2018年5月27-31日にドイツのポツダムで開催された国際会議 Joint ISTDM/ICSI 2018において、D2のアランさん、M2の繁澤さん、大木君、熊澤君、佐野君が発表しました。
Md. Mahfuz Alam, Keijiro Sato, Kosuke Sawada, Kentarou Sawano
“Structural and electrical properties of compressive strained Ge channels fabricated on Si (111) and Si (100)”
Eriko Shigesawa, Masashi Fukumoto, Ryotaro Matsuoka, Ryosuke Sano, Kohei M. Itoh, Kentarou Sawano and Hiroshi Nohira
“Formation of high quality Al2O3/Ge interface by ALD directly on epitaxial Ge”
K. Oki, K. Arimoto, J. Yamanaka, K. Nakagawa, K, Sawano
“Fabrication and evaluation of Ge on Si (110) by using two-step growth method”
Yuta Kumazawa, Xuejun Xu, Kentarou Sawano, Takuya Maruizumi
“Effects of post annealing on in-situ n-doped Ge-on-Si”
R. Sano, S. Konoshima, K. Sawano, H. Nohira
“Effect of Strain on the Binding Energy of Ge 2p and 3d core level”
口頭発表を行うD2のAlamさん
