{"id":108,"date":"2021-02-17T18:16:14","date_gmt":"2021-02-17T09:16:14","guid":{"rendered":"http:\/\/grp.tcu.ac.jp\/nano-hlabo\/?page_id=108"},"modified":"2025-11-21T11:10:50","modified_gmt":"2025-11-21T02:10:50","slug":"publications","status":"publish","type":"page","link":"https:\/\/www.comm.tcu.ac.jp\/nanoelectronics\/publications\/","title":{"rendered":"PUBLICATIONS"},"content":{"rendered":"\r\n

Publications<\/span><\/h4>\r\n\r\n\r\n\r\n
    \r\n\r\n
  1. Taku Yoshimura, Hiroshi Shigeno, Rikuto Yamamura, Kenji Watanabe, Takashi Taniguchi, and Yusuke Hoshi<\/strong>:
    \r\n\"Electrical and optical properties of hBN capped MoTe2 monolayers fabricated by gold-mediated exfoliation\"
    \r\nPhysica Status Solidi (b) Vol. 262, pp.2400374 (2024).<\/div>\r\n<\/li>\r\n

    <\/p>\r\n\r\n

  2. Shuto Muranaka, Naoto Horikawa, Ryousuke Ishikawa, Kenji Watanabe, Takashi Taniguchi, and Yusuke Hoshi<\/strong>:
    \r\n\"Anisotropic Wet Etching of WSe2<\/sub> and MoS2<\/sub> for Twist-Angle Extraction of Heterobilayers\"
    \r\nThe Journal of Physical Chemistry C Vol. 128. pp.7211 (2024).<\/div>\r\n<\/li>\r\n

    <\/p>\r\n\r\n

  3. S. Muranaka, S. Nogamida, K.O. Hara, K. Sawano, and Y. Hoshi<\/strong>:
    \r\n\"Tellurium nanosheets with structural anisotropy formed from defective MoTe2<\/sub> multilayers\"
    \r\nAIP Advances Vol. 13, pp.075219 (2023).<\/div>\r\n<\/li>\r\n

    <\/p>\r\n\r\n

  4. Y. Sugiura, M. Sasaki, Y. Wagatsuma, K. Yamada, Y. Hoshi<\/strong>, M. Yamada, K. Hamaya, and K. Sawano:
    \r\n\"Strong room-temperature EL emission from Ge-on-Si (111) diodes\"
    \r\nJournal of Crystal Growth Vol. 594, pp.126766 (2022).<\/div>\r\n<\/li>\r\n

    <\/p>\r\n\r\n

  5. K. Yamada, Y. Wagatsuma, K. Okada, Y. Hoshi<\/strong>, and K. Sawano:
    \r\n\"Enhanced electroluminescence from Ge-on-Si by precise in-situ doping and post-annealing\"
    \r\nApplied Physics Express Vol. 14, pp.045504 (2021).<\/div>\r\n<\/li>\r\n

    <\/p>\r\n\r\n

  6. T. Kuroda, Y. Hoshi<\/strong>, S. Masubuchi, M. Okada, R. Kitaura, K. Watanabe, T. Taniguchi, and T. Machida:
    \r\n\"Dark-state impact on the exciton recombination of WS2<\/sub> monolayers as revealed by multi-time-scale pump-probe spectroscopy\"
    \r\nPhysical Review B Vol. 102, pp.195407 (2020).<\/div>\r\n<\/li>\r\n

    <\/p>\r\n\r\n

  7. S. Hayashida, R. Saitoh, K. Watanabe, T. Taniguchi, K. Sawano, and Y. Hoshi<\/strong>:
    \r\n\"Reduced inhomogeneous broadening in hBN-encapsulated MoTe2<\/sub> monolayers by thermal treatment\"
    \r\nACS Applied Electronic Materials Vol. 2, pp.2739 (2020).<\/div>\r\n<\/li>\r\n

    <\/p>\r\n\r\n

  8. Y. Wagatsuma, M.M. Alam, K. Okada, Y. Hoshi<\/strong>, M. Yamada, K. Hamaya, and K. Sawano:
    \r\n\"Crack formation in strained SiGe grown on Ge-on-Si (111) and its suppression by patterning substrates\"
    \r\nMaterials Science in Semiconductor Processing Vol. 115, pp.105153 (2020).<\/div>\r\n<\/li>\r\n\r\n

