2010
“Formation of Uniaxially Strained SiGe by Selective Ion Implantation Technique”
Kentarou Sawano, Yusuke Hoshi, Atsunori Yamada, Yoshiyasu Hiraoka, Noritaka Usami, Keisuke Arimoto, Kiyokazu Nakagawa, and Yasuhiro Shiraki
Thin Solid Films 518, 2454 (2010).
DOI:/10.1016/j.tsf.2009.09.157
“Ultrashallow Ohmic contacts for n-type Ge by Sb -doping”
K. Sawano, Y. Hoshi, K. Kasahara, K. Yamane, K. Hamaya, M. Miyao, and Y. Shiraki
Appl. Phys. Lett. 97, 162108 (2010).
DOI:10.1063/1.3503587
“Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si+ implantation”
Y. Hoshi, K. Sawano, A. Yamada, K. Arimoto, N. Usami, K. Nakagawa, Y. Shiraki
Thin Solid Films 518, S162-S164 (2010).
DOI:10.1016/j.tsf.2009.10.079
“Quantum Transport and Cyclotron Resonance Study of Ge/SiGe Quantum Wells in High Magnetic Fields”
N. Miura, N. V. Kozlova, K. Dörr, J. Freudenberger, L. Schultz, O. Drachenko, K. Sawano and Y. Shiraki
Journal of Low Temperature Physics 159, 222-225 (2010).
DOI:10.1007/s10909-009-0122-6
“Landau level crossing and pseudospin phase transitions in Si quantum wells”
Kohei Sasaki, Ryuichi Masutomi, Kiyohiko Toyama, Kentarou Sawano, Yasuhiro Shiraki and Tohru Okamoto
Physica E: Low-dimensional Systems and Nanostructures 42, 1018-1021 (2010).
DOI:10.1016/j.physe.2009.11.027
“Cyclotron resonance of two-dimensional electrons in a Si quantum well”
R. Masutomi, A. Sekine, K. Sasaki, K. Sawano, Y. Shiraki and T. Okamoto
Physica E: Low-dimensional Systems and Nanostructures 42, 1184-1187 (2010).
DOI:10.1016/j.physe.2009.11.075
“Optical anisotropies of Si grown on step-graded SiGe(110) layers”
R. E. Balderas-Navarro, L. F. Lastras-Martínez, K. Arimoto, R. Castro-García, O. Villalobos-Aguilar, A. Lastras-Martínez, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami, and K. Nakajima
Appl. Phys. Lett. 96, 091904 (2010)
DOI:10.1063/1.3339881
“Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique”
Y. Hoshi, K. Sawano, A. Yamada, N. Usami, K. Arimoto, K. Nakagawa, and Y. Shiraki
J. Appl. Phys. 107, 103509 (2010).
DOI:10.1063/1.3374688
“Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe3Si/Si Spin-Valve Devices”
Yuichiro Ando, Kenji Kasahara, Kazutaka Yamane, Kohei Hamaya, Kentarou Sawano, Takashi Kimura, and Masanobu Miyao
Applied Physics Express 3, 093001 (2010).
DOI:10.1143/APEX.3.093001
“Excitonic Aharonov-Bohm effect in isotopically pure 70GeO Si self-assembled type-II quantum dots”
Satoru Miyamoto, Oussama Moutanabbir, Toyofumi Ishikawa, Mikio Eto, Eugene E. Haller, Kentarou Sawano, Yasuhiro Shiraki, and Kohei M. Itoh
Physical Review B 82, 073306 (2010).
DOI:10.1103/PhysRevB.82.0733
“Study of HfO2/Si/Strained-Ge/SiGe Using Angle Resolved X-ray Photoelectron Spectroscopy”
Arata Komatsu, Kentarou Nasu, Yusuke Hoshi, Toru Kurebayashi, Kentarou Sawano, Maksym Myronov, Hiroshi Nohira, and Yasuhiro Shiraki
ECS Trans. 33, 467-472 (2010).
