Publications

  1. Taku Yoshimura, Hiroshi Shigeno, Rikuto Yamamura, Kenji Watanabe, Takashi Taniguchi, and Yusuke Hoshi:
    "Electrical and optical properties of hBN capped MoTe2 monolayers fabricated by gold-mediated exfoliation"
    Physica Status Solidi (b) (Accepted).
  2. Shuto Muranaka, Naoto Horikawa, Ryousuke Ishikawa, Kenji Watanabe, Takashi Taniguchi, and Yusuke Hoshi:
    "Anisotropic Wet Etching of WSe2 and MoS2 for Twist-Angle Extraction of Heterobilayers"
    The Journal of Physical Chemistry C Vol. 128. pp.7211 (2024).
  3. S. Muranaka, S. Nogamida, K.O. Hara, K. Sawano, and Y. Hoshi:
    "Tellurium nanosheets with structural anisotropy formed from defective MoTe2 multilayers"
    AIP Advances Vol. 13, pp.075219 (2023).
  4. Y. Sugiura, M. Sasaki, Y. Wagatsuma, K. Yamada, Y. Hoshi, M. Yamada, K. Hamaya, and K. Sawano:
    "Strong room-temperature EL emission from Ge-on-Si (111) diodes"
    Journal of Crystal Growth Vol. 594, pp.126766 (2022).
  5. K. Yamada, Y. Wagatsuma, K. Okada, Y. Hoshi, and K. Sawano:
    "Enhanced electroluminescence from Ge-on-Si by precise in-situ doping and post-annealing"
    Applied Physics Express Vol. 14, pp.045504 (2021).
  6. T. Kuroda, Y. Hoshi, S. Masubuchi, M. Okada, R. Kitaura, K. Watanabe, T. Taniguchi, and T. Machida:
    "Dark-state impact on the exciton recombination of WS2 monolayers as revealed by multi-time-scale pump-probe spectroscopy"
    Physical Review B Vol. 102, pp.195407 (2020).
  7. S. Hayashida, R. Saitoh, K. Watanabe, T. Taniguchi, K. Sawano, and Y. Hoshi:
    "Reduced inhomogeneous broadening in hBN-encapsulated MoTe2 monolayers by thermal treatment"
    ACS Applied Electronic Materials Vol. 2, pp.2739 (2020).
  8. Y. Wagatsuma, M.M. Alam, K. Okada, Y. Hoshi, M. Yamada, K. Hamaya, and K. Sawano:
    "Crack formation in strained SiGe grown on Ge-on-Si (111) and its suppression by patterning substrates"
    Materials Science in Semiconductor Processing Vol. 115, pp.105153 (2020).
  9. K. Niikura, N. Yamahata, Y. Hoshi, T. Takamura, K. Saito, M. Konagai, and K. Sawano:
    "Enhanced photoluminescence from strained Ge-on-Insulator surface-passivated with hydrogenated amorphous Si"
    Materials Science in Semiconductor Processing Vol. 115, pp.105104 (2020).
  10. M.M. Alam, Y. Wagatsuma, K. Okada, Y. Hoshi, M. Yamada, K. Hamaya, and K. Sawano:
    "Critical thickness of strained Si1-xGex on Ge (111) and Ge-on-Si(111)"
    Applied Physics Express Vol. 12, pp.081005 (2019).
  11. K. Takeda, J. Yoneda, T. Otsuka, T. Nakajima, M.R. Delbecq, G. Allison, Y. Hoshi, N. Usami, K.M. Itoh, S. Oda, T. Kodera, and S.Tarucha:
    "Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift"
    npj Quantum information Vol. 4, pp.54-1-6 (2018).
  12. M.M. Alam, Y. Hoshi, and K. Sawano:
    "Structural properties of compressive strained Ge channels fabricated on Si (111) and Si (100)"
    Semiconductor Science and Technology Vol. 33, pp. 124008-1-6 (2018).
  13. Y. Hoshi, M. Okada, R. Moriya, S. Masubuchi, K. Watanabe, T. Taniguchi, R. Kitaura, and T. Machida:
    "Effect of a pick-and-drop process on optical properties of a CVD-grown monolayer tungsten disulfide"
    Physical Review Materials, Vol.2, pp.064003 (2018).
  14. J. Yoneda, K. Takeda, T. Otsuka, T. Nakajima, M.R. Delbecq, G. Allison, T. Honda, T. Kodera, S. Oda, Y. Hoshi, N. Usami, K.M. Itoh, and S. Tarucha:
    "A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise"
    Nature Nanotechnology, Vol. 13, pp. 102 (2018).
  15. M.M. Rahman, Y.C. Tsai, M.Y. Lee, A. Higo, Y.M. Li, Y. Hoshi, N. Usami, S. Samukawa:
    "Effect of ALD-Al2O3 passivated silicon quantum dot superlattices on p/i/n(+) solar cells"
    IEEE Transaction on Electron Devices, Vol. 64, pp.2886-2892 (2017).