    <\/p>\r\n

  9. K. Niikura, N. Yamahata, Y. Hoshi<\/strong>, T. Takamura, K. Saito, M. Konagai, and K. Sawano:
    \r\n\"Enhanced photoluminescence from strained Ge-on-Insulator surface-passivated with hydrogenated amorphous Si\"
    \r\nMaterials Science in Semiconductor Processing Vol. 115, pp.105104 (2020).<\/div>\r\n<\/li>\r\n\r\n

    <\/p>\r\n

  10. M.M. Alam, Y. Wagatsuma, K. Okada, Y. Hoshi<\/strong>, M. Yamada, K. Hamaya, and K. Sawano:
    \r\n\"Critical thickness of strained Si1-xGex on Ge (111) and Ge-on-Si(111)\"
    \r\nApplied Physics Express Vol. 12, pp.081005 (2019).<\/div>\r\n<\/li>\r\n\r\n

    <\/p>\r\n

  11. K. Takeda, J. Yoneda, T. Otsuka, T. Nakajima, M.R. Delbecq, G. Allison, Y. Hoshi<\/strong>, N. Usami, K.M. Itoh, S. Oda, T. Kodera, and S.Tarucha:
    \r\n\"Optimized electrical control of a Si\/SiGe spin qubit in the presence of an induced frequency shift\"
    \r\nnpj Quantum information Vol. 4, pp.54-1-6 (2018).<\/div>\r\n<\/li>\r\n\r\n

    <\/p>\r\n

  12. M.M. Alam, Y. Hoshi<\/strong>, and K. Sawano:
    \r\n\"Structural properties of compressive strained Ge channels fabricated on Si (111) and Si (100)\"
    \r\nSemiconductor Science and Technology Vol. 33, pp. 124008-1-6 (2018).<\/div>\r\n<\/li>\r\n\r\n

    <\/p>\r\n

  13. Y. Hoshi<\/strong>, M. Okada, R. Moriya, S. Masubuchi, K. Watanabe, T. Taniguchi, R. Kitaura, and T. Machida:
    \r\n\"Effect of a pick-and-drop process on optical properties of a CVD-grown monolayer tungsten disulfide\"
    \r\nPhysical Review Materials, Vol.2, pp.064003 (2018).<\/div>\r\n<\/li>\r\n\r\n

    <\/p>\r\n

  14. J. Yoneda, K. Takeda, T. Otsuka, T. Nakajima, M.R. Delbecq, G. Allison, T. Honda, T. Kodera, S. Oda, Y. Hoshi<\/strong>, N. Usami, K.M. Itoh, and S. Tarucha:
    \r\n\"A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise\"
    \r\nNature Nanotechnology, Vol. 13, pp. 102 (2018). <\/div>\r\n<\/li>\r\n\r\n

    <\/p>\r\n

  15. M.M. Rahman, Y.C. Tsai, M.Y. Lee, A. Higo, Y.M. Li, Y. Hoshi<\/strong>, N. Usami, S. Samukawa:
    \r\n\"Effect of ALD-Al2<\/sub>O3<\/sub> passivated silicon quantum dot superlattices on p\/i\/n(+) solar cells\"
    \r\nIEEE Transaction on Electron Devices, Vol. 64, pp.2886-2892 (2017). <\/div>\r\n<\/li>\r\n\r\n

    <\/p>\r\n

  16. Y. Arisawa, Y. Hoshi<\/strong>, K. Sawano, J. Yamanaka, K. Arimoto, C. Yamamoto, and N. Usami:
    \r\n\"Thermal stability of compressively strained Si\/relaxed Si1-x<\/sub>Cx<\/sub> heterostructures formed on Ar ion implanted Si (100) substrates\"
    \r\nMaterials Science in Semiconductor Processing, Vol. 70, pp.127-132 (2017). <\/div>\r\n<\/li>\r\n\r\n

    <\/p>\r\n

  17. T. Tayagaki, D. Furuta, O. Aonuma, I. Takahashi, Y. Hoshi<\/strong>, Y. Kurokawa, and N. Usami:
    \r\n\"Optical characterization of double-side-textured silicon wafer based on photonic nanostructures for thin-wafer crystalline silicon solar cells\"
    \r\nJapanese Journal of Applied Physics, Vol. 56, pp.04CS01-1 - 04CS01-5 (2017). <\/div>\r\n<\/li>\r\n\r\n