DOI:10.1149/1.3481635
2009
“Local Control of Strain in SiGe by Ion Implantation Technique”
K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami , K. Nakagawa, Y. Shiraki
Journal of Crystal Growth 311, 806-808 (2009).
DOI:10.1016/j.jcrysgro.2008.09.099
“Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures”
K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, N. Usami, K. Arimoto, K. Nakagawa, and Y. Shiraki
Appl. Phys. Lett. 95, 122109 (2009).
DOI:10.1063/1.3229998
“CMP for High Mobility Strained Si/Ge Channels”
Kentarou Sawano, Yasuhiro Shiraki, and Kiyokazu Nakagawa
Mater. Res. Soc. Symp. Proc. 1157, E13-02 (2009)
(2009 MRS Spring Meeting Symposium E, Science and Technology of Chemical Mechanical Planarization (CMP), proceedings, 1157-E13-02)
“Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices”
Y. Shimizu, M. Uematsu, K. M. Itoh, A. Takano, K. Sawano, and Y. Shiraki
Journal of Applied Physics 105, 013504 (2009).
DOI:10.1063/1.3054325
“Fabrication of thin strain-relaxed SiGe buffer layers with high Ge composition by ion implantation method”
Y. Hoshi, K. Sawano, Y. Hiraoka, Y. Sato, Y. Ogawa, A. Yamada, N. Usami, K. Nakagawa, Y. Shiraki
Journal of Crystal Growth 311, 825-828 (2009).
DOI:10.1016/j.jcrysgro.2008.09.100
“Strain relaxation mechanisms in step-graded SiGe/Si(1 1 0) heterostructures grown by gas-source MBE at high temperatures”
Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami, Kazuo Nakajima, Kentarou Sawano, Yasuhiro Shiraki
Journal of Crystal Growth 311, 819-824 (2009).
DOI:10.1016/j.jcrysgro.2008.09.064
“Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal (1 1 0) Si substrates”
Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Noritaka Usami, Kazuo Nakajima
Journal of Crystal Growth 311, 809-813 (2009).
DOI:10.1016/j.jcrysgro.2008.09.061
“Structural and transport properties of strained SiGe grown on V-groove patterned Si(1 1 0) substrates”
Keisuke Arimoto, Genki Kawaguchi, Kana Shimizu, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami, Kazuo Nakajima, Kentarou Sawano, Yasuhiro Shiraki
Journal of Crystal Growth 311, 814-818 (2009).
DOI:10.1016/j.jcrysgro.2008.09.062
“Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier”
Y. Ando, K. Hamaya, K. Kasahara, Y. Kishi, K. Ueda, K. Sawano, T. Sadoh, and M. Miyao
Appl. Phys. Lett. 94, 182105 (2009).
DOI:10.1063/1.3130211
“Insulating phases induced by crossing of partially filled Landau levels in a Si quantum well”
Tohru Okamoto, Kohei Sasaki, Kiyohiko Toyama, Ryuichi Masutomi, Kentarou Sawano, and Yasuhiro Shiraki
Physical Review B 79, 241302(R) (2009).
DOI:10.1103/PhysRevB.79.241302
“Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(1 1 0) substrates”
Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Noritaka Usami, and Kazuo Nakajima
Solid-State Electronics 53, 1135-1143 (2009).
DOI:10.1016/j.sse.2009.05.010
“Probing the Behaviors of Point Defects in Silicon and Germanium Using Isotope Superlattices”
Masashi Uematsu, Miki Naganawa, Yasuo Shimizu, Kohei M. Itoh, Kentarou Sawano, Yasuhiro Shiraki, and Eugene E. Haller
ECS Trans. 25 (3), 51 (2009).
DOI:10.1149/1.3204393
“Well-width dependence of valley splitting in Si/SiGe quantum wells”
Kohei Sasaki, Ryuichi Masutomi, Kiyohiko Toyama, Kentarou Sawano, Yasuhiro Shiraki, and Tohru Okamoto
Appl. Phys. Lett. 95, 222109 (2009).
DOI:10.1063/1.3270539
“Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon”
H. Morishita, L. S. Vlasenko, H. Tanaka, K. Semba, K. Sawano, Y. Shiraki, M. Eto, and K. M. Itoh
Phys. Rev. B 80 205206 (2009).