  16. Y. Arisawa, Y. Hoshi, K. Sawano, J. Yamanaka, K. Arimoto, C. Yamamoto, and N. Usami:
    "Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates"
    Materials Science in Semiconductor Processing, Vol. 70, pp.127-132 (2017).
  17. T. Tayagaki, D. Furuta, O. Aonuma, I. Takahashi, Y. Hoshi, Y. Kurokawa, and N. Usami:
    "Optical characterization of double-side-textured silicon wafer based on photonic nanostructures for thin-wafer crystalline silicon solar cells"
    Japanese Journal of Applied Physics, Vol. 56, pp.04CS01-1 - 04CS01-5 (2017).
  18. Y. Hoshi, T. Kuroda, M. Okada, R. Moriya, S. Masubuchi, K. Watanabe, T. Taniguchi, R. Kitaura, and T. Machida:
    "Suppression of exciton-exciton annihilation in tungsten disulfide monolayers encapsulated by hexagonal boron nitrides"
    Physical Review B: Rapid Communications, Vol. 95, pp. 241403-1 - 241403-6 (2017).
2016年以前の業績は(https://researchmap.jp/yh_0912)を参照してください。

Presentations

  1. T. Yoshimura, K. Watanabe, T. Taniguchi, Y. Hoshi,
    "Effect of Adsorption Molecules on Charge transfer in MoTe2 Monolayers Prepared by Gold-Mediated Exfoliation"
    ISNTT2024, We-54 (Dec. 4 2024, Kanagawa)
  2. T. Yoshimura, H. Shigeno, K. Watanabe, T. Taniguchi, Y. Hoshi,
    "Effect of Environmental Conditions on the Electrical Properties of MoTe2 Monolayers with hBN Cap Layer"
    PRiME2024, G03-2338 (OCt. 9 2024, Honolulu)
  3. T. Yoshimura, H. Shigeno, R. Ishikawa, K. Watanabe, T. Taniguchi, Y. Hoshi,
    "Electrostatically Tunable PN Junction in 1L-MoTe2 Formed By Gold-Mediated Exfoliation"
    PRiME2024, D02-1830 (Oct. 9 2024, Honolulu)
  4. T. Yoshimura, R. Yamamura, H. Shigeno, K. Watanabe, T. Taniguchi, Y. Hoshi,
    "Electrical properties of hBN-capped MoTe2 monolayers fabricated by gold mediated exfoliation"
    The 67th Fullerens-Nanotubes-Graphene General Symposium, 1P-9 (Sep. 1 2024, Kochi)
  5. S. Muranaka, N. Horikawa, R. Ishikawa, Y. Hoshi,
    "Anisotropic wet etching of WSe2 multilayers assisted by photo-induced carriers"
    The 66th Fullerens-Nanotubes-Graphene General Symposium, 3P-32 (Mar. 8 2024, Aichi)
  6. R. Yamamura, K. Watanabe, T. Taniguchi, Y. Hoshi,
    "Crystal quality of MoTe2 monolayer fabricated by gold-mediated exfoliation and its electrical properties"
    IWDTF2023, P-8 (OCt. 24 2023, Ishikawa)
  7. N. Horikawa, R. Ishikawa, K. Watanabe, T. Taniguchi, Y. Hoshi,
    "Anisotropic wet etching of tungsten diselenide multilayers by using H2O2-based etchant"
    The 65th Fullerens-Nanotubes-Graphene General Symposium, 3P-15 (Sep. 6 2023, Fukuoka)
  8. S. Muranaka, S. Nogamida, K.O. Hara, K. Sawano, Y. Hoshi,
    "Formation of a tellurium nanosheet with structural anisotropy by annealing defective MoTe2 multilayers"
    The 65th Fullerens-Nanotubes-Graphene General Symposium, 2P-18 (Sep. 5 2023, Fukuoka)
  9. C. Chiba, S. Sugawara, E. Kitayoshi, K. Watanabe, T. Taniguchi, K. Sawano, H. Fujita and Y. Hoshi,
    "Piezoelectricity of the hBN/1L-MoS2 heterostructure membrane"
    2022 International Conference on Solid State Devices and Materials, H-1-04 (Sep. 27 2022, Chiba)
  10. K. Yamase, N. Horikawa, K. Watanabe, T. Taniguchi, and Y. Hoshi,
    "Twist angle dependence of MoS2/WSe2 heterostructures on active energy of interlayer exciton"
    European Materials Research Society (E-MRS) Spring meeting 2021, C.13.19, (Jun. 1 2022, Online)
  11. Y. Odagiri, K. Watanabe, T. Taniguchi, and Y. Hoshi,
    "Effect of thermal treatment on electrical properties of hBN-encapsulated MoTe2"
    European Materials Research Society (E-MRS) Spring meeting 2021, C.13.21, (Jun. 1 2022, Online)
  12. Y. Hoshi, Y. Odagiri, S. Hayashida, K. Watanabe, T. Taniguchi, and K. Sawano,
