論文(～2025, 1)
2025
“Drastic enhancements of direct and indirect light emissions from Ge microbridge web-structures via efficient light confinements”
Takahiro Inoue, Ayaka Odashima, Masaki Nagao, and Kentarou Sawano
Applied Physics Express 18, 012001 (2025).
DOI: /10.35848/1882-0786/ada086
2024
“Crystallographic Orientations of Cracks Formed in SiGe/Ge/Si(111)”
Kota Tajima, Junji Yamanaka, Keisuke Arimoto, Kosuke O. Hara, Youya Wagatsuma and Kentarou Sawano
Microscopy and Microanalysis 30 (Suppl 1), 573–575 (2024).
DOI: /10.1093/mam/ozae044.267
“Enhancement of room temperature electroluminescence from strained SiGe/Ge(111) multiple quantum wells light emitting diodes”
Shuya Kikuoka, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya, Kentarou Sawano
Materials Science in Semiconductor Processing 176, 108299 (2024).
DOI: /10.1016/j.mssp.2024.108299
“Fabrication of crack-free strained SiGe/Ge multiple quantum wells on Ge-on-Si(111) by the patterning method”
R. Kanesawa, S. Kikuoka, Y. Shibahara, Y. Wagatsuma, M. Yamada, K. Hamaya and K. Sawano
Materials Science in Semiconductor Processing 177, 108300 (2024).
DOI: /10.1016/j.mssp.2024.108300
“Growth of all-epitaxial Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si”
Atsuya Yamada, Michihiro Yamada, Shuhei Kusumoto, Julio A. do Nascimento, Connor Murrill, Shinya Yamada, Kentarou Sawano, Vlado K. Lazarov, Kohei Hamaya
Materials Science in Semiconductor Processing 173, 108140 (2024).
DOI: /10.1016/j.mssp.2024.108140
“Al–Ge-paste-induced liquid phase epitaxy of Si-rich SiGe(111) for epitaxial Co-based Heusleralloys”
Michihiro Yamada, Shota Suzuki, Ai I. Osakae, Kazuaki Sumi, Takahiro Inoue, Azusa N. Hattori, Shinya Yamada, Kentarou Sawano, Marwan Dhamrin, Kohei Hamaya
Materials Science in Semiconductor Processing 174, 108232 (2024).
DOI: /10.1016/j.mssp.2024.108232
“Effect of Sn doping on low-temperature growth of Ge epilayers on half-metallic Co2FeSi”
Michihiro Yamada, Shuhei Kusumoto, Atsuya Yamada, Kentarou Sawano, Kohei Hamaya
Materials Science in Semiconductor Processing 171, 107987 (2024).
DOI: 10.1016/j.mssp.2023.107987
2023
“Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain”
Keisuke Yamamoto, Takuro Matsuo, Michihiro Yamada, Youya Wagatsuma, Kentarou Sawano, Kohei Hamaya
Materials Science in Semiconductor Processing 167, 107763 (2023).
DOI: 10.1016/j.mssp.2023.107763
“Tellurium nanosheets with structural anisotropy formed from defective MoTe2 multilayers”
Shuto Muranaka, Satoshi Nogamida, Kosuke O. Hara, Kentarou Sawano and Yusuke Hoshi
AIP Advances 13, 075219 (2023).
DOI: 10.1063/5.0155417
“Significant reduction of crack propagation in the strained SiGe/Ge(111) induced by the local growth on the depth controlled area patterning”
Youya Wagatsuma, Rena Kanesawa, Md. Mahfuz Alam, Kazuya Okada, Takahiro Inoue, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
Applied Physics Express 16, 015502 (2023)
DOI: 10.35848/1882-0786/aca751
“Influences of lattice strain and SiGe buffer layer thickness on electrical characteristics of strained Si/SiGe/Si(110) heterostructures”
Taisuke Fujisawa, Atsushi Onogawa, Miki Horiuchi, Yuichi Sano, Chihiro Sakata, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa and Keisuke Arimoto
Materials Science in Semiconductor Processing 161 (2023) 107476
DOI: 10.1016/j.mssp.2023.107476
“Dzyaloshinskii-Moriya interaction at epitaxial ferromagnet/semiconductor interface”
Shuto Kimura, Michihiro Yamada, Takumi Okuno, Kentarou Sawano, Kohei Hamaya and Kazuya Ando
Physical Review B 108, 094441 (2023).
