawano, H. Fujita, and J.-C. Portal
“Electron-antidot interaction in antidot lattice with different etching parameter”
The 19th international conference on Electronic Properties of Two-Dimensional Systems (EP2DS19), Florida, USA, July 25, 2011<\/p>\n\n\n\n

I. Bisotto, E. S. Kannan, R. Murali, T. J. Beck, L. Jalabert, K. Sawano, H. Fujita, and J.-C. Portal
“Ratchet photovoltage in Si\/SiGe heterostructure for different antidot lattice parameters”
The 19th international conference on Electronic Properties of Two-Dimensional Systems (EP2DS19), Florida, USA, July 25, 2011<\/p>\n\n\n\n

T. Tanaka, K. Sawano , Y. Hoshi, Y. Shiraki, and K. M. Itoh
“Temperature dependence of two-dimensional hole gas mobility in a strained Ge quantum well”
The 19th international conference on Electronic Properties of Two-Dimensional Systems (EP2DS19), Florida, USA, July 25, 2011<\/p>\n\n\n\n

Y. Hoshi, K. Sawano, N. Usami, K. Arimoto, K. Nakagawa, and Y. Shiraki
\u201cStripe line width dependence of anisotorpic strain states induced into SiGe films by selective ion implantation technique\u201c
European Materials Research Society (E-MRS) 2011 Spring Meeting, Symposium I, France, 9 May, 2011<\/p>\n\n\n\n

<\/div>\n\n\n\n

2010<\/strong><\/p>\n\n\n\n

K. Sawano, Y. Hoshi, K. Kasahara, K. Yamane, K. Hamaya, M. Miyao, and Y. Shiraki
\u201cFormation of ultra-shallow Ohmic contacts on n-Ge by Sb \u03b4-doping\u201d
MRS 2010 Fall Meeting, Symposium AA: Group IV Semiconductor Nanostructures and Applications, Boston, USA, Dec. 2, 2010<\/p>\n\n\n\n

Y. Hoshi, K. Sawano, A. Yamada, N. Usami, K. Arimoto, K. Nakagawa, and Y. Shiraki
\u201cEffect of line width on uniaxial strain states of SiGe layers fabricated by selective ion implantation\u201d
5th International SiGe Technology and Device Meeting (ISTDM) 2010, Stockholm, Sweden, May 24, 2010<\/p>\n\n\n\n

K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, N. Usami, K. Arimoto, K. Nakagawa, and Y. Shiraki
\u201cEffects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels\u201d
E-MRS 2010 Spring Meeting, Symposium H : Post-Si CMOS electronic devices: the role of Ge and III-V materials Strasbourg, France, June 10, 2010<\/p>\n\n\n\n

K. Kasahara, Y. Ando, K.Yamane, Y. Enomoto, K. Sawano, K. Hamaya and M. Miyao,
“Fe3Si\/Ge(111) Schottky contacts for spin injection into a Ge channel”,
11th Joint MMM-Intermag Conference (2010\/1\/20). Washington DC, USA<\/p>\n\n\n\n

Y. Ando, K. Kasahara, Y. Enomoto, K.Yamane, K. Hamaya, K. Sawano, T. Kimura and M. Miyao,
“Nonlocal voltage detection of spin transport in silicon using Fe3Si\/Si Schottky tunnel contacts “,
11th Joint MMM-Intermag Conference (2010\/1\/19). Washington DC, USA<\/p>\n\n\n\n

<\/div>\n\n\n\n

2009<\/strong><\/p>\n\n\n\n

Y. Ando, K. Kasahara, Y. Enomoto, K. Yamane, K. Hamaya, K. Sawano, T. Kimura, and M. Miyao,
“Nonlocal voltage detection of spin transport in silicon using Fe3Si\/Si Schottky tunnel contacts”,
International IMR Workshop on Group IV Spintronics (2009\/10\/4).<\/p>\n\n\n\n