DOI:10.1103/PhysRevB.80.205206
2008
“On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures”
Kentarou Sawano, Yugo Kunishi, Yuu Satoh, Kiyohiko Toyama, Keisuke Arimoto, Toru Okamoto, Noritaka Usami, Kiyokazu Nakagawa, and Yasuhiro Shiraki
Applied Physics Express 1, 011401 (2008).
DOI:10.1143/APEX.1.011401
“Hole density and strain dependencies of hole effective mass in compressively strained Ge channel structures”
K. Sawano, Y. Kunishi, K. Toyama, T. Okamoto, N. Usami, K. Nakagawa, and Y. Shiraki
Physica E 40, 2122-2124 (2008).
DOI:10.1016/j.physe.2007.10.012
“Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions”
K. Sawano, A. Fukumoto, Y. Hoshi, J. Yamanaka, K. Nakagawa, and Y. Shiraki
Thin Solid Films 517, 87-89 (2008).
DOI:10.1016/j.tsf.2008.08.109
“Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique”
K. Sawano, A. Fukumoto, Y. Hoshi, K. Nakagawa, and Y. Shiraki
Thin Solid Films 517, 353-355 (2008).
DOI:10.1016/j.tsf.2008.08.108
“Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation”
Kentarou Sawano, Yusuke Hoshi, Atsunori Yamada, Yoshiyasu Hiraoka, Noritaka Usami, Keisuke Arimoto, Kiyokazu Nakagawa, Yasuhiro Shiraki
Applied Physics Express 1, 121401 (2008).
DOI:10.1143/APEX.1.121401
“Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices”
Yasuo Shimizu, Masashi Uematsu, Kohei M. Itoh, Akio Takano, Kentarou Sawano, and Yasuhiro Shiraki
Appl. Phys. Express 1, 021401 (2008)
DOI:10.1143/APEX.1.021401
“Room-temperature Transport Properties of High Drift Mobility Two-dimensional Electron Gas Confined in a Strained Si Quantum Well”
Maksym Myronov, Kentarou Sawano, Kohei M. Itoh, and Yasuhiro Shiraki
Appl. Phys. Express 1, 021402 (2008).
DOI:10.1143/APEX.1.021402
“Valley-splitting edge-channel transport in a Si/SiGe quantum Hall system”
K. Sugihara, K. Hamaya, M. Kawamura, K. Sawano, Y. Shiraki and T. Machida
Physica E: Low-dimensional Systems and Nanostructures 40, 1523-1525 (2008).
DOI:10.1016/j.physe.2007.09.079
“New Structure of Polycrystalline Silicon Thin-Film Transistor with Germanium Layer in Source/Drain Regions for Low-Temperature Device Fabrication”
Minoru Mitsui, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, and Yasuhiro Shiraki
Jpn. J. Appl. Phys. 47, 1547-1549 (2008).
DOI:10.1143/JJAP.47.1547
“Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature”
M. Myronov, K. Sawano, Y. Shiraki, T. Mouri, K.M. Itoh
Physica E: Low-dimensional Systems and Nanostructures 40, 1935-1937 (2008).
DOI:10.1016/j.physe.2007.08.142
“Observation of Pronounced Effect of Compressive Strain on Room-Temperature Transport Properties of Two-Dimensional Hole Gas in a Strained Ge Quantum Well”
Maksym Myronov, Kentarou Sawano, Kohei M. Itoh, and Yasuhiro Shiraki
Appl. Phys. Express 1, 051402 (2008).
DOI:10.1143/APEX.1.051402
“Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy”
Motoki Satoh, Keisuke Arimoto, Kiyokazu Nakagawa, Shinji Koh, Kentarou Sawano, Yasuhiro Shiraki, Noritaka Usami, and Kazuo Nakajima
Jpn. J. Appl. Phys. 47, pp. 4630-4633 (2008).
