International conference | Nano electronics Lab. Sawano Lab.

International conference(～2024, 6)

2024

T. Inoue, A. Odashima, M. Nagao, T. Ito, O. Yoshikawa, K. Sawano
“Enhancement of PL intensity from Ge microbridges via surface passivation by ALD”
E-MRS 2024 Spring Meeting, Strasbourg, France, May 27–31, 2024

Ayaka Odashima, Takahiro Inoue, Riku Ishikawa and Kentarou Sawano
“Fabrication of suspended Ge microbridges based on Ge-on-SOI and effects of metal film deposition”
E-MRS 2024 Spring Meeting, Strasbourg, France, May 27–31, 2024

Yuka Shibahara, Shuya Kikuoka, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya, Kentarou Sawano
“Study on crack formation in strained SiGe/Ge-on-Si(111) via ultrasonic treatment”
E-MRS 2024 Spring Meeting, Strasbourg, France, May 27–31, 2024

2023

Kentarou Sawano
“Strain engineering of Si/Ge heterostructures based on Ge virtual substrates” Invited
E-MRS 2023 Spring Meeting, Strasbourg, France, May 29 – June 2, 2023

Takahiro Inoue, Youya Wagatsuma, Reo Ikegaya, Ayaka Odashima, Masaki Nagao, Kentarou Sawano
“Fabrication of Si/Ge microbridges based on Ge-on-Si (110) and effect of bridge length”
The Joint ISTDM-ICSI 2023, Como, Italy, May 21-25, 2023

Shuya Kikuoka, Youya Wagatsuma, Yuwa Sugiura, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
“Diode characteristics and room temperature EL emission of strained SiGe/Ge quantum well LEDs”
The Joint ISTDM-ICSI 2023, Como, Italy, May 21-25, 2023

R. Kanesawa, Y. Wagatsuma, S. Kikuoka, Y. Sugiura, M. Yamada, K. Hamaya and K. Sawano
“Fabrication of crack free strained SiGe/Ge multiple quantum wells on Ge on Si(111) by the patterning method”
The Joint ISTDM-ICSI 2023, Como, Italy, May 21-25, 2023

2022

Md. Mahfuz Alam, Youya Wagatsuma, Kazuya Okada, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano
“Strain engineering of heteroepitaxial SiGe/Ge on Si with various crystal orientations” Invited
The 242nd ECS Meeting, Atlanta, USA, Oct. 9-13, 2022

T. Inoue, Y. Wagatsuma, L. Ikegaya, A. Odashima, M. Nagao and K. Sawano
“Epitaxially grown of SiGe on Ge microbridge and observation of strong resonant light emission”
The 242nd ECS Meeting, Atlanta, USA, Oct. 9-13, 2022

Ayaka Odashima, Takahiro Inoue, Youya Wagatsuma, Reo Ikegaya, Masaki Nagao and Kentarou Sawano
“Fabrication of microbridges based on Ge-on-SOI and observation of strong resonant light emission”
The 242nd ECS Meeting, Atlanta, USA, Oct. 9-13, 2022

Reo Ikegaya, Takahiro Inoue, Takuya Komazawa, Youya Wagatsuma and Kentarou Sawano
“Fabrication of strained Ge microbridge structures with meshed pads and their optical properties“
The 242nd ECS Meeting, Atlanta, USA, Oct. 9-13, 2022

Shuya Kikuoka, Youya Wagatsuma, Yuwa Sugiura, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
“Strong Room-temperature EL emissions from strained SiGe/Ge-on-Si (111) LEDs“
The 242nd ECS Meeting, Atlanta, USA, Oct. 9-13, 2022

Rena Kanesawa, Youya Wagatsuma, Syuya Kikuoka, Yuwa Sugiura and Kentarou Sawano
“Fabrication of thick SiGe／Ge multiple quantum wells on Ge-on-Si and their optical properties”
The 242nd ECS Meeting, Atlanta, USA, Oct. 9-13, 2022

Youya Wagatsuma, Rena Kanesawa, Md. Mahfuz Alam, Kazuya Okada, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
“Evaluation of crack propagation in strained SiGe on Ge(111) patterned with various etching thickness”
The 242nd ECS Meeting, Atlanta, USA, Oct. 9-13, 2022

Rena Kanesawa, Youya Wagatsuma, Syuya Kikuoka, Yuwa Sugiura, Kentarou Sawano
Light emissions from strained Si1-xGex/Ge MQW formed on Ge-on-Si
The 22nd International Vacuum Congress IVC-22, Sapporo, Japan, Sep. 11-16, 2022

Youya Wagatsuma, Rena Kanesawa, Md. Mahfuz Alam, Kazuya Okada, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano
Increased critical thickness of strained SiGe layers on Ge-on-Si(111)
The 22nd International Vacuum Congress IVC-22, Sapporo, Japan, Sep. 11-16, 2022

T. Inoue, Y. Wagatsuma, R. Ikegaya, A. Odashima, M. Nagao, K. Sawano
“Pumping power dependence of light emissions from strained Ge microbridges”
The 22nd International Vacuum Congress IVC-22, Sapporo, Japan, Sep. 11-16, 2022

T. Inoue, Y. Wagatsuma, R. Ikegaya, A. Odashima, M. Nagao, K. Sawano
“Fabrication of SiGe/Ge microbridges based on Ge-on-Si(110) and observation of resonant light emission”
APAC Silicide 2022, July 30 – August 1, 2022, online

Youya Wagatsuma, Rena Kanesawa, Md. Mahfuz Alam, Kazuya Okada, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano
“Crack formations in SiGe/Ge MQW layers on Ge-on-Si(111) substrates”
APAC Silicide 2022, July 30 – August 1, 2022, online

Takahiro Inoue, Youya Wagatsuma, Leo Ikegaya, Kentarou Sawano
“Fabrication of branch-like bridges based on Ge-on-Si(110) and observation of strong resonant light emission”
The 2022 Spring Meeting of the European Materials Research Society (E-MRS), May 30 – June 3, 2022 online

Youya Wagatsuma, Rena Kanesawa, Md. Mahfuz Alam, Kazuya Okada, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano
“Effects of etching depth on crack generation in strained SiGe films on mesa-patterned Ge”
The 2022 Spring Meeting of the European Materials Research Society (E-MRS), May 30 – June 3, 2022 online

2021

Yuwa Sugiura, Masashi Sasaki, Youya Wagatsuma, Koudai Yamada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
“Strong room-temperature EL emission from Ge-on-Si(111) diodes with ferromagnetic Schottky-tunnel electrodes”
ISNTT2021, December 14-17, 2021 online.

Takahiro Inoue, Youya Wagatsuma, Leo Ikegaya, Kazuya Okada and Kentarou Sawano
“Strong resonant light emission in strained Ge microbridges”
ISNTT2021, December 14-17, 2021 online.

Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
“Observation of photoluminous from SiGe/Ge MQW on Ge-on-Si(111)”
ISNTT2021, December 14-17, 2021 online.

Takahiro Inoue, Youya Wagatsuma, Leo Ikegaya, Kazuya Okada and Kentarou Sawano
“Epitaxial growth of strained Si0.2Ge0.8 on Ge microbridge”
21st ICMBE 2021, September 6-9, 2021 online.

Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
“Suppression of crack formation and propagation in strained SiGe by patterning Ge-on-Si substrates”
21st ICMBE 2021, September 6-9, 2021 online.

Yuwa Sugiura, Youya Wagatsuma, Koudai Yamada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
“Room temperature EL from strained Ge-on-Si(111) diode structures”
EMRS 2021 Spring Meeting, May 31-June 4, 2021 online

Takahiro Inoue, Youya Wagatsuma, Kodai Yamada and Kentarou Sawano
“Effect of uniaxial strain direction on luminescence properties of strained Ge microbridge structures”
EMRS 2021 Spring Meeting, May 31-June 4, 2021 online

Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano “Suppression of crack formation in strained SiGe layers by patterning of Ge-on-Si substrates”
EMRS 2021 Spring Meeting, May 31-June 4, 2021 online

Kairi Yamase, Shunya Hayashida, Kenji Watanabe, Takashi Taniguchi, Kentarou Sawano, Yusuke Hoshi
“Electroluminescence from hBN-encapsulated bilayer MoTe2 by dual back-gate voltage modulation”
Compound Semiconductor Week 2021, May 2021

Satoshi Nogamida, Shunya Hayashida, Kousuke O Hara, Kentarou Sawano, Yusuke Hoshi
“Investigation of a defect-assisted-metal formed by annealing MoTe2 crystals with Ar ion implantation”
The 2022 Spring Meeting of the European Materials Research Society, May 2021 online

Yusuke Hoshi, Shunya Hayashida, Satoshi Nogamida, Kenji Watanabe, Takashi Taniguchi, Kentarou Sawano
“Influences of thermal treatment on crystal quality of semiconducting MoTe2 monolayers encapsulated by hexagonal boron nitrides”
The 2022 Spring Meeting of the European Materials Research Society, May, 2021 online

Yusuke Hoshi, Yuma Odagiri, Shunya Hayashida, Kenji Watanabe, Takashi Taniguchi, Kentarou Sawano
“Improvement of Electrical Properties in hBN-encapsulated MoTe2 monolayers by Thermal Anneal”
International Symposium on Novel maTerials and quantum Technologies, Dec. 2021

2020

Kentarou Sawano, Youya Wagatsuma, Md. Mahfuz Alam, Kaisei Omata, Kenta Niikura, Shougo Shibata, Yusuke Hoshi, Michihiro Yamada and Kohei Hamaya
“Strain engineering of Si/Ge heterostructures on Ge-on-Si platform” (invited)
PRiME 2020, October 4-9, 2020 online

Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
“Increased critical thickness for strained SiGe on Ge-on-Si(111)”
PRiME 2020, October 4-9, 2020 online

Kodai Yamada, Yusuke Hoshi and Kentarou Sawano
“Strong room-temperature electroluminescence from Ge-on-Si by precise in-situ doping control”
PRiME 2020, October 4-9, 2020 online

K. Arimoto, J. Yamanaka, K. O. Hara, K. Sawano, N. Usami and K. Nakagawa
“Engineering Strain, Defects and Electronic Properties of (110)-Oriented Strained Si”
PRiME 2020, October 4-9, 2020 online

Hiroshi Nohira, Eriko Shigesawa and Kentarou Sawano
“Formation and Evaluation of Al2O3 Layer by Direct ALD on Epitaxial SiGe”
PRiME 2020, D01-1388, October 4-9, 2020 online

S. Hayashida, R. Saito, K. Watanabe, T. Taniguchi, K. Sawano, Y. Hoshi
“Crystal quality degradation in MoTe2 monolayers by a thermal annealing and its suppression by hexagonal boron nitride encapsulation”
PRiME2020, B01-1132, (October 4-9 2020, Online)

Miyake Takuma, Rikito Osako, Xuejun Xu, Kentarou Sawano, Takuya Maruizumi, Takehiko Tawara and Hideki Gotoh
Silicon Microdisk Resonators in the Mid-Infrared for On-Chip Gas Sensing
SSDM 2020, September 27-30, 2020 online

2019

Shunya Hayashida, Kenji Watanabe, Takashi Taniguchi, Kentarou Sawano, and Yusuke Hoshi
“Effect of thermal annealing at a low temperature on exciton dynamics in semiconducting MoTe2 crystals”
SSDM2019, Nagoya University, Nagoya, Japan, September 2-5, 2019

Yusuke Hoshi, Shunya Hayashida, Kentarou Sawano
“Optical Interferences in Monolayer Tungsten Disulfide and Tungsten Diselenide Encapsulated by Hexagonal Boron nitride”
ISCSIⅧ (8th International Symposium on Control of Semiconductor Interfaces), Tohoku University, Sendai, Japan, November 27-30, 2019

Kenta Niikura, Yuta Kumazawa, Natsuki Yamahata, Yusuke Hoshi, Tsukasa Takamura, Kimihiko Saito, Makoto Konagai, Kentarou Sawano
“Enhanced Photoluminescence from Strained Ge-on-Insulator Surface-Passivated with Hydrogenated Amorphous Si”
ISCSIⅧ (8th International Symposium on Control of Semiconductor Interfaces), Tohoku University, Sendai, Japan, November 27-30, 2019

Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya, Kentarou Sawano
“Surface Morphology Evolution of Strained Si1-xGex Grown on Relaxed Ge(111)”
ISCSIⅧ (8th International Symposium on Control of Semiconductor Interfaces), Tohoku University, Sendai, Japan, November 27-30, 2019

Shunya Hayashida, Kenji Watanabe, Takashi Taniguchi, Kentarou Sawano, and Yusuke Hoshi
“Thermal stability of mechanically-exfoliated monolayer and few layer MoTe2”
ISCSIⅧ (8th International Symposium on Control of Semiconductor Interfaces), Tohoku University, Sendai, Japan, November 27-30, 2019

Md. Mahfuz Alam and Kentarou Sawano (Invited)
“Si/Ge Heterostructures with Various Surface Orientations”
EMN Epitaxy 2019, Amsterdam, the Netherlands, June 18-20, 2019

Md. Mahfuz Alam, Kazuya Okada, Yuya Wagatsuma, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
“Strain states and critical thickness of Si1-xGex epitaxial layers on Ge-on-Si(111)”
ISTDM / ICSI 2019 Conference, Madison, USA, June 2-6, 2019

2018

Kentarou Sawano, Xuejun Xu, Takuya Maruizumi
“Germanium light source monolithically integrated on Si platform” (Invited)
International Conference on Small Science 2018 (ICSS 2018), Rome, Italy, July 4, 2018