    "Improvement of Electrical Properties in hBN-encapsulated MoTe2 Monolayers by Thermal Anneal"
    International Symposium on Novel Materials and Quantum Technologies (ISNTT 2021), P2-04 (Dec. 16 2021, Online)
  13. K. Yamase, K. Watanabe, T. Taniguchi, and Y. Hoshi,
    "Layer number dependence of electroluminescence from MoTe2 p-n junction formed by dual back-gate voltage modulation"
    Graphene week 2021 (Sep. 24 2021, Online)
  14. Y. Odagiri, S. Hayashida, K. Watanabe, T. Taniguchi, and Y. Hoshi,
    "Effects of hBN thicknesses on light outcoupling from hBN-encapsulated TMDC monolayers"
    2021 International Conference on Solid State Devices and Materials, H-5-05 (Sep. 8 2021, Online)
  15. S. Nogamida, S. Hayashida, K.O. Hara, K. Sawano, Y. Hoshi,
    "Investigation of a defect-assisted metal formed by annealing MoTe2 crystals with Ar ion implantation"
    European Materials Research Society (E-MRS) Spring meeting 2021, J.PI.19 (May 31 2021, Online)
  16. Y.Hoshi, S. Hayashida, S. Nogamida, K. Sawano, K. Watanabe, T. Taniguchi
    "Influences of thermal treatment on crystal quality of semiconducting MoTe2 monolayers encapsulated by hexagonal boron nitrides"
    European Materials Research Society (E-MRS) Spring meeting 2021, J.PI.17, (May 31 2021, Online)
  17. K. Yamase, S. Hayashida, K. Watanabe, T. Taniguchi, K. Sawano, Y. Hoshi,
    "Electroluminescence from hBN-encapsulated bilayer MoTe2 by dual back-gate voltage modulation"
    Compound Semiconductor Week (CSW) 2021, 5080616, (May 9-13 2021, Online)
  18. S. Hayashida, R. Saito, K. Watanabe, T. Taniguchi, K. Sawano, Y. Hoshi,
    "Crystal quality degradation in MoTe2 monolayers by a thermal annealing and its suppression by hexagonal boron nitride encapsulation"
    PRiME2020, B01-1132, (October 4-9 2020, Online)
  19. Y. Hoshi, S. Hayashida, K. Watanabe, T. Taniguchi, and K. Sawano,
    "Influences of thermal treatment on crystal quality of semiconducting MoTe2 monolayers encapsulated by hexagonal boron nitride"
    E-MRS 2020 spring meeting, (Postponed)
  20. Shunya Hayashida, Kenji Watanabe, Takashi Taniguchi, Kentarou Sawano, and Yusuke Hoshi,
    "Thermal Stability of Mechanically-Exfoliated Monolayer and Few Layer MoTe2"
    ISCSI-2019, WP2-17, (November 2019, Sendai, Japan)
  21. Yusuke Hoshi, Shunya Hayashida and Kentarou Sawano,
    "Optical interferences in monolayer tungsten disulfide and tungsten diselenide encapsulated by hexagonal boron nitride"
    ISCSI-2019, WP2-13, (November 2019, Sendai, Japan)
  22. Shunya Hayashida, Kenji Watanabe, Takashi Taniguchi, Kentarou Sawano, and Yusuke Hoshi,
    "Effect of thermal annealing at a low temperature on exciton dynamics in semiconducting MoTe2 crystals"
    SSDM2019, PS-8-14, (September 2019, Nagoya, Japan)
  23. Yusuke Hoshi, Mitsuhiro Okada, Rai Moriya, Satoru Masubuchi, Kenji Watanabe, Takashi Taniguchi, Ryo Kitaura, and Tomoki Machida,
    "Dramatic changes of optical properties in a CVD-grown monolayer tungsten disulfide by a pick-and-drop process"
    SSDM2018, M-2-05, (September 2018, Tokyo, Japan)
  24. M.M. Alam, Y. Wagatsuma, K. Okada, Y. Hoshi, M. Yamada, K. Hamaya, and K. Sawano:
    "Critical thickness of strained Si1-xGex on Ge (111) and Ge-on-Si(111)"
    Applied Physics Express Vol. 12, pp.081005 (2019)
  25. Yusuke Hoshi, Takashi Kuroda, Mitsuhiro Okada, Rai Moriya, Satoru Masubuchi, Kenji Watanabe, Takashi Taniguchi, Ryo Kitaura, and Tomoki Machida,
    "Suppression of exciton-exciton annihilation in tungsten disulphide and its robust luminescence at strong photoexcitation"
    Graphene Week 2017, 3769790, (September 2017, Athens, Greece)
2016年以前の国際会議発表は(https://www.risys.gl.tcu.ac.jp/Main.php?action=01&type=detail&tchCd=5002083)を参照してください。