論文(～2024, 3)
2024
“Enhancement of room temperature electroluminescence from strained SiGe/Ge(111) multiple quantum wells light emitting diodes”
Shuya Kikuoka, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya, Kentarou Sawano
Materials Science in Semiconductor Processing 176, 108299 (2024).
DOI: /10.1016/j.mssp.2024.108299
“Fabrication of crack-free strained SiGe/Ge multiple quantum wells on Ge-on-Si(111) by the patterning method”
R. Kanesawa, S. Kikuoka, Y. Shibahara, Y. Wagatsuma, M. Yamada, K. Hamaya and K. Sawano
Materials Science in Semiconductor Processing 177, 108300 (2024).
DOI: /10.1016/j.mssp.2024.108300
“Growth of all-epitaxial Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si”
Atsuya Yamada, Michihiro Yamada, Shuhei Kusumoto, Julio A. do Nascimento, Connor Murrill, Shinya Yamada, Kentarou Sawano, Vlado K. Lazarov, Kohei Hamaya
Materials Science in Semiconductor Processing 173, 108140 (2024).
DOI: /10.1016/j.mssp.2024.108140
“Al–Ge-paste-induced liquid phase epitaxy of Si-rich SiGe(111) for epitaxial Co-based Heusleralloys”
Michihiro Yamada, Shota Suzuki, Ai I. Osakae, Kazuaki Sumi, Takahiro Inoue, Azusa N. Hattori, Shinya Yamada, Kentarou Sawano, Marwan Dhamrin, Kohei Hamaya
Materials Science in Semiconductor Processing 174, 108232 (2024).
DOI: /10.1016/j.mssp.2024.108232
“Effect of Sn doping on low-temperature growth of Ge epilayers on half-metallic Co2FeSi”
Michihiro Yamada, Shuhei Kusumoto, Atsuya Yamada, Kentarou Sawano, Kohei Hamaya
Materials Science in Semiconductor Processing 171, 107987 (2024).
DOI: 10.1016/j.mssp.2023.107987
2023
“Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain”
Keisuke Yamamoto, Takuro Matsuo, Michihiro Yamada, Youya Wagatsuma, Kentarou Sawano, Kohei Hamaya
Materials Science in Semiconductor Processing 167, 107763 (2023).
DOI: 10.1016/j.mssp.2023.107763
“Tellurium nanosheets with structural anisotropy formed from defective MoTe2 multilayers”
Shuto Muranaka, Satoshi Nogamida, Kosuke O. Hara, Kentarou Sawano and Yusuke Hoshi
AIP Advances 13, 075219 (2023).
DOI: 10.1063/5.0155417
“Significant reduction of crack propagation in the strained SiGe/Ge(111) induced by the local growth on the depth controlled area patterning”
Youya Wagatsuma, Rena Kanesawa, Md. Mahfuz Alam, Kazuya Okada, Takahiro Inoue, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
Applied Physics Express 16, 015502 (2023)
DOI: 10.35848/1882-0786/aca751
“Influences of lattice strain and SiGe buffer layer thickness on electrical characteristics of strained Si/SiGe/Si(110) heterostructures”
Taisuke Fujisawa, Atsushi Onogawa, Miki Horiuchi, Yuichi Sano, Chihiro Sakata, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa and Keisuke Arimoto
Materials Science in Semiconductor Processing 161 (2023) 107476
DOI: 10.1016/j.mssp.2023.107476
2022
“Fabrication of SiGe/Ge microbridges based on Ge-on-Si(110) and observation of resonant light emission”
T. Inoue, Y. Wagatsuma, R. Ikegaya, K. Okada, K. Sawano
Journal of Crystal Growth 590, 126682 (2022).
DOI: 10.1016/j.jcrysgro.2022.126682
“Mechanism of crack formation in strained SiGe(111) layers”
Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano
Journal of Crystal Growth 589, 126672 (2022).
DOI: 10.1016/j.jcrysgro.2022.126672
“Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor”
T. Naito, R. Nishimura, M. Yamada, A. Masago, Y. Shiratsuchi , Y. Wagatsuma, K. Sawano, R. Nakatani, T. Oguchi, and K. Hamaya
Physical Review B 105, 195308 (2022)
DOI: 10.1103/PhysRevB.105.195308
“Strong room-temperature EL emission from Ge-on-Si(111) diodes”
Yuwa Sugiura, Masashi Sasaki, Youya Wagatsuma, Koudai Yamada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
Journal of Crystal Growth 594, 126766 (2022).
DOI: 10.1016/j.jcrysgro.2022.126766
“Temperature Dependence of Two-Terminal Local Magnetoresistance in Co-Based Heusler Alloy/Ge Lateral Spin-Valve Devices”
Michihiro Yamada, Takahiro Naito, Kazuaki Sumi, Kentarou Sawano, and Kohei Hamaya
IEEE Transactions on Magnetics 58, 4100505 (2022).