\u201cRoom-temperature observation of quantum size effects in photoluminescence of Si\/Si0.8Ge0.2 nanocolumns prepared by neutral beam etching\u201d
R. Hirano, S. Miyamoto, M. Yonemoto, S. Samukawa, K. Sawano, Y. Shiraki, and K. M. Itoh
International Symposium on Quantum Nanophotonics and Nanoelectronics 2009, Tokyo, Japan, November 18-20, 2009<\/p>\n\n\n\n

Kentarou Sawano, Yusuke Hoshi, Atsunori Yamada, Yoshiyasu Hiraoka, Noritaka Usami, Keisuke Arimoto, Kiyokazu Nakagawa, and Yasuhiro Shiraki
\u201cFormation of Uniaxially Strained SiGe by Selective Ion Implantation Technique\u201d
E-MRS 2009 Spring Meeting, Symposium I : Silicon and Germanium issues for future CMOS devices, Strasbourg, France, June 8-12. 2009<\/p>\n\n\n\n

Kentarou Sawano
\u201cCMP for high mobility strained Si\/Ge Channels\u201d Invited
2009 MRS (Materials Research Society) Spring Meeting, Symposium E : Science and Technology of Chemical Mechanical Planarization (CMP), San Francisco, USA, April 16, 2009<\/p>\n\n\n\n

\u201cProbing the Behaviors of Point Defects in Silicon and Germanium Using Isotope Superlattices\u201d
Masashi Uematsu, Miki Naganawa, Yasuo Shimizu, Kohei M. Itoh, Kentarou Sawano, Yasuhiro Shiraki, and Eugene E. Haller
The 216th Meeting of the Electrochemical Society, Analytical Techniques for Semiconductor Materials and Process Characterization 6, Wien, Austria, October 4-9 (2009)<\/p>\n\n\n\n

\u201cDeactivation Mechanism of Ion-Implanted Arsenic in Germanium\u201d
Masashi Uematsu, Miki Naganawa, Yasuo Shimizu, Kohei M. Itoh, Kentarou Sawano, Yasuhiro Shiraki, and Eugene E. Haller
The 25th International Conference on Defects in Semiconductors (ICDS-25). St Petersburg, Russia, July 20-24 (2009)<\/p>\n\n\n\n

\u201cIdentification of scattering mechanisms limiting the mobility of two-dimensional electron gas in Si\/SiGe heterostructures\u201d
G. Tsuchiya, K. Sawano, Y. Shiraki, K. M. Itoh
The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18), Kobe, July 19-24 (2009)<\/p>\n\n\n\n

\u201cLandau level crossing and pseudospin phase transitions in Si quantum wells\u201d
Kohei Sasaki, Ryuichi Masutomi, Kiyohiko Toyama, Kentarou Sawano, Yasuhiro Shiraki and Tohru Okamoto
The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18), Kobe, July 19-24 (2009)<\/p>\n\n\n\n

\u201cCyclotron resonance of two-dimensional electrons in a Si quantum well\u201d
R. Masutomi, A. Sekine, K. Sasaki, K. Sawano, Y. Shiraki and T. Okamoto
The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18), Kobe, July 19-24 (2009)<\/p>\n\n\n\n

\u201cAbsence of Transient Enhanced Diffusion in Ion-Implanted Ge Investigated by Isotope Superlattices\u201d
Masashi Uematsu, Miki Naganawa, Yasuo Shimizu, Kohei M. Itoh, Kentarou Sawano, Yasuhiro Shiraki, and Eugene E. Haller
E-MRS 2009 Spring Meeting, Symposium I : Silicon and Germanium issues for future CMOS devices, Strasbourg, France, June 8-12. 2009<\/p>\n\n\n\n

\u201cIon dose and species dependence of strain relaxation of SiGe buffer layers formed by ion-implantation technique\u201d
Y.Hoshi, K.Sawano, Y.Hiraoka, A.Yamada, K.Arimoto, N.Usami,K.Nakagawa, Y.Shiraki
6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, California, USA, May 17-22 (2009)<\/p>\n\n\n\n