DOI:10.1143/JJAP.47.4630
“Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels”
Yusuke Hoshi, Kentarou Sawano, Yoshiyasu Hiraoka, Yuu Satoh, Yuta Ogawa, Atsunori Yamada, Noritaka Usami, Kiyokazu Nakagawa, Yasuhiro Shiraki
Applied Physics Express 1, 081401 (2008).
DOI:10.1143/APEX.1.081401
“Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si QuantumWell”
Kiyohiko Toyama, Takahisa Nishioka, Kentarou Sawano, Yasuhiro Shiraki, and Tohru Okamoto
Physical Review Letters 101, 016805 (2008).
DOI:10.1103/PhysRevLett.101.016805
“Microstructure difference of Ni induced poly-crystallized SiGe by changing the annealing atmosphere”
Junji Yamanaka, Tadashi Horie, Minoru Mitsui, Keisuke Arimoto, Kiyokazu Nakagawa, Tetsuya Sato, Kentarou Sawano, Yasuhiro Shiraki, Tomokazu Moritani, Minoru Doi,
Thin Solid Films 517, 232–234 (2008).
DOI:10.1016/j.tsf.2008.08.017
“Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials”
Noritaka Usami, Ryota Nihei, Yukinaga Azuma, Ichiro Yonenaga, Kazuo Nakajima, Kentarou Sawano, Yasuhiro Shiraki
Thin Solid Films 517, 14–16 (2008).
DOI:10.1016/j.tsf.2008.08.044
“Growth temperature dependence of the crystalline morphology of SiGe films grown on Si(110) substrates with compositionally step-graded buffer”
Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Noritaka Usami, Kazuo Nakajima
Thin Solid Films 517, 235–238 (2008).
DOI:10.1016/j.tsf.2008.08.130
“Characterizations of polycrystalline SiGe films on SiO2 grown by gas-source molecular beam deposition”
M. Mitsui, M. Tamoto, K. Arimoto, J. Yamanaka, K. Nakagawa, T. Sato, N. Usami, K. Sawano, Y. Shiraki
Thin Solid Films 517, 254–256 (2008).
DOI:10.1016/j.tsf.2008.08.023
“Investigation of strain states and thermal stability of strained-Si-on-Insulator (sSOI) structures”
Y. Hoshi, A. Fukumoto, K. Sawano, I. Cayrefourcq, M. Yoshimi, Y. Shiraki
Thin Solid Films 517, 340–342 (2008).
DOI:10.1016/j.tsf.2008.08.154
“Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion”
Miki Naganawa, Yasuo Shimizu, Masashi Uematsu, Kohei M. Itoh, Kentarou Sawano, Yasuhiro Shiraki, and Eugene E. Haller
Appl. Phys. Lett. 93, 191905 (2008).
DOI:10.1063/1.3025892
“Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors”
Yuki Niiyama, Shinya Ootomo, Jiang Li, Hiroshi Kambayashi, Takehiko Nomura, Seikoh Yoshida, Kentarou Sawano, and Yasuhiro Shiraki
Japanese Journal of Applied Physics 47, 5409-5416 (2008).
DOI:10.1143/JJAP.47.5409
2007
“Fabrication of Ge channels with extremely high compressive strain and their magnetotransport properties”
K. Sawano, Y. Kunishi, K. Toyama, T. Okamoto, N. Usami, K. Nakagawa, and Y. S
hiraki
Journal of Crystal Growth 301-302, 339-342 (2007).
DOI:10.1016/j.jcrysgro.2006.11.144
“Strained-Si n-channel metal-oxide-semiconductor field-effect-transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique”
K. Sawano, A. Fukumoto, Y. Hoshi, Y. Shiraki, J. Yamanaka, and K. Nakagawa
Appl. Phys. Lett. 90, 202101 (2007).
DOI:10.1063/1.2739324
“Fabrication of SiGe Virtual Substrates by Ion Implantation Technique”
K. Sawano, Y. Shiraki, and K. Nakagawa
ECS Transaction 11, 75 (2007).
DOI: 10.1149/1.2778367
“Growth temperature dependence of lattice structures of SiGe / graded buffer structures grown on Si(110) substrates by gas-source MBE”
Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Noritaka Usami, and Kazuo Nakajima
Journal of Crystal Growth 301-302, 343-348 (2007).