DOI: 10.1103/PhysRevB.108.094441
2022
“Fabrication of SiGe/Ge microbridges based on Ge-on-Si(110) and observation of resonant light emission”
T. Inoue, Y. Wagatsuma, R. Ikegaya, K. Okada, K. Sawano
Journal of Crystal Growth 590, 126682 (2022).
DOI: 10.1016/j.jcrysgro.2022.126682
“Mechanism of crack formation in strained SiGe(111) layers”
Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano
Journal of Crystal Growth 589, 126672 (2022).
DOI: 10.1016/j.jcrysgro.2022.126672
“Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor”
T. Naito, R. Nishimura, M. Yamada, A. Masago, Y. Shiratsuchi , Y. Wagatsuma, K. Sawano, R. Nakatani, T. Oguchi, and K. Hamaya
Physical Review B 105, 195308 (2022)
DOI: 10.1103/PhysRevB.105.195308
“Strong room-temperature EL emission from Ge-on-Si(111) diodes”
Yuwa Sugiura, Masashi Sasaki, Youya Wagatsuma, Koudai Yamada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
Journal of Crystal Growth 594, 126766 (2022).
DOI: 10.1016/j.jcrysgro.2022.126766
“Temperature Dependence of Two-Terminal Local Magnetoresistance in Co-Based Heusler Alloy/Ge Lateral Spin-Valve Devices”
Michihiro Yamada, Takahiro Naito, Kazuaki Sumi, Kentarou Sawano, and Kohei Hamaya
IEEE Transactions on Magnetics 58, 4100505 (2022).
DOI: 10.1109/TMAG.2022.3145393
“Strain engineering of heteroepitaxial SiGe/Ge on Si with various crystal orientations”
Md. Mahfuz Alam, Youya Wagatsuma, Kazuya Okada, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano
ECS Transactions, 109 (4) 197-204 (2022)
DOI: 10.1149/10904.0197ecst
“Fabrication of Thick SiGe／Ge Multiple Quantum Wells on Ge-on-Si and Their Optical Properties”
Rena Kanesawa, Youya Wagatsuma, Syuya Kikuoka, Yuwa Sugiura, Kentarou Sawano
ECS Transactions, 109 (4) 289-295 (2022)
DOI: 10.1149/10904.0289ecst
“Fabrication of branch-like bridges based on Ge-on-Si (110) and observation of resonant light emission”
Takahiro Inoue, Youya Wagatsuma, Reo Ikegaya, Ayaka Odashima, Masaki Nagao, Kentarou Sawano
ECS Transactions, 109 (4) 297-302 (2022)
DOI: 10.1149/10904.0297ecst
2021
“A drastic increase in critical thickness for strained SiGe by growth on mesa-patterned Ge-on-Si”
Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano
Applied Physics Express 14, 025502 (2021).
DOI: /10.35848/1882-0786/abd4c5
“Enhanced electroluminescence from Ge-on-Si by precise in-situ doping and post-annealing”
Kodai Yamada, Youya Wagatsuma, Kazuya Okada, Yusuke Hoshi, and Kentarou Sawano
Applied Physics Express 14, 045504 (2021).
DOI: /10.35848/1882-0786/abf0df
“Room-temperature two-terminal magnetoresistance ratio reaching 0.1% in semiconductor-based lateral devices with L21-ordered Co2MnSi”
K. Kudo, M. Yamada, S. Honda, Y. Wagatsuma, S. Yamada, K. Sawano, and K. Hamaya
Appl. Phys. Lett. 118, 162404 (2021).
DOI: /10.1063/5.0045233
“Effect of Fe atomic layers at the ferromagnet-semiconductor interface on temperature-dependent spin transport in semiconductors”
M. Yamada, Y. Shiratsuchi, H. Kambe, K. Kudo, S. Yamada, K. Sawano, R. Nakatani and K. Hamaya
J. Appl. Phys. 129, 183901 (2021)
DOI: /10.1063/5.0048321
“Dependences of the hole mobility in the strained Si pMOSFET and gated Hall bars formed on SiGe/Si(110) on the channel direction and the strained Si thickness”
Keisuke Arimoto, Taisuke Fujisawa, Daichi Namiuchi, Atsushi Onogawa, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa
Journal of Crystal Growth 571, 126246 (2021).
DOI: /10.1016/j.jcrysgro.2021.126246
“Magnetoresistance ratio of more than 1% at room temperature in germanium vertical spin-valve devices with Co2FeSi”
A. Yamada, M. Yamada, M. Honda, S. Yamada, K. Sawano, and K. Hamaya
Appl. Phys. Lett. 119, 192404 (2021).
DOI: /10.1063/5.0061504