<\/div>\n\n\n\n

2008<\/strong><\/p>\n\n\n\n

\u201cLocal Control of Strain in SiGe by Ion Implantation Technique\u201d
K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami, K. Nakagawa, Y. Shiraki
4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4), Sendai, May 21-24, 2008<\/p>\n\n\n\n

\u201cCrystalline morphology of step-graded SiGe layers grown on exact and vicinal (110) Si substrates\u201d
K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami, and K. Nakajima
4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4), Sendai, May 21-24, 2008<\/p>\n\n\n\n

\u201cFabrication of thin strain-relaxed SiGe buffer layers with high-Ge composition by ion implantation method\u201d
Y. Hoshi, K. Sawano, Y. Hiraoka, N. Usami, K. Nakagawa, and Y. Shiraki
4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4), Sendai, May 21-24, 2008<\/p>\n\n\n\n

\u201cStrain relaxation mechanism in step-graded SiGe\/Si(110) structure grown at 650 \u2013 800 \u00b0C\u201d
M. Watanabe, K. Arimoto, J. Yamanaka, K. Nakagawa, N. Usami, K. Nakajima, K. Sawano, and Y. Shiraki
4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4), Sendai, May 21-24, 2008<\/p>\n\n\n\n

\u201cStructural and transport properties of strained Ge and SiGe grown on patterned substrates\u201d
G. Kawaguchi, K. Shimizu, K. Arimoto, M. Watanabe, K. Nakagawa, J. Yamanaka, N. Usami, K. Nakajima, K. Sawano, and Y. Shiraki
4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4), Sendai, May 21-24, 2008<\/p>\n\n\n\n

\u201cLocal Strain Control of SiGe by Selective Ion Implantation Technique\u201d
K. Sawano, Y. Hoshi, Y. Hiraoka, S. Kannan, Y. Shiraki, N. Usami, and K. Nakagawa
4th International SiGe Technology and Device Meeting (ISTDM) 2008, Taiwan, May 11-14, 2008<\/p>\n\n\n\n

\u201cDevelopment of Thin SiGe Virtual Substrate with High Ge Composition by Ion Implantation Method\u201d
Yusuke Hoshi, Kentarou Sawano, Yoshiyasu Hiraoka, Yuu Satoh, Atsunori Yamada, Yuta Ogawa, Yasuhiro Shiraki, Noritaka Usami, and Kiyokazu Nakagawa
4th International SiGe Technology and Device Meeting (ISTDM) 2008, Taiwan, May 11-14, 2008<\/p>\n\n\n\n

\u201cObservation of Pronounced Effect of Compressive Strain on Room-Temperature Transport Properties of 2DHG Confined in Ge Quantum Wells\u201d
Maksym Myronov, K. Sawano, Y. Shiraki, and K.M. Itoh
4th International SiGe Technology and Device Meeting (ISTDM) 2008, Taiwan, May 11-14, 2008<\/p>\n\n\n\n

\u201cStrain Relaxation Mechanisms in Compositionally Uniform and Step-Graded SiGe Films Grown on Si(110) Substrates\u201d
Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Noritaka Usami, and Kazuo Nakajima
4th International SiGe Technology and Device Meeting (ISTDM) 2008, Taiwan, May 11-14, 2008<\/p>\n\n\n\n

\u201cSelective and Rapid Heating Method for Polycrystallization of Amorphous Si Using Microwave Plasma Irradiation\u201d
S. Ashizawa, S. Ariizumi, M. Mitsui, K. Arimoto, J. Yamanaka, K. Nakagawa, T. Arai, T. Takamatsu, K. Sawano, and Y. Shiraki
4th International SiGe Technology and Device Meeting (ISTDM) 2008, Taiwan, May 11-14, 2008<\/p>\n\n\n\n