Md. Mahfuz Alam, Keijiro Sato, Kosuke Sawada, Kentarou Sawano
“Structural and electrical properties of compressive strained Ge channels fabricated on Si (111) and Si (100)”
Joint ISTDM / ICSI 2018, Potsdam, Germany, May 27 – 31, 2018

Ryotaro Matsuoka, Eriko Shigesawa, Satoru Miyamoto, Kentarou Sawano and K.M. Itoh
“Fabrication of Ge MOS with low interface trap density by ALD of Al2O3 on epitaxially grown Ge”
Joint ISTDM / ICSI 2018, Potsdam, Germany, May 27 – 31, 2018

Eriko Shigesawa, Masashi Fukumoto, Ryotaro Matsuoka, Ryosuke Sano, Kohei M. Itoh, Kentarou Sawano and Hiroshi Nohira
“Formation of high quality Al2O3/Ge interface by ALD directly on epitaxial Ge”
Joint ISTDM / ICSI 2018, Potsdam, Germany, May 27 – 31, 2018

K. Oki, K. Arimoto, J. Yamanaka, K. Nakagawa, K, Sawano
“Fabrication and evaluation of Ge on Si (110) by using two-step growth method”
Joint ISTDM / ICSI 2018, Potsdam, Germany, May 27 – 31, 2018

Yuta Kumazawa, Xuejun Xu, Kentarou Sawano, Takuya Maruizumi
“Effects of post annealing on in-situ n-doped Ge-on-Si”
Joint ISTDM / ICSI 2018, Potsdam, Germany, May 27 – 31, 2018

R. Sano, S. Konoshima, K. Sawano, H. Nohira
“Effect of Strain on the Binding Energy of Ge 2p and 3d core level”
Joint ISTDM / ICSI 2018, Potsdam, Germany, May 27 – 31, 2018

M. Tsukahara, M. Yamada, T. Naito, S. Yamada, K. Sawano, and K. Hamaya
“Room-temperature magnetoresistance effect in Ge lateral spin valve devices”
Joint ISTDM / ICSI 2018, Potsdam, Germany, May 27 – 31, 2018

Michihiro Yamada, Takahiro Naito, Makoto Tsukahara, Shinya, Yamada, Kentarou Sawano, and Kohei Hamaya
“Electrical spin injection and transport in a SiGe alloy”
Joint ISTDM / ICSI 2018, Potsdam, Germany, May 27 – 31, 2018

Kentarou Sawano, Xuejun Xu, Takuya Maruizumi
“CMOS-compatible Germanium Light Sources” (Invited)
233rd ECS Meeting, Seattle, USA, May 13-17, 2018

Kentarou Sawano
“Strained Ge Optoelectronic Devices Integrated on a Si Platform” (Invited)
Nanotech Malaysia 2018, Kuala Lumpur, Malaysia, May 7, 2018

2017

Peiji Zhou, Xuejun Xu, Yuta Kanda, Sho Matsushita, Kentarou Sawano, and Takuya Maruizumi,
“The Resonant Phenomenon in the PL Spectra Measured in the Tensile-Strained Ge Microbridges”,
2017 International Conference on Solid State Devices and Materials (SSDM), Sendai, Japan, September 19-23, 2017

Kentarou Sawano
“Controlled doping for Ge based optoelectronic devices” invited
2017 EMN/CC Meeting, Barcelona, Spain, Sep. 11-15 (2017)

Shiori Konoshima, Eisuke Yonekura, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, and Kentarou Sawano
“Formation of uniaxially strained Ge by local introduction of ion implantation defects”
29th International Conference on Defects in Semiconductors (ICDS2017), Matsue, Japan, July 31 – Aug. 4 (2017)

Ryotaro Matsuoka, Satoru Miyamoto, Kentarou Sawano, and Kohei M Itoh
“Low-Defect-Density Al2O3 Insulating Layer for Gate-Controlled Si/SiGe Quantum Dots”
29th International Conference on Defects in Semiconductors (ICDS2017), Matsue, Japan, July 31 – Aug. 4 (2017)

Kenji Oki, Madoka Kato, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, and Kentarou Sawano
“Effects of ion implantation defects on strain relaxation of SiGe layers on Si (110)”
29th International Conference on Defects in Semiconductors (ICDS2017), Matsue, Japan, July 31 – Aug. 4 (2017)

Hideaki Hashimoto, Yuta Kumazawa, Xuejun Xu, Kentarou Sawano, and Takuya Maruizumi
“Circular distributed Bragg reflector resonators on highly n-doped Ge-on-insulator”
10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10), Coventry, UK, May14-19 (2017)

Sho Matsushita, Yuta Kanda, Xu Xuejun, Kentarou Sawano, Takuya Maruizumi
“Resonant light emission from uniaxially tensile-strained Ge microbridges”
10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10), Coventry, UK, May14-19 (2017)

Xuejun Xu, Hideaki Hashimoto, Kentarou Sawano, and Takuya Maruizumi, “Resonant light emission from highly n-doped germanium-on-insulator microdisks with circular Bragg grating”, 2017 Conference on Lasers and Electro-Optics (CLEO: 2017), San Jose, US, May 14-19, 2017

M. Nomura, J. Nakagawa, K. Sawano, J. Maire, R. Anufriev, S. Volz
“Thermal Phonon MFP Spectrum Probing Using Phononic Crystals”
2017 MRS Spring Meeting & Exhibit, NM2.4.24, Phoenix, USA, April (2017).

Xuejun Xu, Hideaki Hashimoto, Keisuke Yoshida, Kentarou Sawano, and Takuya Maruizumi, “High Q-factor resonant photoluminescence from Ge-on-Insulator microdisks”, SPIE Photonics Europe 2016, Brussels, Belgium, April 4-7, 2016

2016

Kentarou Sawano
“Anisotropic strain engineering of Si/Ge heterostructures” Invited
2016 Global Research Efforts on Energy and Nanomaterials (GREEN 2016) Taipei, Taiwan, Dec. 24 (2016).

Kentarou Sawano
“Straining of Group IV Semiconductor Materials for Bandgap and Mobility Engineering” Invited
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2016), Honolulu, USA, Oct. 2-7 (2016).

Kentarou Sawano
“Anisotropic Strain Introduction into Si/Ge Hetero Structures” Invited
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2016), Honolulu, USA, Oct. 2-7 (2016).

H. Hashimoto, X. Xu, K. Sawano, T. Maruizumi
“Enhanced Light Emission from N-Doped Ge Microdisks by Thermal Oxidation”
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2016), Honolulu, USA, Oct. 2-7 (2016).