    <\/p>\r\n

  18. Y. Hoshi<\/strong>, T. Kuroda, M. Okada, R. Moriya, S. Masubuchi, K. Watanabe, T. Taniguchi, R. Kitaura, and T. Machida:
    \r\n\"Suppression of exciton-exciton annihilation in tungsten disulfide monolayers encapsulated by hexagonal boron nitrides\"
    \r\nPhysical Review B: Rapid Communications, Vol. 95, pp. 241403-1 - 241403-6 (2017). <\/div>\r\n<\/li>\r\n<\/ol>\r\n<\/ul>\r\n
    2016\u5e74\u4ee5\u524d\u306e\u696d\u7e3e\u306f(https:\/\/researchmap.jp\/yh_0912)<\/strong>\u3092\u53c2\u7167\u3057\u3066\u304f\u3060\u3055\u3044\u3002<\/div>\r\n

    <\/p>\r\n

    <\/p>\r\n\r\n\r\n\r\n\r\n\r\n

    Presentations<\/span><\/h4>\r\n\r\n\r\n\r\n
      \r\n\r\n
    1. T. Ono, T. Mori, T. Ebisawa K. Watanabe, T. Taniguchi, Y. Hoshi,\r\n
      \"Electrical Properties of Field-Effect Transistors with Monolayer MoTe2 Channels Fabricated by Meta-Assisted Exfoliation Technique\"\r\n
      MNC 2025, 19P-1-19 (Nov. 20 2025, Tokyo)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    2. T. Ebisawa, K. Itoh, T. Oono, Y. Hoshi,\r\n
      \"Effect of Te flux on the CVD growth of Multilayered MoTe2\"\r\n
      Graphene week 2025, PB12 (Sep. 24 2025, Italy)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    3. S. Tokimura, K. Watanabe, T. Taniguchi, Y. Hoshi,\r\n
      \"Anisotropic wet etching of hBN-supported WSe2 multilayers\"\r\n
      The 69th FNTG, 1P-37 (Sep. 24 2025, Taiwan)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    4. T. Yoshimura, K. Watanabe, T. Taniguchi, Y. Hoshi,\r\n
      \"Effect of Adsorption Molecules on Charge transfer in MoTe2 Monolayers Prepared by Gold-Mediated Exfoliation\"\r\n
      ISNTT2024, We-54 (Dec. 4 2024, Kanagawa)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    5. T. Yoshimura, H. Shigeno, K. Watanabe, T. Taniguchi, Y. Hoshi,\r\n
      \"Effect of Environmental Conditions on the Electrical Properties of MoTe2 Monolayers with hBN Cap Layer\"\r\n
      PRiME2024, G03-2338 (OCt. 9 2024, Honolulu)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    6. T. Yoshimura, H. Shigeno, R. Ishikawa, K. Watanabe, T. Taniguchi, Y. Hoshi,\r\n
      \"Electrostatically Tunable PN Junction in 1L-MoTe2 Formed By Gold-Mediated Exfoliation\"\r\n
      PRiME2024, D02-1830 (Oct. 9 2024, Honolulu)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    7. T. Yoshimura, R. Yamamura, H. Shigeno, K. Watanabe, T. Taniguchi, Y. Hoshi,\r\n
      \"Electrical properties of hBN-capped MoTe2 monolayers fabricated by gold mediated exfoliation\"\r\n
      The 67th Fullerens-Nanotubes-Graphene General Symposium, 1P-9 (Sep. 1 2024, Kochi)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    8. S. Muranaka, N. Horikawa, R. Ishikawa, Y. Hoshi,\r\n
      \"Anisotropic wet etching of WSe2 multilayers assisted by photo-induced carriers\"\r\n
      The 66th Fullerens-Nanotubes-Graphene General Symposium, 3P-32 (Mar. 8 2024, Aichi)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    9. R. Yamamura, K. Watanabe, T. Taniguchi, Y. Hoshi,\r\n
      \"Crystal quality of MoTe2 monolayer fabricated by gold-mediated exfoliation and its electrical properties\"\r\n
      IWDTF2023, P-8 (OCt. 24 2023, Ishikawa)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    10. N. Horikawa, R. Ishikawa, K. Watanabe, T. Taniguchi, Y. Hoshi,\r\n
      \"Anisotropic wet etching of tungsten diselenide multilayers by using H2O2-based etchant\"\r\n