<\/div>\n\n\n\n

2007<\/strong><\/p>\n\n\n\n

\u201cFabrication of SiGe Virtual Substrates by Ion Implantation Technique\u201d
K. Sawano, Y. Shiraki, and K. Nakagawa
212th ECS Meeting, Washington, D.C., October 7-12. 2007<\/p>\n\n\n\n

\u201cHole density and strain dependencies of hole effective mass in compressively strained Ge channel structures\u201d
K. Sawano, Y. Kunishi, K. Toyama, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki
The 13th International Conference on Modulated Semiconductor structures (MSS-13), Genova, Italy, July 15-20, 2007<\/p>\n\n\n\n

\u201cObservation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature\u201d
M. Myronov, K. Sawano, K. M. Itoh and Y. Shiraki
The 13th International Conference on Modulated Semiconductor structures (MSS-13), Genova, Italy, July 15-20, 2007<\/p>\n\n\n\n

\u201cStrained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique\u201d
K. Sawano, A. Fukumoto, Y. Hoshi, J. Yamanaka, K. Arimoto, K. Nakagawa and Y. Shiraki
5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5), Marseille, France, May 20-25, 2007<\/p>\n\n\n\n

\u201cFabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions\u201d
K. Sawano, A. Fukumoto, Y. Hoshi, J. Yamanaka, K. Nakagawa, and Y. Shiraki
5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5), Marseille, France, May 20-25, 2007<\/p>\n\n\n\n

\u201cInvestigations of strain states and improvements of thermal stability in strained-Si-on-Insulator (sSOI) structures\u201d
Y. Hoshi, A. Fukumoto, K. Sawano, I. Cayrefourcq, M. Yoshimi and Y. Shiraki
5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5), Marseille, France, May 20-25, 2007<\/p>\n\n\n\n

\u201cMicrostructure difference of Ni induced poly-crystallized SiGe by changing annealing atmosphere, and enhancement of Ni induced poly-crystallization of Si by Ar ion-implantation\u201d
J. Yamanaka, T. Horie, M. Mitsui, K. Arimoto, K. Nakagawa, T. Sato, K. Sawano, Y. Shiraki, T. Moritani and M. Doi
5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5), Marseille, France, May 20-25, 2007<\/p>\n\n\n\n

\u201cGrowth temperature dependence of the defect morphology in SiGe films grown on Si(110) substrates with step-graded buffer being employed\u201d
Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Noritaka Usami and Kazuo Nakajima
5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5), Marseille, France, May 20-25, 2007<\/p>\n\n\n\n

\u201cCharacterizations of Polycrystalline SiGe Films on SiO2 Grown by Gas-Source Molecular Beam Deposition\u201d
M. Mitsui, M. Tamoto, K. Arimoto, J. Yamanaka, K. Nakagawa, T. Sato, N. Usami, K. Sawano and Y. Shiraki
5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5), Marseille, France, May 20-25, 2007<\/p>\n\n\n\n

<\/div>\n\n\n\n

2006<\/strong><\/p>\n\n\n\n

\u201cFabrication of Ge channels with extremely high compressive strain and their magnetotransport properties\u201d
K. Sawano, K. Toyama, T. Okamoto, N. Usami, K. Nakagawa, and Y. Shiraki
The 14th International Conference on Molecular Beam Epitaxy (MBE2006), Tokyo, Japan, September 3-8, 2006<\/p>\n\n\n\n

\u201cGrowth temperature dependence of the lattice structures of SiGe films grown on Si(110) substrates by gas source MBE\u201d
Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, and Noritaka Usami
The 14th International Conference on Molecular Beam Epitaxy (MBE2006), Tokyo, Japan, September 3-8, 2006<\/p>\n\n\n\n

\u201cThe carrier density dependence of hole mobility in strained Ge channel modulation-doped structures\u201d\u3000
K. Sawano, Y. Kunishi, H. Satoh K. Nakagawa and Y. Shiraki
28th International conference on the Physics of Semiconductors (ICPS-28), Vienna, Austria, July 24-28 2006<\/p>\n\n\n\n

