2023年5月21日～25日にイタリアのコモにて開催された国際会議 Joint ISTDM-ICSI 2023 において、D2の井上君、M2の金澤さんと菊岡君が発表しました。
Takahiro Inoue, Youya Wagatsuma, Reo Ikegaya, Ayaka Odashima, Masaki Nagao, Kentarou Sawano
“Fabrication of Si/Ge microbridges based on Ge-on-Si (110) and effect of bridge length”
Shuya Kikuoka, Youya Wagatsuma, Yuwa Sugiura, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
“Diode characteristics and room temperature EL emission of strained SiGe/Ge quantum well LEDs”
R. Kanesawa, Y. Wagatsuma, S. Kikuoka, Y. Sugiura, M. Yamada, K. Hamaya and K. Sawano
“Fabrication of crack free strained SiGe/Ge multiple quantum wells on Ge on Si(111) by the patterning method”