      The 65th Fullerens-Nanotubes-Graphene General Symposium, 3P-15 (Sep. 6 2023, Fukuoka)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    11. S. Muranaka, S. Nogamida, K.O. Hara, K. Sawano, Y. Hoshi,\r\n
      \"Formation of a tellurium nanosheet with structural anisotropy by annealing defective MoTe2 multilayers\"\r\n
      The 65th Fullerens-Nanotubes-Graphene General Symposium, 2P-18 (Sep. 5 2023, Fukuoka)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    12. C. Chiba, S. Sugawara, E. Kitayoshi, K. Watanabe, T. Taniguchi, K. Sawano, H. Fujita and Y. Hoshi,\r\n
      \"Piezoelectricity of the hBN\/1L-MoS2 heterostructure membrane\"\r\n
      2022 International Conference on Solid State Devices and Materials, H-1-04 (Sep. 27 2022, Chiba)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    13. K. Yamase, N. Horikawa, K. Watanabe, T. Taniguchi, and Y. Hoshi,\r\n
      \"Twist angle dependence of MoS2\/WSe2 heterostructures on active energy of interlayer exciton\"\r\n
      European Materials Research Society (E-MRS) Spring meeting 2021, C.13.19, (Jun. 1 2022, Online)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    14. Y. Odagiri, K. Watanabe, T. Taniguchi, and Y. Hoshi,\r\n
      \"Effect of thermal treatment on electrical properties of hBN-encapsulated MoTe2\"\r\n
      European Materials Research Society (E-MRS) Spring meeting 2021, C.13.21, (Jun. 1 2022, Online)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    15. Y. Hoshi, Y. Odagiri, S. Hayashida, K. Watanabe, T. Taniguchi, and K. Sawano,\r\n
      \"Improvement of Electrical Properties in hBN-encapsulated MoTe2 Monolayers by Thermal Anneal\"\r\n
      International Symposium on Novel Materials and Quantum Technologies (ISNTT 2021), P2-04 (Dec. 16 2021, Online)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    16. K. Yamase, K. Watanabe, T. Taniguchi, and Y. Hoshi,\r\n
      \"Layer number dependence of electroluminescence from MoTe2 p-n junction formed by dual back-gate voltage modulation\"\r\n
      Graphene week 2021 (Sep. 24 2021, Online)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    17. Y. Odagiri, S. Hayashida, K. Watanabe, T. Taniguchi, and Y. Hoshi,\r\n
      \"Effects of hBN thicknesses on light outcoupling from hBN-encapsulated TMDC monolayers\"\r\n
      2021 International Conference on Solid State Devices and Materials, H-5-05 (Sep. 8 2021, Online)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    18. S. Nogamida, S. Hayashida, K.O. Hara, K. Sawano, Y. Hoshi,\r\n
      \"Investigation of a defect-assisted metal formed by annealing MoTe2 crystals with Ar ion implantation\"\r\n
      European Materials Research Society (E-MRS) Spring meeting 2021, J.PI.19 (May 31 2021, Online)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    19. Y.Hoshi, S. Hayashida, S. Nogamida, K. Sawano, K. Watanabe, T. Taniguchi\r\n
      \"Influences of thermal treatment on crystal quality of semiconducting MoTe2 monolayers encapsulated by hexagonal boron nitrides\"\r\n
      European Materials Research Society (E-MRS) Spring meeting 2021, J.PI.17, (May 31 2021, Online)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    20. K. Yamase, S. Hayashida, K. Watanabe, T. Taniguchi, K. Sawano, Y. Hoshi,\r\n
      \"Electroluminescence from hBN-encapsulated bilayer MoTe2 by dual back-gate voltage modulation\"\r\n
      Compound Semiconductor Week (CSW) 2021, 5080616, (May 9-13 2021, Online)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n\r\n