DOI:10.1016/j.jcrysgro.2006.11.135
“Enhancement of hole conductance in the Ge quantum well of a SiGe heterostructure via realization of double-side modulation doping”
M. Myronov, K. Sawano and Y. Shiraki
Semiconductor Science and Technology 22, 63-67 (2007)
DOI:10.1088/0268-1242/22/1/S15
“Spin-dependent nonlocal resistance in a Si/SiGe quantum Hall conductor”
K. Hamaya, K. Sugihara, H. Takahashi, S. Masubuchi, M. Kawamura, T. Machida, K. Sawano, and Y. Shiraki
Phys. Rev. B 75, 033307 (2007).
DOI:10.1103/PhysRevB.75.033307
“Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures”
M. Myronov, K. Sawano, Y. Shiraki, T. Mouri and K. M. Itoh
Appl. Phys. Lett. 91, 082108 (2007).
DOI:10.1063/1.2773744
“Strain State and Thermal Stability of Strained-Si-on-Insulator Substrates
Yusuke Hoshi, Atsushi Fukumoto, Kentarou Sawano, Ian Cayrefourcq, Makoto Yoshimi, and Yasuhiro Shiraki
Jpn. J. Appl. Phys. 46, 7294-7296 (2007).
DOI: 10.1143/JJAP.46.7294
“Spin dependence of edge-channel transport in silicon-based quantum Hall systems”
K. Hamaya, S. Masubuchi, K. Sawano, Y, Shiraki, and T. Machida
physica status solidi (c) 3, 4251-4254 (2007) doi.org/10.1002/pssc.200672805
DOI:10.1002/pssc.200672805
2006
“Strain and hole-density dependence of hole mobility in strained-Ge modulation-doped structures”
K. Sawano, H. Satoh, Y. Kunishi, and Y. Shiraki, and K. Nakagawa
Semiconductor Science and Technology 22, 161-163 (2006).
DOI:10.1109/istdm.2006.246606
“Strain field and related roughness formation in SiGe relaxed buffer layers”
K. Sawano, N. Usami, K. Arimoto, K. Nakagawa, and Y. Shiraki
Thin Solid Films 508, 117-119 (2006).
DOI:10.1016/j.tsf.2005.08.414
“Mobility enhancement in strained-Ge modulation-doped structures by planarization of SiGe buffer layers”
K. Sawano, H. Satoh, K. Nakagawa, and Y. Shiraki
Physica E: Low-dimensional Systems and Nanostructures 32, 520-523 (2006).
DOI:10.1016/j.physe.2005.12.138
“Magnetotransport properties of Ge channels with extremely high compressive strain”
K. Sawano, Y. Kunishi, Y. Shiraki, K. Toyama, T. Okamoto, N. Usami, and K. Nakagawa
Appl. Phys. Lett. 89, 162103 (2006).
DOI:10.1063/1.2354467
“Spin-dependent edge-channel transport in a Si/SiGe quantum Hall system”
K. Hamaya, S. Masubuchi, K. Hirakawa, S. Ishida, Y. Arakawa, K. Sawano, Y. Shiraki, and T. Machida,
Phys. Rev. B 73, 121304 (R) (2006).
DOI:10.1103/PhysRevB.73.121304
“Enhancement of hole mobility and carrier density in Ge quantum well SiGe heterostructure via implementation of double-sides modulation doping”
M. Myronov, K. Sawano, Y. Shiraki,
Appl. Phys. Lett. 88, 252115 (2006).
DOI:10.1063/1.2215633
“Determination of lattice parameters of SiGe/Si(110) heterostructures”
K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, S. Koh, and N. Usami
Thin Solid Films 508, 132-135 (2006).
DOI:10.1016/j.tsf.2005.08.412
“Dislocation distribution in a strain-relaxed SiGe thin film grown on an ion-implanted Si substrate”
J. Yamanaka, K. Sawano, K. Suzuki, K. Nakagawa, Y. Ozawa, T. Hattori, and Y. Shiraki
Thin Solid Films 508, 103-106 (2006).