K. Sawano, K. Mizutani, K. Watanabe, X. Xu, T. Maruizumi
“Light Emission Enhancement from Ge Quantum Dots with Phosphorous -Doping”
19th International Conference on Molecular Beam Epitaxy (MBE 2016), Montpellier (France) (Sep 4-9, 2016)

M. Kato, T. Murakami, K. Arimoto, J. Yamanaka, K. Nakagawa, K, Sawano
“Fabrication of high-quality strain relaxed SiGe(110) films by controlling defects via ion implantation”
19th International Conference on Molecular Beam Epitaxy (MBE 2016), Montpellier (France) (Sep 4-9, 2016)

H. Hashimoto, X. Xu, K. Sawano, T. Maruizumi
“Highly N-doped Ge Microdisks with Circular Bragg Gratings on Ge-on-Insulator”
19th International Conference on Molecular Beam Epitaxy (MBE 2016), Montpellier (France) (Sep 4-9, 2016)

Y.Arisawa, K. Sawano and N. Usami
“Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1-xCx heterostructures using the defect control by ion implantation technique”
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan (Aug 7-12, 2016)

K. Sawano, K. Watanabe, K. Mizutani, X. Xu, T. Maruizumi
“Influences of Phosphorous δ-Doping at Ge Quantum Dots / Si Interface on Photoluminescence Properties and Dot Formation”
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan (Aug 7-12, 2016)

Shiori Konoshima, Eisuke Yonekura, Kentarou Sawano
“Fabrication of uniaxially strained Ge by selective ion implantation technique”
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan (Aug 7-12, 2016)

K. Arimoto, S. Yagi, J. Yamanaka, K. Nakagawa, N. Usami, K. Sawano
Hole Mobility in Strained Si/SiGe/Vicinal Si(110) Grown by Gas Source MBE
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan (Aug 7-12, 2016)

Kentarou Sawano
“Strained Ge-on-Insulator Substrates toward Optoelectronic Integrated Circuits” (Invited)
The International Conference on Small Science (ICSS 2016), Prague, Czech Republic (June 25-29, 2016)

Michihiro Yamada, Yuichi Fujita, Shinya Yamada, Kentarou Sawano, Kohei Hamaya
“Control of Electrical Properties in Heusler-Alloy/Ge Schottky Tunnel Contacts formed by Phosphorous δ-Doping with Si-Layer Insertion”
International SiGe Technology and Device Meeting 2016 (ISTDM2016), Nagoya, Japan (June 7-11, 2016)

You Arisawa, Yusuke Hoshi, Kentarou Sawano, Junji Yamanaka, Keisuke Arimoto, Chiaya Yamamoto, Noritaka Usami
“Thermal Stability of Compressively Strained Si/Relaxed Si1-xCx Heterostructures Formed on Ar Ion Implanted Si (100) Substrates”
International SiGe Technology and Device Meeting 2016 (ISTDM2016), Nagoya, Japan (June 7-11, 2016)

Yuuki Yajima, Yuta Ariyama, Kentarou Sawano
“Formation of Strained Ge-on-Insulator (GOI) Substrates using SiGe Etching Stop Layers”
International SiGe Technology and Device Meeting 2016 (ISTDM2016), Nagoya, Japan (June 7-11, 2016)

Yuichi Fujita, Michihiro Yamada, Shinya Yamada, Kentarou Sawano, Takeshi Kanashima, Kohei Hamaya
“Room-Temperature Electrical Spin Injection and Detection in n-Ge through Co2FeSi0.5Al0.5/n+-Ge Schottky Tunnel Contacts”
International SiGe Technology and Device Meeting 2016 (ISTDM2016), Nagoya, Japan (June 7-11, 2016)

2015

Yuichi Fujita, Takayasu Oka, Yuta Nagatomi, Keisuke Yamamoto, Michihiro Yamada, Kentarou Sawano, Shinya Yamada, Takeshi Kanashima, Hiroshi Nakashima, and Kohei Hamaya
“Low-temperature fabrication of a gate stack structure for Ge-based spin-MOSFET”
2015 International Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (2015 IWDTF), Tokyo, Japan (November 2-4, 2015)

Kentarou Sawano
“Strained Germanium based Nano-Structures toward High Performance Optoelectronic Integrated Circuits” (Invited)
International Symposium for Advanced Materials Research 2015 (ISAMR 2015), Sun Moon Lake, Taiwan (August 16-20, 2015)

K. Sawano, T. Nagashima, H. Hashimoto, X. Xu, K. Hamaya, and T. Maruizumi
“Fabrication of Strained Ge-on-Insulator for Ge-based Optoelectronic Devices”
E-MRS 2015 Spring Meeting, Lille, France (May 11-15, 2015)

Y. Hoshi, K. Arimoto, K. Sawano, Y. Arisawa, K. Fujiwara, J. Yamanaka, K. Nakagawa, N. Usami
“Compressively strained Si/Si1-xCx heterostructures formed by Ar ion implantation technique“
9th International Conference on Silicon Epitaxy and Heterostructures, Montreal, Canada (May 2015)

Michihiro Yamada, Kentarou Sawano, Masashi Uematsu, and Kohei. M. Itoh
“Suppression of the segregation of delta-doped P by the insertion of Si layers in Ge”
9th International Conference on Silicon Epitaxy and Heterostructures, Montreal, Canada (May 2015)

Rai Moriya, Kentarou Sawano, Yusuke Hoshi, Satoru Masubuchi, Yasuhiro Shiraki, Takaaki Koga, and Tomoki Machida
“Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Ge/SiGe Quantum Well”
21st International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-21), July 26-31, 2015, Sendai, Japan

Christian Neumann, Johannes Kierig, Florian Forster, Andreas Wild, J. W. Ager, E. E. Haller, Gerhard Abstreiter, Kentarou Sawano, Stefan Ludwig, and Dominique Bougeard
Robust quantum dot devices for qubits in isotopically purified 28Si
21st International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-21), July 26-31, 2015, Sendai, Japan

2014

Kentarou Sawano
“Anisotropic Strain Engineering in Si/Ge Heterostructures” (Invited)
The Collaborative Conference on Crystal Growth (3CG 2014), Phuket, Thailand (November 4-7, 2014)

Michihiro Yamada, Kentarou Sawano and Kohei. M. Itoh
“Formation of ultrashallow Ohmic contacts for n-type Ge by P delta-doping”
7th International Silicon-Germanium Technology and Device Meeting, 2014 ISTDM, Singapore, (June 2-4, 2014) .

Eisuke Yonekura, Junji Yamanaka, Keisuke Arimoto, Kiyokazu Nakagawa, Yasuhiro Shiraki and Kentarou Sawano
“Formation of Uniaxially Strained SiGe with High Ge Concentrations by Selective Ion Implantation”
7th International Silicon-Germanium Technology and Device Meeting, 2014 ISTDM, Singapore, (June 2-4, 2014) .