    21. S. Hayashida, R. Saito, K. Watanabe, T. Taniguchi, K. Sawano, Y. Hoshi,\r\n
      \"Crystal quality degradation in MoTe2 monolayers by a thermal annealing and its suppression by hexagonal boron nitride encapsulation\"\r\n
      PRiME2020, B01-1132, (October 4-9 2020, Online)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n

    22. Y. Hoshi, S. Hayashida, K. Watanabe, T. Taniguchi, and K. Sawano,\r\n
      \"Influences of thermal treatment on crystal quality of semiconducting MoTe2 monolayers encapsulated by hexagonal boron nitride\"\r\n
      E-MRS 2020 spring meeting, (Postponed)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n

    23. Shunya Hayashida, Kenji Watanabe, Takashi Taniguchi, Kentarou Sawano, and Yusuke Hoshi,\r\n
      \"Thermal Stability of Mechanically-Exfoliated Monolayer and Few Layer MoTe2\"\r\n
      ISCSI-2019, WP2-17, (November 2019, Sendai, Japan)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n

    24. Yusuke Hoshi, Shunya Hayashida and Kentarou Sawano,\r\n
      \"Optical interferences in monolayer tungsten disulfide and tungsten diselenide encapsulated by hexagonal boron nitride\" <\/div>\r\n
      ISCSI-2019, WP2-13, (November 2019, Sendai, Japan)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n

    25. Shunya Hayashida, Kenji Watanabe, Takashi Taniguchi, Kentarou Sawano, and Yusuke Hoshi,\r\n
      \"Effect of thermal annealing at a low temperature on exciton dynamics in semiconducting MoTe2 crystals\" <\/div>\r\n
      SSDM2019, PS-8-14, (September 2019, Nagoya, Japan)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n

    26. Yusuke Hoshi, Mitsuhiro Okada, Rai Moriya, Satoru Masubuchi, Kenji Watanabe, Takashi Taniguchi, Ryo Kitaura, and Tomoki Machida,\r\n
      \"Dramatic changes of optical properties in a CVD-grown monolayer tungsten disulfide by a pick-and-drop process\" <\/div>\r\n
      SSDM2018, M-2-05, (September 2018, Tokyo, Japan)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n

    27. M.M. Alam, Y. Wagatsuma, K. Okada, Y. Hoshi<\/strong>, M. Yamada, K. Hamaya, and K. Sawano:\r\n
      \"Critical thickness of strained Si1-xGex on Ge (111) and Ge-on-Si(111)\" <\/div>\r\n
      Applied Physics Express Vol. 12, pp.081005 (2019)<\/div>\r\n<\/li>\r\n\r\n

      <\/p>\r\n

    28. Yusuke Hoshi, Takashi Kuroda, Mitsuhiro Okada, Rai Moriya, Satoru Masubuchi, Kenji Watanabe, Takashi Taniguchi, Ryo Kitaura, and Tomoki Machida,\r\n
      \"Suppression of exciton-exciton annihilation in tungsten disulphide and its robust luminescence at strong photoexcitation\" <\/div>\r\n
      Graphene Week 2017, 3769790, (September 2017, Athens, Greece) <\/div>\r\n<\/li>\r\n<\/ol>\r\n<\/ul>\r\n\r\n
      2016\u5e74\u4ee5\u524d\u306e\u56fd\u969b\u4f1a\u8b70\u767a\u8868\u306f(https:\/\/www.risys.gl.tcu.ac.jp\/Main.php?action=01&type=detail&tchCd=5002083)<\/strong>\u3092\u53c2\u7167\u3057\u3066\u304f\u3060\u3055\u3044\u3002\r\n<\/div>\r\n

      <\/p>\r\n

      <\/p>\r\n\r\n\r\n","protected":false},"excerpt":{"rendered":"

      Taku Yoshimura, Hiroshi Shigeno, Rikuto Yamamura, Kenji Watanabe, Takashi Taniguchi, and Yusuke Hoshi: \"Electr […]<\/p>\n","protected":false},"author":2,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"om_disable_all_campaigns":false,"_mi_skip_tracking":false,"_monsterinsights_sitenote_active":false,"_monsterinsights_sitenote_note":"","_monsterinsights_sitenote_category":0,"vkexunit_cta_each_option":"","footnotes":""},"class_list":["post-108","page","type-page","status-publish","hentry"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/www.comm.tcu.ac.jp\/nanoelectronics\/wp-json\/wp\/v2\/pages\/108","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.comm.tcu.ac.jp\/nanoelectronics\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.comm.tcu.ac.jp\/nanoelectronics\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.comm.tcu.ac.jp\/nanoelectronics\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.comm.tcu.ac.jp\/nanoelectronics\/wp-json\/wp\/v2\/comments?post=108"}],"version-history":[{"count":31,"href":"https:\/\/www.comm.tcu.ac.jp\/nanoelectronics\/wp-json\/wp\/v2\/pages\/108\/revisions"}],"predecessor-version":[{"id":851,"href":"https:\/\/www.comm.tcu.ac.jp\/nanoelectronics\/wp-json\/wp\/v2\/pages\/108\/revisions\/851"}],"wp:attachment":[{"href":"https:\/\/www.comm.tcu.ac.jp\/nanoelectronics\/wp-json\/wp\/v2\/media?parent=108"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}