DOI: 10.1109/TMAG.2022.3145393
“Strain engineering of heteroepitaxial SiGe/Ge on Si with various crystal orientations”
Md. Mahfuz Alam, Youya Wagatsuma, Kazuya Okada, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano
ECS Transactions, 109 (4) 197-204 (2022)
DOI: 10.1149/10904.0197ecst
“Fabrication of Thick SiGe／Ge Multiple Quantum Wells on Ge-on-Si and Their Optical Properties”
Rena Kanesawa, Youya Wagatsuma, Syuya Kikuoka, Yuwa Sugiura, Kentarou Sawano
ECS Transactions, 109 (4) 289-295 (2022)
DOI: 10.1149/10904.0289ecst
“Fabrication of branch-like bridges based on Ge-on-Si (110) and observation of resonant light emission”
Takahiro Inoue, Youya Wagatsuma, Reo Ikegaya, Ayaka Odashima, Masaki Nagao, Kentarou Sawano
ECS Transactions, 109 (4) 297-302 (2022)
DOI: 10.1149/10904.0297ecst
2021
“A drastic increase in critical thickness for strained SiGe by growth on mesa-patterned Ge-on-Si”
Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano
Applied Physics Express 14, 025502 (2021).
DOI: /10.35848/1882-0786/abd4c5
“Enhanced electroluminescence from Ge-on-Si by precise in-situ doping and post-annealing”
Kodai Yamada, Youya Wagatsuma, Kazuya Okada, Yusuke Hoshi, and Kentarou Sawano
Applied Physics Express 14, 045504 (2021).
DOI: /10.35848/1882-0786/abf0df
“Room-temperature two-terminal magnetoresistance ratio reaching 0.1% in semiconductor-based lateral devices with L21-ordered Co2MnSi”
K. Kudo, M. Yamada, S. Honda, Y. Wagatsuma, S. Yamada, K. Sawano, and K. Hamaya
Appl. Phys. Lett. 118, 162404 (2021).
DOI: /10.1063/5.0045233
“Effect of Fe atomic layers at the ferromagnet-semiconductor interface on temperature-dependent spin transport in semiconductors”
M. Yamada, Y. Shiratsuchi, H. Kambe, K. Kudo, S. Yamada, K. Sawano, R. Nakatani and K. Hamaya
J. Appl. Phys. 129, 183901 (2021)
DOI: /10.1063/5.0048321
“Dependences of the hole mobility in the strained Si pMOSFET and gated Hall bars formed on SiGe/Si(110) on the channel direction and the strained Si thickness”
Keisuke Arimoto, Taisuke Fujisawa, Daichi Namiuchi, Atsushi Onogawa, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa
Journal of Crystal Growth 571, 126246 (2021).
DOI: /10.1016/j.jcrysgro.2021.126246
“Magnetoresistance ratio of more than 1% at room temperature in germanium vertical spin-valve devices with Co2FeSi”
A. Yamada, M. Yamada, M. Honda, S. Yamada, K. Sawano, and K. Hamaya
Appl. Phys. Lett. 119, 192404 (2021).
DOI: /10.1063/5.0061504
2020
“Strain engineering of Si/Ge heterostructures on Ge-on-Si platform”
Kentarou Sawano, Youya Wagatsuma, Md. Mahfuz Alam, Kaisei Omata, Kenta Niikura, Shougo Shibata, Yusuke Hoshi, Michihiro Yamada and Kohei Hamaya
ECS Transactions 98, 267-276 (2020).