Tomonori Nagashima, Hironori Katsumata, Kohei Hamaya, Masanobu Miyao, Yasuhiro Shiraki, Kentarou Sawano
“Electrical properties of strained Ge(111)-on-Insulator (GOI) fabricated by Ge epitaxy on Si and layer transfer”
7th International Silicon-Germanium Technology and Device Meeting, 2014 ISTDM, Singapore, (June 2-4, 2014) .

Kentarou Sawano, Tatsuya Nakama, Xuejun Xu, Yasuhiro Shiraki, Takuya Maruizumi
“Enhancement of Photoluminescence from Si/Ge Quantum Dots by Phosphorus -doping”
18th International Conference on Molecular Beam Epitaxy, Flagstaff, USA (September 7-12, 2014)

Michihiro Yamada, Kentarou Sawano and Kohei. M. Itoh
“Suppression of segregation in P delta doping for ultrashallow Ohmic contact on n-type Ge”
18th International Conference on Molecular Beam Epitaxy, Flagstaff, USA (September 7-12, 2014)

2013

K. Sawano
“Strain engineered Si/Ge heterostructures” (Invited)
The International Conference on Small Science (ICSS 2013), Workshop on Nano/Micro Structure, Las Vegas, USA, December 15-18, 2013

K. Sawano, Y. Shoji, N. Funabashi, E. Yonekura, K. Nakagawa, Y. Shiraki
“Uniaxially strained Si/Ge heterostructures grown on selectively ion-implanted substrates”
17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), Warsaw, Poland, August 11-16, 2013

K. Sawano, Y. Hoshi, S. Endo, H. Katsumata, T. Nagashima, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Hamaya, M. Miyao and Y. Shiraki
“Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer”
The 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan, June 2-7, 2013

Keisuke Nishida, Xuejun Xu, Kentarou Sawano, Takuya Maruizumi, Yasuhiro Shiraki
“Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy”
The 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan, June 2-7, 2013

K. Sawano, Y. Shoji, E. Yonekura, K. Nakagawa, and Y. Shiraki
“Formation of Uniaxially Strained Ge by Selective Ion Implantation”
E-MRS 2013 Spring Meeting, Symposium I: Strasbourg, France, May 30, 2013

Shinya Yamada, Makoto Kawano, Kohei Tanikawa, Kentarou Sawano, Masanobu Miyao, Kohei Hamaya
“Epitaxial Ge/Metallic Silicide Grown on Si with Atomically Smooth Heterointerfaces”
The 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan, June 2-7, 2013

2012

K. Sawano, Y. Hoshi, S. Nagakura, K. Arimoto, K. Nakagawa, N. Usami, Y. Shiraki
“On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique”
The 17th International Conference on Molecular Beam Epitaxy, Nara, Japan, September 26, 2012

Y. Hoshi, S. Kubo, K. Sawano, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Hamaya, M. Miyao and Y. Shiraki
“Formation of high-quality Ge(111) layers on Si (111) substrates”
The 17th International Conference on Molecular Beam Epitaxy, Nara, Japan, September 27, 2012

K. Sawano, Y. Hoshi, S. Nagakura, K. Arimoto, K. Nakagawa, N. Usami, and Y. Shiraki
“Formation of Uniaxially Strained Si/Ge Channels on SiGe Buffers Strain-controlled with Selective Ion Implantation”
Pacific Rim Meeting (PRiME) 2012, Symposium:E17 – SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 5, Honolulu, USA, October 10, 2012

Y. Hoshi, R. Moriya, K. Sawano, N. Usami, T. Machida and Y. Shiraki
“Magnetotransport properties of 20-nm-thick strained Ge with various compressive stresses”
2012 International Conference on Solid State Devices and Materials (SSDM 2012), Kyoto, Japan, September 25-27, 2012

2011

Kentarou Sawano
“Ion Implantation for Strain Engineering of Si-based Semiconductor” invited
BIT’s 1st Annual World Congress of Nano-S&T 2011, Dalian, China, October 26, 2011

Yusuke Hoshi, Kentarou Sawano, Kohei Hamaya, Masanobu Miyao, and Yasuhiro Shiraki
“Fabrication of strained thin-film GOI based on wafer bonding”
ICSi-7 2011 (International Conference on Si Epitaxy and Heterostructures), Leuven, Belgium, Aug. 30, 2011

Shigenori Inoue, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa Kentarou Sawano, Yasuhiro Shiraki, Atsushi Moriya, Yasuhiro Inokuchi, and Yasuo Kunii
“Microstructure Change of Si0.99C0.01 Thin Films Caused by Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation and Successive Rapid Thermal Annealing Treatment”
ICSi-7 2011 (International Conference on Si Epitaxy and Heterostructures), Leuven, Belgium, Aug. 30, 2011

Takuya Maruizumi, Jiro Ushio, Shotaro Abe, Kentarou Sawano, and Yasuhiro Shiraki
“Surface segregation behavior of B, Ga, Sb, and As dopant atoms on Ge(100) and Ge(111) examined with a first-principles method”
ICSi-7 2011 (International Conference on Si Epitaxy and Heterostructures), Leuven, Belgium, Aug. 30, 2011

E. S. Kannan, I. Bisotto, R. Murali, T. J. Beck, L. Jalabert, K. Sawano, H. Fujita, and J.-C. Portal
“Electron-antidot interaction in antidot lattice with different etching parameter”
The 19th international conference on Electronic Properties of Two-Dimensional Systems (EP2DS19), Florida, USA, July 25, 2011

I. Bisotto, E. S. Kannan, R. Murali, T. J. Beck, L. Jalabert, K. Sawano, H. Fujita, and J.-C. Portal
“Ratchet photovoltage in Si/SiGe heterostructure for different antidot lattice parameters”
The 19th international conference on Electronic Properties of Two-Dimensional Systems (EP2DS19), Florida, USA, July 25, 2011

T. Tanaka, K. Sawano , Y. Hoshi, Y. Shiraki, and K. M. Itoh
“Temperature dependence of two-dimensional hole gas mobility in a strained Ge quantum well”
The 19th international conference on Electronic Properties of Two-Dimensional Systems (EP2DS19), Florida, USA, July 25, 2011

Y. Hoshi, K. Sawano, N. Usami, K. Arimoto, K. Nakagawa, and Y. Shiraki
“Stripe line width dependence of anisotorpic strain states induced into SiGe films by selective ion implantation technique“
European Materials Research Society (E-MRS) 2011 Spring Meeting, Symposium I, France, 9 May, 2011

2010

K. Sawano, Y. Hoshi, K. Kasahara, K. Yamane, K. Hamaya, M. Miyao, and Y. Shiraki
“Formation of ultra-shallow Ohmic contacts on n-Ge by Sb δ-doping”
MRS 2010 Fall Meeting, Symposium AA: Group IV Semiconductor Nanostructures and Applications, Boston, USA, Dec. 2, 2010