\u201cStrain and hole-density dependence of hole mobility in strained-Ge modulation-doped structures\u201d
K. Sawano, H. Satoh, Y. Kunishi, K. Nakagawa, and Y. Shiraki
3rd International SiGe Technology and Device Meeting (ISTDM) 2006, Princeton, May 2006<\/p>\n\n\n\n

\u201cInvestigations of Thermal Stability of strained-SOI (sSOI)\u201d
A. Fukumoto, K. Sawano,Y. Hoshi, M. Yoshimi and Y. Shiraki,
3rd International SiGe Technology and Device Meeting (ISTDM) 2006, Princeton, May 2006<\/p>\n\n\n\n

\u201cEnhancement of Hole Mobility and Carrier Density in Ge Quantum Well SiGe Heterostructure via Implementation of Double-Sides Doping\u201d
M. Myronov, K. Sawano and Y. Shiraki
3rd International SiGe Technology and Device Meeting (ISTDM) 2006, Princeton, May 2006<\/p>\n\n\n\n

\u201cThe hole density dependence of hole mobility in compressively strained Ge channel modulation-doped structures\u201d
K. Sawano, Y. Kunishi, H. Satoh, K. Nakagawa and Y. Shiraki
2nd International WorkShop on New Group \u2163 Semiconductor Nanoelectronics, Sendai, Japan, October 2006<\/p>\n\n\n\n

<\/div>\n\n\n\n

2005<\/strong><\/p>\n\n\n\n

\u201cMobility enhancement in strained-Ge modulation-doped structures by planarization of SiGe buffer layers\u201d
K. Sawano, Y. Abe, H. Satoh, K. Nakagawa, and Y. Shiraki
12th International Conference on Modulated Semiconductor Structures (MSS12), Albuquerque, July 2005<\/p>\n\n\n\n

\u201cStrain field distribution in strained-Si \/ SiGe virtual substrates and its influence on roughness formation\u201d
K. Sawano, N. Usami, K. Nakagawa, and Y. Shiraki
First International WorkShop on New Group \u2163 Semiconductor Nanoelectronics, Sendai, Japan, May 2005<\/p>\n\n\n\n

\u201cStrain field and related roughness formation in SiGe relaxed buffer layers\u201d
K. Sawano, N. Usami, K. Nakagawa, and Y. Shiraki
Forth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji, May 2005<\/p>\n\n\n\n

\u201cStrain Relaxation Mechanism of a SiGe Thin Film Grown on an Ion-Implanted Si substrate\u201d
Junji Yamanaka, Kentarou Sawano, Kumiko Suzuk, Kiyokazu Nakagawa, Yusuke Ozawa, Takeo Hattori, and Yasuhiro Shiraki
Forth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji, May 2005<\/p>\n\n\n\n

\u201cDetermination of Lattice Parameters of Strained-Si\/SiGe Heterostructures Grown on Si(110) Substrates\u201d
Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Shinji Koh, and Noritaka Usami
Forth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji, May 2005<\/p>\n\n\n\n

\u201cTransport Properties of SPC-Poly SiGe Crystallized at 700\u00b0C and GSMBE-Poly SiGe Grown at 600\u00b0C\u201d
M. Mitsui, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano, N. Usami, Y. Shiraki
Forth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji, May 2005<\/p>\n\n\n\n

\u201cStrain field fluctuation in SiGe buffer layers and its reduction by ion implantation technique\u201d
K. Sawano, N. Usami, K. Nakagawa, and Y. Shiraki
Seventh International Conference on New Phenomena in Mesoscopic Structures, Hawaii, USA, November 2005<\/p>\n\n\n\n