DOI:10.1016/j.tsf.2005.08.392
“Strain dependence of hole Hall mobility in compressively strained Ge channel heterostructures”
Y. Abe, H. Satoh, Y. Ozawa, K. Sawano, K. Nakagawa, and Y. Shiraki
Thin Solid Films 508, 355-358 (2006).
DOI:10.1016/j.tsf.2005.08.404
“Influence of Ge atoms on mobility and junction properties of thin-film transistors fabricated on solid-phase crystallized poly-SiGe”
Minoru Mitsui, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, and Yasuhiro Shiraki
Appl. Phys. Lett. 89, 192102 (2006).
DOI:10.1063/1.2385086
2005
“Observation of Strain Field Fluctuation in SiGe Relaxed Buffer Layers and its Influence on Overgrown Structures”
K. Sawano, N. Usami, K. Arimoto, S. Koh, K. Nakagawa, and Y. Shiraki
Materials Science in Semiconductor Processing 8, 177-180 (2005).
DOI:10.1016/j.mssp.2004.09.100
“Strain-field evaluation of strain-relaxed thin SiGe layers fabricated by ion-implantation method”
Kentarou Sawano, Yusuke Ozawa, Atsushi Fukumoto, Noritaka Usami, Junji Yamanaka, Kumiko Suzuki, Keisuke Arimoto, Kiyokazu Nakagawa, and Yasuhiro Shiraki
Jpn. J. Appl. Phys. 44, L1316-1319 (2005).
DOI:10.1143/JJAP.44.L1316
“Mobility enhancement in strained Ge heterostructures by planarization of SiGe buffer layers grown on Si substrates”
Kentarou Sawano, Yasuhiro Abe, Hikaru Satoh, Kiyokazu Nakagawa, and Yasuhiro Shiraki
Jpn. J. Appl. Phys. 44, L1320-1322 (2005).
DOI:10.1143/JJAP.44.L1320
“Compressive strain dependence of hole mobility in strained Ge channels”
K. Sawano, Y. Abe, H. Satoh, Y. Shiraki, and K. Nakagawa
Appl. Phys. Lett. 87, 192102 (2005).
DOI:10.1063/1.2126114
“Thickness dependence of strain field distribution in SiGe relaxed buffer layers”
Kentarou Sawano, Noritaka Usami, Keisuke Arimoto, Kiyokazu Nakagawa, Yasuhiro Shiraki
Jpn. J. Appl. Phys. 44, 8445-8447 (2005).
DOI:10.1143/JJAP.44.8445
“Quantitative coverage and stability of hydrogen-passivation layers on HF-etched Si(1-x)Gex surface”
M. Wilde, K. Fukutani, K. Sawano, S. Koh, and Y. Shiraki
J. Appl. Phys. 98, 023503 (2005).
DOI:10.1063/1.1978968
“Changes in elastic deformation of strained Si by microfabrication”
K. Arimoto, D. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano, S. Koh, Y. Shiraki, and N. Usami
Materials Science in Semiconductor Processing 8, 181-185 (2005).
DOI:10.1016/j.mssp.2004.09.037
2004
“Formation of thin SiGe virtual substrates by ion implantation into Si substrates”
K. Sawano, S. Koh, Y. Hirose, T. Hattori, K. Nakagawa, and Y. Shiraki
Appl. Surf. Sci. 224, 99-103 (2004).
DOI:10.1016/j.apsusc.2003.08.093
“Fabrication of high-quality strain-relaxed thin SiGe layers on ion implanted Si substrates”
K. Sawano, S. Koh, Y. Shiraki, Y. Ozawa, T. Hattori, J. Yamanaka, K. Suzuki, K. Arimoto, K. Nakagawa, and N. Usami
Appl. Phys. Lett. 85, 2514-2516 (2004).