Y. Hoshi, K. Sawano, A. Yamada, N. Usami, K. Arimoto, K. Nakagawa, and Y. Shiraki
“Effect of line width on uniaxial strain states of SiGe layers fabricated by selective ion implantation”
5th International SiGe Technology and Device Meeting (ISTDM) 2010, Stockholm, Sweden, May 24, 2010

K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, N. Usami, K. Arimoto, K. Nakagawa, and Y. Shiraki
“Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels”
E-MRS 2010 Spring Meeting, Symposium H : Post-Si CMOS electronic devices: the role of Ge and III-V materials Strasbourg, France, June 10, 2010

K. Kasahara, Y. Ando, K.Yamane, Y. Enomoto, K. Sawano, K. Hamaya and M. Miyao,
“Fe3Si/Ge(111) Schottky contacts for spin injection into a Ge channel”,
11th Joint MMM-Intermag Conference (2010/1/20). Washington DC, USA

Y. Ando, K. Kasahara, Y. Enomoto, K.Yamane, K. Hamaya, K. Sawano, T. Kimura and M. Miyao,
“Nonlocal voltage detection of spin transport in silicon using Fe3Si/Si Schottky tunnel contacts “,
11th Joint MMM-Intermag Conference (2010/1/19). Washington DC, USA

2009

Y. Ando, K. Kasahara, Y. Enomoto, K. Yamane, K. Hamaya, K. Sawano, T. Kimura, and M. Miyao,
“Nonlocal voltage detection of spin transport in silicon using Fe3Si/Si Schottky tunnel contacts”,
International IMR Workshop on Group IV Spintronics (2009/10/4).

“Room-temperature observation of quantum size effects in photoluminescence of Si/Si0.8Ge0.2 nanocolumns prepared by neutral beam etching”
R. Hirano, S. Miyamoto, M. Yonemoto, S. Samukawa, K. Sawano, Y. Shiraki, and K. M. Itoh
International Symposium on Quantum Nanophotonics and Nanoelectronics 2009, Tokyo, Japan, November 18-20, 2009

Kentarou Sawano, Yusuke Hoshi, Atsunori Yamada, Yoshiyasu Hiraoka, Noritaka Usami, Keisuke Arimoto, Kiyokazu Nakagawa, and Yasuhiro Shiraki
“Formation of Uniaxially Strained SiGe by Selective Ion Implantation Technique”
E-MRS 2009 Spring Meeting, Symposium I : Silicon and Germanium issues for future CMOS devices, Strasbourg, France, June 8-12. 2009

Kentarou Sawano
“CMP for high mobility strained Si/Ge Channels” Invited
2009 MRS (Materials Research Society) Spring Meeting, Symposium E : Science and Technology of Chemical Mechanical Planarization (CMP), San Francisco, USA, April 16, 2009

“Probing the Behaviors of Point Defects in Silicon and Germanium Using Isotope Superlattices”
Masashi Uematsu, Miki Naganawa, Yasuo Shimizu, Kohei M. Itoh, Kentarou Sawano, Yasuhiro Shiraki, and Eugene E. Haller
The 216th Meeting of the Electrochemical Society, Analytical Techniques for Semiconductor Materials and Process Characterization 6, Wien, Austria, October 4-9 (2009)

“Deactivation Mechanism of Ion-Implanted Arsenic in Germanium”
Masashi Uematsu, Miki Naganawa, Yasuo Shimizu, Kohei M. Itoh, Kentarou Sawano, Yasuhiro Shiraki, and Eugene E. Haller
The 25th International Conference on Defects in Semiconductors (ICDS-25). St Petersburg, Russia, July 20-24 (2009)

“Identification of scattering mechanisms limiting the mobility of two-dimensional electron gas in Si/SiGe heterostructures”
G. Tsuchiya, K. Sawano, Y. Shiraki, K. M. Itoh
The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18), Kobe, July 19-24 (2009)

“Landau level crossing and pseudospin phase transitions in Si quantum wells”
Kohei Sasaki, Ryuichi Masutomi, Kiyohiko Toyama, Kentarou Sawano, Yasuhiro Shiraki and Tohru Okamoto
The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18), Kobe, July 19-24 (2009)

“Cyclotron resonance of two-dimensional electrons in a Si quantum well”
R. Masutomi, A. Sekine, K. Sasaki, K. Sawano, Y. Shiraki and T. Okamoto
The 18th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-18), Kobe, July 19-24 (2009)

“Absence of Transient Enhanced Diffusion in Ion-Implanted Ge Investigated by Isotope Superlattices”
Masashi Uematsu, Miki Naganawa, Yasuo Shimizu, Kohei M. Itoh, Kentarou Sawano, Yasuhiro Shiraki, and Eugene E. Haller
E-MRS 2009 Spring Meeting, Symposium I : Silicon and Germanium issues for future CMOS devices, Strasbourg, France, June 8-12. 2009

“Ion dose and species dependence of strain relaxation of SiGe buffer layers formed by ion-implantation technique”
Y.Hoshi, K.Sawano, Y.Hiraoka, A.Yamada, K.Arimoto, N.Usami,K.Nakagawa, Y.Shiraki
6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, California, USA, May 17-22 (2009)

2008

“Local Control of Strain in SiGe by Ion Implantation Technique”
K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami, K. Nakagawa, Y. Shiraki
4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4), Sendai, May 21-24, 2008

“Crystalline morphology of step-graded SiGe layers grown on exact and vicinal (110) Si substrates”
K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami, and K. Nakajima
4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4), Sendai, May 21-24, 2008

“Fabrication of thin strain-relaxed SiGe buffer layers with high-Ge composition by ion implantation method”
Y. Hoshi, K. Sawano, Y. Hiraoka, N. Usami, K. Nakagawa, and Y. Shiraki
4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4), Sendai, May 21-24, 2008

“Strain relaxation mechanism in step-graded SiGe/Si(110) structure grown at 650 – 800 °C”
M. Watanabe, K. Arimoto, J. Yamanaka, K. Nakagawa, N. Usami, K. Nakajima, K. Sawano, and Y. Shiraki
4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4), Sendai, May 21-24, 2008

“Structural and transport properties of strained Ge and SiGe grown on patterned substrates”
G. Kawaguchi, K. Shimizu, K. Arimoto, M. Watanabe, K. Nakagawa, J. Yamanaka, N. Usami, K. Nakajima, K. Sawano, and Y. Shiraki
4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4), Sendai, May 21-24, 2008

“Local Strain Control of SiGe by Selective Ion Implantation Technique”
K. Sawano, Y. Hoshi, Y. Hiraoka, S. Kannan, Y. Shiraki, N. Usami, and K. Nakagawa
4th International SiGe Technology and Device Meeting (ISTDM) 2008, Taiwan, May 11-14, 2008