<\/div>\n\n\n\n

2004<\/strong><\/p>\n\n\n\n

\u201cHigh-Quality Thin SiGe Virtual Substrates Formed on Ion-Implanted Si Substrates\u201d
K. Sawano, J. Yamanaka, Y. Ozawa, K. Suzuki, S. Koh, K. Nakagawa, T. Hattori, and Y. Shiraki
Second International SiGe Technology and Device Meeting (ISTDM) 2004, Frankfurt, May 2004<\/p>\n\n\n\n

\u201cObservation of Strain Field Fluctuation in SiGe Relaxed Buffer Layers and its Influence on Overgrown Structures\u201d
K. Sawano, N. Usami, K. Arimoto, S. Koh, K. Nakagawa, and Y. Shiraki
Second International SiGe Technology and Device Meeting (ISTDM) 2004, Frankfurt, May 2004<\/p>\n\n\n\n

\u201cChanges in Elastic Deformation of Strained Si by Micro-Fabrication\u201d
Keisuke Arimoto, Daisuke Furukawa, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Shinji Koh, Yasuhiro Shiraki, and Noritaka Usami
Second International SiGe Technology and Device Meeting (ISTDM) 2004, Frankfurt, Germany, May (2004)<\/p>\n\n\n\n

\u201cObservation of Dislocations in Strain-Relaxed Silicon-Germanium Thin Films with Flat Surfaces Grown on Ion-Implanted Silicon Substrates\u201d
J. Yamanaka, K. Sawano, K. Nakagawa, K. Suzuki, Y. Ozawa, S. Koh, T. Hattori, and Y. Shiraki\u3001
European Material Research Society (E-MRS) Meeting, Strasbourg, France, May 2004<\/p>\n\n\n\n

\u201cGrowth of Functional Structures on SiGe-on-Insulator Substrates with High Ge Content\u201d
S. Koh, K. Sawano, Y. Shiraki, X. Huang, S. Uda
14th International Conference on Crystal Growth (Grenoble, France, August 2004)<\/p>\n\n\n\n

\u201cFabrication of p-i-n Si0.5Ge0.5 Photodetectors on SiGe-on-Insulator Substrates\u201d
S. Koh, K. Sawano, Y. Shiraki, N. Usami, K. Nakajima, X. Huang, and S. Uda
1st International Conference on Group IV Photonics (Hong Kong, China, September 2004)<\/p>\n\n\n\n

\u201cObservation of strain field fluctuation in SiGe relaxed buffer layers and its influence on overgrown structures\u201d
K. Sawano, N. Usami, K. Nakagawa, and Y. Shiraki
7th China-Japan Symposium on Thin Films (Chengdu, China, September 2004)<\/p>\n\n\n\n

\u201cFabrication of strained Ge channel structures with extremely high hole mobility\u201d
T. Irisawa, K. Sawano, S. Koh, K. Nakagawa, and Y. Shiraki
Third international Workshop on new group-IV (Si-Ge-C) semiconductors, Sendai, Japan, October 12-13 (2004)<\/p>\n\n\n\n

\u201cElastic strain distribution in narrow strained Si channels\u201d
K. Arimoto, D. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano, S. Koh, Y. Shiraki, and N. Usami
Third international Workshop on new group-IV (Si-Ge-C) semiconductors, Sendai, Japan, October 12-13 (2004)<\/p>\n\n\n\n

\u201cFormation of high-quality thin straine-relaxed SiGe buffer layers by ion implantation\u201d
Y. Ozawa, K. Sawano, J. Yamanaka, N. Usami, K. Suzuki, K. Arimoto, S. Koh, K. Nakagawa, T. Hattori, and Y. Shiraki
Third international Workshop on new group-IV (Si-Ge-C) semiconductors, Sendai, Japan, October 12-13 (2004)<\/p>\n\n\n\n

\u201cFabrication of p-i-n Si0.5Ge0.5 photodetectors on SiGe-on insulator substrates\u201d
S. Koh, K. Sawano, N. Usami, J. Yamanaka, K. Nakagawa, K. Nakajima, X. Huang, S. Uda, and Y. Shiraki
Third international Workshop on new group-IV (Si-Ge-C) semiconductors, Sendai, Japan, October 12-13 (2004)<\/p>\n\n\n\n