DOI:10.1063/1.1794353
“Observation of Dislocations in strain-relaxed silicon-germanium thin films with flat surfaces grown on ion-implanted silicon substrates”
J. Yamanaka, K. Sawano, K. Nakagawa, K. Suzuki, Y. Ozawa, S. Koh, T. Hattori, and Y. Shiraki
Materials Science in Semiconductor Processing 7, 389-392 (2004).
DOI:10.1016/j.mssp.2004.09.008
“Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates”
J. Yamanaka, K. Sawano, K. Nakagawa, K. Suzuki, Y. Ozawa, S. Koh, T. Hattori, and Y. Shiraki
Material Transactions 45, 2644-2646 (2004).
DOI: 10.2320/matertrans.45.2644“Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer”,
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano, and Y. Shiraki
Appl. Phys. Lett. 84, 2802 (2004).
DOI:10.1063/1.1697632
“Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime”
N. Usami, A. Alguno, K. Sawano, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima,
Thin Sold Films 451/452, 604-607 (2004).
DOI:10.1016/j.tsf.2003.11.027
“Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 °C”
H. Nohira, T. Kuroiwa, M. Nakamura, Y. Hirose, J. Mitsui, W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, K. Sawano, K. Nakagawa, Y. Shiraki, T. Hattori,
Applied Surface Science 237, 134-138 (2004).
DOI:10.1016/j.apsusc.2004.06.042
2003
“Stacked Ge islands for photovoltaic applications”
N. Usami, A. Alguno, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano, and Y. Shiraki,
Sci. Tech. Adv. Mat. 4, 367-370 (2003).
DOI:10.1016/S1468-6996(03)00054-8
“Mobility Enhancement in Strained Si Modulation Doped Structures by Chemical Mechanical Polishing”
K. Sawano, S. Koh, Y. Shiraki, Y. Hirose, T. Hattori, and K. Nakagawa
Appl. Phys. Lett. 82, 412 (2003).
DOI:10.1063/1.1539557
“Relaxation enhancement of SiGe thin layers by ion implantation into Si substrates”
K. Sawano, Y. Hirose, S. Koh, K. Nakagawa, T. Hattori, and Y. Shiraki
J. Cryst. Growth 251, 685-688 (2003).
DOI:10.1016/S0022-0248(02)02287-X
“Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures”
K. Sawano, K. Arimoto, Y. Hirose, S. Koh, N. Usami, K. Nakagawa, T. Hattori, and Y. Shiraki
J. Cryst. Growth 251, 693-696 (2003).
DOI:10.1016/S0022-0248(02)02286-8
“Surface Planarization of Strain-Relaxed SiGe Buffer Layers by CMP and Post Cleaning”
K. Sawano, K. Kawaguchi, S. Koh, Y. Hirose, T. Hattori, K. Nakagawa, and Y. Shiraki
J. Electrochem. Soc. 150, G376-G379 (2003).
DOI:10.1149/1.1576773
“Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates”
K. Sawano, Y. Hirose, Y. Ozawa, S. Koh, J. Yamanaka, K. Nakagawa, T. Hattori, and Y. Shiraki
Jpn. J. Appl. Phys. 42, 735 (2003).
DOI:10.1143/jjap.42.l735
“In-plane strain fluctuation in strained-Si / SiGe heterostructures”
K. Sawano, S. Koh, Y. Shiraki, N. Usami, and K. Nakagawa
Appl. Phys. Lett., 83, 4339 (2003).
DOI:10.1063/1.1629142
2002
“Surface Smoothing of SiGe Strain-relaxed Buffer Layers by Chemical Mechanical Polishing”
K. Sawano, K. Kawaguchi, T. Ueno, S. Koh, K. Nakagawa, and Y. Shiraki,
Materials Science & Engineering B 89, 406 (2002).
DOI:10.1016/S0921-5107(01)00843-1
2001
“On the Origin of Drastic Enhancement of the No-Phonon Transition in GaAsP/GaP Indirect Quantum Wells with an Ultrathin AlP Layer”
K. Sawano, M. Ikeda, K. Ohdaira, K. Arimoto, N. Usami, and Y. Shiraki
Journal of the Korean Physical Society 39, No. 3, 440 (2001).