“Development of Thin SiGe Virtual Substrate with High Ge Composition by Ion Implantation Method”
Yusuke Hoshi, Kentarou Sawano, Yoshiyasu Hiraoka, Yuu Satoh, Atsunori Yamada, Yuta Ogawa, Yasuhiro Shiraki, Noritaka Usami, and Kiyokazu Nakagawa
4th International SiGe Technology and Device Meeting (ISTDM) 2008, Taiwan, May 11-14, 2008

“Observation of Pronounced Effect of Compressive Strain on Room-Temperature Transport Properties of 2DHG Confined in Ge Quantum Wells”
Maksym Myronov, K. Sawano, Y. Shiraki, and K.M. Itoh
4th International SiGe Technology and Device Meeting (ISTDM) 2008, Taiwan, May 11-14, 2008

“Strain Relaxation Mechanisms in Compositionally Uniform and Step-Graded SiGe Films Grown on Si(110) Substrates”
Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Noritaka Usami, and Kazuo Nakajima
4th International SiGe Technology and Device Meeting (ISTDM) 2008, Taiwan, May 11-14, 2008

“Selective and Rapid Heating Method for Polycrystallization of Amorphous Si Using Microwave Plasma Irradiation”
S. Ashizawa, S. Ariizumi, M. Mitsui, K. Arimoto, J. Yamanaka, K. Nakagawa, T. Arai, T. Takamatsu, K. Sawano, and Y. Shiraki
4th International SiGe Technology and Device Meeting (ISTDM) 2008, Taiwan, May 11-14, 2008

2007

“Fabrication of SiGe Virtual Substrates by Ion Implantation Technique”
K. Sawano, Y. Shiraki, and K. Nakagawa
212th ECS Meeting, Washington, D.C., October 7-12. 2007

“Hole density and strain dependencies of hole effective mass in compressively strained Ge channel structures”
K. Sawano, Y. Kunishi, K. Toyama, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki
The 13th International Conference on Modulated Semiconductor structures (MSS-13), Genova, Italy, July 15-20, 2007

“Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature”
M. Myronov, K. Sawano, K. M. Itoh and Y. Shiraki
The 13th International Conference on Modulated Semiconductor structures (MSS-13), Genova, Italy, July 15-20, 2007

“Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique”
K. Sawano, A. Fukumoto, Y. Hoshi, J. Yamanaka, K. Arimoto, K. Nakagawa and Y. Shiraki
5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5), Marseille, France, May 20-25, 2007

“Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions”
K. Sawano, A. Fukumoto, Y. Hoshi, J. Yamanaka, K. Nakagawa, and Y. Shiraki
5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5), Marseille, France, May 20-25, 2007

“Investigations of strain states and improvements of thermal stability in strained-Si-on-Insulator (sSOI) structures”
Y. Hoshi, A. Fukumoto, K. Sawano, I. Cayrefourcq, M. Yoshimi and Y. Shiraki
5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5), Marseille, France, May 20-25, 2007

“Microstructure difference of Ni induced poly-crystallized SiGe by changing annealing atmosphere, and enhancement of Ni induced poly-crystallization of Si by Ar ion-implantation”
J. Yamanaka, T. Horie, M. Mitsui, K. Arimoto, K. Nakagawa, T. Sato, K. Sawano, Y. Shiraki, T. Moritani and M. Doi
5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5), Marseille, France, May 20-25, 2007

“Growth temperature dependence of the defect morphology in SiGe films grown on Si(110) substrates with step-graded buffer being employed”
Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Noritaka Usami and Kazuo Nakajima
5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5), Marseille, France, May 20-25, 2007

“Characterizations of Polycrystalline SiGe Films on SiO2 Grown by Gas-Source Molecular Beam Deposition”
M. Mitsui, M. Tamoto, K. Arimoto, J. Yamanaka, K. Nakagawa, T. Sato, N. Usami, K. Sawano and Y. Shiraki
5th International Conference on Silicon Epitaxy and Heterostructures (ICSi-5), Marseille, France, May 20-25, 2007

2006

“Fabrication of Ge channels with extremely high compressive strain and their magnetotransport properties”
K. Sawano, K. Toyama, T. Okamoto, N. Usami, K. Nakagawa, and Y. Shiraki
The 14th International Conference on Molecular Beam Epitaxy (MBE2006), Tokyo, Japan, September 3-8, 2006

“Growth temperature dependence of the lattice structures of SiGe films grown on Si(110) substrates by gas source MBE”
Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, and Noritaka Usami
The 14th International Conference on Molecular Beam Epitaxy (MBE2006), Tokyo, Japan, September 3-8, 2006

“The carrier density dependence of hole mobility in strained Ge channel modulation-doped structures”　
K. Sawano, Y. Kunishi, H. Satoh K. Nakagawa and Y. Shiraki
28th International conference on the Physics of Semiconductors (ICPS-28), Vienna, Austria, July 24-28 2006

“Strain and hole-density dependence of hole mobility in strained-Ge modulation-doped structures”
K. Sawano, H. Satoh, Y. Kunishi, K. Nakagawa, and Y. Shiraki
3rd International SiGe Technology and Device Meeting (ISTDM) 2006, Princeton, May 2006

“Investigations of Thermal Stability of strained-SOI (sSOI)”
A. Fukumoto, K. Sawano,Y. Hoshi, M. Yoshimi and Y. Shiraki,
3rd International SiGe Technology and Device Meeting (ISTDM) 2006, Princeton, May 2006

“Enhancement of Hole Mobility and Carrier Density in Ge Quantum Well SiGe Heterostructure via Implementation of Double-Sides Doping”
M. Myronov, K. Sawano and Y. Shiraki
3rd International SiGe Technology and Device Meeting (ISTDM) 2006, Princeton, May 2006

“The hole density dependence of hole mobility in compressively strained Ge channel modulation-doped structures”
K. Sawano, Y. Kunishi, H. Satoh, K. Nakagawa and Y. Shiraki
2nd International WorkShop on New Group Ⅳ Semiconductor Nanoelectronics, Sendai, Japan, October 2006

2005

“Mobility enhancement in strained-Ge modulation-doped structures by planarization of SiGe buffer layers”
K. Sawano, Y. Abe, H. Satoh, K. Nakagawa, and Y. Shiraki
12th International Conference on Modulated Semiconductor Structures (MSS12), Albuquerque, July 2005

“Strain field distribution in strained-Si / SiGe virtual substrates and its influence on roughness formation”
K. Sawano, N. Usami, K. Nakagawa, and Y. Shiraki
First International WorkShop on New Group Ⅳ Semiconductor Nanoelectronics, Sendai, Japan, May 2005

“Strain field and related roughness formation in SiGe relaxed buffer layers”
K. Sawano, N. Usami, K. Nakagawa, and Y. Shiraki
Forth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji, May 2005

“Strain Relaxation Mechanism of a SiGe Thin Film Grown on an Ion-Implanted Si substrate”
Junji Yamanaka, Kentarou Sawano, Kumiko Suzuk, Kiyokazu Nakagawa, Yusuke Ozawa, Takeo Hattori, and Yasuhiro Shiraki
Forth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji, May 2005