\u201cStrain field fluctuation in strained-Si\/SiGe heterostructures\u201d
K. Sawano, N. Usami, K. Arimoto, S. Koh, K. Nakagawa, and Y. Shiraki
Third international Workshop on new group-IV (Si-Ge-C) semiconductors, Sendai, Japan, October 12-13 (2004)<\/p>\n\n\n\n

\u201cTransport Properties of Polycrystalline SiGe Thin Films Grown on SiO2\u201d
M. Mitsui, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano and Y. Shiraki
Materials Research Society 2004 Fall Meeting, Boston, USA, November (2004)<\/p>\n\n\n\n

<\/div>\n\n\n\n

2003<\/strong><\/p>\n\n\n\n

\u201cFormation of thin SiGe virtual substrates by ion implantation into Si substrates\u201d
K. Sawano, Y. Hirose, S. Koh, K. Nakagawa, T. Hattori, and Y. Shiraki
First International SiGe Technology and Device Meeting (ISTDM) 2003, Nagoya, January 2003<\/p>\n\n\n\n

<\/div>\n\n\n\n

2002<\/strong><\/p>\n\n\n\n

K. Sawano, Y. Hirose, S. Koh, K. Nakagawa, T. Hattori, and Y. Shiraki
\u201cRelaxation enhancement of SiGe thin layers by ion implantation into Si substrates\u201d
MBE XII 2002 Conference, San Francisco, September 2002<\/p>\n\n\n\n

K. Sawano, K. Arimoto, Y. Hirose, S. Koh, N. Usami, K. Nakagawa, T. Hattori, and Y. Shiraki
\u201cPlanarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures\u201d
MBE XII 2002 Conference, San Francisco, September 2002<\/p>\n\n\n\n

K. Sawano, K. Kawaguchi, Y. Hirose, S. Koh, K. Nakagawa, T. Hattori, and Y. Shiraki
\u201cFabrication of Ultrasmooth SiGe Virtual Substrates by CMP and their Application to Strained Si Modulation-Doped Structures\u201d
Second International Workshop on New Group IV (Si-Ge-C) Semiconductors, Kofu, June 2002<\/p>\n\n\n\n

<\/div>\n\n\n\n

2001<\/strong><\/p>\n\n\n\n

K. Sawano, K. Kawaguchi, T. Ueno, S. Koh, K. Nakagawa, and Y. Shiraki
\u201cSurface Smoothing of SiGe Strain-relaxed Buffer Layers by Chemical Mechanical Polishing\u201d
E-MRS Spring Meeting 2001 Second International Conference on Silicon Epitaxy and Heterostructures, France, June 2001<\/p>\n\n\n\n

<\/div>\n\n\n\n

2000<\/strong><\/p>\n\n\n\n

K. Sawano, M. Ikeda, K. Ohdaira, K. Arimoto, N. Usami and Y. Shiraki
\u201cOn the origin of drastic enhancement of the no-phonon transition in GaAsP\/GaP indirect quantum wells with an ultrathin AlP layer\u201d
International Conference on Superlattices, Microstructures, and Microdevices 2000 (ICSMM-2000), Korea, September 2000<\/p>\n","protected":false},"excerpt":{"rendered":"International conference(\uff5e2025, 6) 2025 R. Yokoki, S. Sano, M. Aikawa, H. Imai, S. Kikuoka, K. Sawano\u201cStrong r […]","protected":false},"author":2,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-412","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/pages\/412","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/comments?post=412"}],"version-history":[{"count":12,"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/pages\/412\/revisions"}],"predecessor-version":[{"id":1316,"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/pages\/412\/revisions\/1316"}],"wp:attachment":[{"href":"https:\/\/www.comm.tcu.ac.jp\/nano_slabo\/en\/wp-json\/wp\/v2\/media?parent=412"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}