“Determination of Lattice Parameters of Strained-Si/SiGe Heterostructures Grown on Si(110) Substrates”
Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Shinji Koh, and Noritaka Usami
Forth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji, May 2005

“Transport Properties of SPC-Poly SiGe Crystallized at 700°C and GSMBE-Poly SiGe Grown at 600°C”
M. Mitsui, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano, N. Usami, Y. Shiraki
Forth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji, May 2005

“Strain field fluctuation in SiGe buffer layers and its reduction by ion implantation technique”
K. Sawano, N. Usami, K. Nakagawa, and Y. Shiraki
Seventh International Conference on New Phenomena in Mesoscopic Structures, Hawaii, USA, November 2005

2004

“High-Quality Thin SiGe Virtual Substrates Formed on Ion-Implanted Si Substrates”
K. Sawano, J. Yamanaka, Y. Ozawa, K. Suzuki, S. Koh, K. Nakagawa, T. Hattori, and Y. Shiraki
Second International SiGe Technology and Device Meeting (ISTDM) 2004, Frankfurt, May 2004

“Observation of Strain Field Fluctuation in SiGe Relaxed Buffer Layers and its Influence on Overgrown Structures”
K. Sawano, N. Usami, K. Arimoto, S. Koh, K. Nakagawa, and Y. Shiraki
Second International SiGe Technology and Device Meeting (ISTDM) 2004, Frankfurt, May 2004

“Changes in Elastic Deformation of Strained Si by Micro-Fabrication”
Keisuke Arimoto, Daisuke Furukawa, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Shinji Koh, Yasuhiro Shiraki, and Noritaka Usami
Second International SiGe Technology and Device Meeting (ISTDM) 2004, Frankfurt, Germany, May (2004)

“Observation of Dislocations in Strain-Relaxed Silicon-Germanium Thin Films with Flat Surfaces Grown on Ion-Implanted Silicon Substrates”
J. Yamanaka, K. Sawano, K. Nakagawa, K. Suzuki, Y. Ozawa, S. Koh, T. Hattori, and Y. Shiraki、
European Material Research Society (E-MRS) Meeting, Strasbourg, France, May 2004

“Growth of Functional Structures on SiGe-on-Insulator Substrates with High Ge Content”
S. Koh, K. Sawano, Y. Shiraki, X. Huang, S. Uda
14th International Conference on Crystal Growth (Grenoble, France, August 2004)

“Fabrication of p-i-n Si0.5Ge0.5 Photodetectors on SiGe-on-Insulator Substrates”
S. Koh, K. Sawano, Y. Shiraki, N. Usami, K. Nakajima, X. Huang, and S. Uda
1st International Conference on Group IV Photonics (Hong Kong, China, September 2004)

“Observation of strain field fluctuation in SiGe relaxed buffer layers and its influence on overgrown structures”
K. Sawano, N. Usami, K. Nakagawa, and Y. Shiraki
7th China-Japan Symposium on Thin Films (Chengdu, China, September 2004)

“Fabrication of strained Ge channel structures with extremely high hole mobility”
T. Irisawa, K. Sawano, S. Koh, K. Nakagawa, and Y. Shiraki
Third international Workshop on new group-IV (Si-Ge-C) semiconductors, Sendai, Japan, October 12-13 (2004)

“Elastic strain distribution in narrow strained Si channels”
K. Arimoto, D. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano, S. Koh, Y. Shiraki, and N. Usami
Third international Workshop on new group-IV (Si-Ge-C) semiconductors, Sendai, Japan, October 12-13 (2004)

“Formation of high-quality thin straine-relaxed SiGe buffer layers by ion implantation”
Y. Ozawa, K. Sawano, J. Yamanaka, N. Usami, K. Suzuki, K. Arimoto, S. Koh, K. Nakagawa, T. Hattori, and Y. Shiraki
Third international Workshop on new group-IV (Si-Ge-C) semiconductors, Sendai, Japan, October 12-13 (2004)

“Fabrication of p-i-n Si0.5Ge0.5 photodetectors on SiGe-on insulator substrates”
S. Koh, K. Sawano, N. Usami, J. Yamanaka, K. Nakagawa, K. Nakajima, X. Huang, S. Uda, and Y. Shiraki
Third international Workshop on new group-IV (Si-Ge-C) semiconductors, Sendai, Japan, October 12-13 (2004)

“Strain field fluctuation in strained-Si/SiGe heterostructures”
K. Sawano, N. Usami, K. Arimoto, S. Koh, K. Nakagawa, and Y. Shiraki
Third international Workshop on new group-IV (Si-Ge-C) semiconductors, Sendai, Japan, October 12-13 (2004)

“Transport Properties of Polycrystalline SiGe Thin Films Grown on SiO2”
M. Mitsui, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano and Y. Shiraki
Materials Research Society 2004 Fall Meeting, Boston, USA, November (2004)

2003

“Formation of thin SiGe virtual substrates by ion implantation into Si substrates”
K. Sawano, Y. Hirose, S. Koh, K. Nakagawa, T. Hattori, and Y. Shiraki
First International SiGe Technology and Device Meeting (ISTDM) 2003, Nagoya, January 2003

2002

K. Sawano, Y. Hirose, S. Koh, K. Nakagawa, T. Hattori, and Y. Shiraki
“Relaxation enhancement of SiGe thin layers by ion implantation into Si substrates”
MBE XII 2002 Conference, San Francisco, September 2002

K. Sawano, K. Arimoto, Y. Hirose, S. Koh, N. Usami, K. Nakagawa, T. Hattori, and Y. Shiraki
“Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures”
MBE XII 2002 Conference, San Francisco, September 2002

K. Sawano, K. Kawaguchi, Y. Hirose, S. Koh, K. Nakagawa, T. Hattori, and Y. Shiraki
“Fabrication of Ultrasmooth SiGe Virtual Substrates by CMP and their Application to Strained Si Modulation-Doped Structures”
Second International Workshop on New Group IV (Si-Ge-C) Semiconductors, Kofu, June 2002

2001

K. Sawano, K. Kawaguchi, T. Ueno, S. Koh, K. Nakagawa, and Y. Shiraki
“Surface Smoothing of SiGe Strain-relaxed Buffer Layers by Chemical Mechanical Polishing”
E-MRS Spring Meeting 2001 Second International Conference on Silicon Epitaxy and Heterostructures, France, June 2001

2000

K. Sawano, M. Ikeda, K. Ohdaira, K. Arimoto, N. Usami and Y. Shiraki
“On the origin of drastic enhancement of the no-phonon transition in GaAsP/GaP indirect quantum wells with an ultrathin AlP layer”
International Conference on Superlattices, Microstructures, and Microdevices 2000 (ICSMM-2000), Korea, September 2000