DOI: 10.1149/09805.0267ecst
“Nanostructural effect on thermoelectric properties in Si films containing iron silicide nanodots”
Shunya Sakane, Takafumi Ishibe, Tatsuhiko Taniguchi, Takahiro Hinakawa, Ryoya Hosoda, Kosei Mizuta, Md. Mahfuz Alam, Kentarou Sawano, and Yoshiaki Nakamura
Japanese Journal of Applied Physics 59, SFFB01 (2020)
DOI: /10.7567/1347-4065/ab5b58
“Hole mobility enhancement observed in (110)-oriented strained Si”
Keisuke Arimoto, Naoto Utsuyama, Shohei Mitsui, Kei Satoh, Takane Yamada, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, and Kiyokazu Nakagawa
Japanese Journal of Applied Physics 59, SGGK06 (2020)
DOI: /10.7567/1347-4065/ab6591
“Hole mobility in Strained Si/Relaxed SiGe/Si(110) hetero structures studied by gated Hall measurements”
Daichi Namiuchi, Atsushi Onogawa, Taisuke Fujisawa, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa, and Keisuke Arimoto
Materials Science in Semiconductor Processing 113, 105052 (2020)
DOI: /10.1016/j.mssp.2020.105052
“Enhanced photoluminescence from strained Ge-on-Insulator surface-passivated with hydrogenated amorphous Si”
Kenta Niikura, Natsuki Yamahata, Yusuke Hoshi, Tsukasa Takamura, Kimihiko Saito, Makoto Konagai and Kentarou Sawano
Materials Science in Semiconductor Processing 115, 105104 (2020)
DOI: /10.1016/j.mssp.2020.105104
“Inverse local magnetoresistance effect up to room temperature in ferromagnet-semiconductor lateral spin-valve devices”
Takahiro Naito, Michihiro Yamada, Shinya Yamada, Takeshi Kanashima, Kentarou Sawano and Kohei Hamaya
Materials Science in Semiconductor Processing 113, 105046 (2020)
DOI: /10.1016/j.mssp.2020.105046
“Crack formation in strained SiGe grown on Ge-on-Si(111) and its suppression by patterning substrates”
Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
Materials Science in Semiconductor Processing, 117, 105153 (2020)
DOI: /10.1016/j.mssp.2020.105153
“Large, tunable valley splitting and single-spin relaxation mechanisms in a Si/SixGe1-x quantum dot”
Arne Hollmann, Tom Struck, Veit Langrock, Andreas Schmidbauer, Floyd Schauer, Tim Leonhardt, Kentarou Sawano, Helge Riemann, Nikolay V. Abrosimov, Dominique Bougeard, and Lars R. Schreiber
Phys. Rev. Applied 13, 034068 (2020).
DOI: /10.1103/PhysRevApplied.13.034068
“Suppression of Donor-Driven Spin Relaxation in Strained Si0.1Ge0.9”
T. Naito, M. Yamada, S. Yamada, K. Sawano and K. Hamaya
Physical Review Applied 13, 054025 (2020).
DOI: /10.1103/PhysRevApplied.13.054025
“Increased critical thickness for strained SiGe on Ge-on-Si(111)”
Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
ECS Transactions 98, 499 (2020).
DOI: 10.1149/09805.0499ecst
“Strong room-temperature electroluminescence from Ge-on-Si by precise in-situ doping control”
Kodai Yamada, Yusuke Hoshi and Kentarou Sawano
ECS Transactions 98, 513 (2020).
DOI: 10.1149/09805.0513ecst
Engineering Strain, Defects and Electronic Properties of (110)-Oriented Strained Si
K. Arimoto, J. Yamanaka, K. O. Hara, K. Sawano, N. Usami and K. Nakagawa
ECS Transactions 98, 277 (2020).
DOI: 10.1149/09805.0277ecst
“Thermoelectric Si1−xGex and Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators”
Tatsuhiko Taniguchi, Takafumi Ishibe, Ryoya Hosoda, Youya Wagatsuma, Md. Mahfuz Alam, Kentarou Sawano, Mutsunori Uenuma, Yukiharu Uraoka, Yuichiro Yamashita, Nobuya Mori, and Yoshiaki Nakamura
Appl. Phys. Lett. 117, 141602 (2020)
DOI: /10.1063/5.0023820
“Reduced Inhomogeneous Broadening in Hexagonal Boron Nitride-Encapsulated MoTe2 Monolayers by Thermal Treatment”
Shunya Hayashida, Risa Saitoh, Kenji Watanabe, Takashi Taniguchi, Kentarou Sawano, and Yusuke Hoshi
ACS Appl. Electron. Mater. 2, 2739−2744 (2020).
DOI: /10.1021/acsaelm.0c00452
“Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe”
Tom Struck, Arne Hollmann, Floyd Schauer, Olexiy Fedorets, Andreas Schmidbauer, Kentarou Sawano, Helge Riemann, Nikolay V. Abrosimov, Łukasz Cywiński, Dominique Bougeard and Lars R. Schreiber
npj Quantum Information 6, 40 (2020).
DOI: /10.1038/s41534-020-0276-2
“Spin injection through energy-band symmetry matching with high spin polarization in atomically controlled ferromagnet/ferromagnet/ semiconductor structures”
Michihiro Yamada, Fumiaki Kuroda, Makoto Tsukahara, Shinya Yamada, Tetsuya Fukushima, Kentarou Sawano, Tamio Oguchi and Kohei Hamaya
NPG Asia Materials (2020) 12:47
DOI: /10.1038/s41427-020-0228-5
2019
“Fabrication of Ge MOS with low interface trap density by ALD of Al2O3 on epitaxially grown Ge”
Ryotaro Matsuoka, Eriko Shigesawa, Satoru Miyamoto, Kentarou Sawano and Kohei M Itoh
Semiconductor Science and Technology 34, 014004 (5pp) (2019)
DOI:/10.1088/1361-6641/aaf19b
“Effect of strain on the binding energy of Ge 2p and 3d core level”
R. Sano, S. Konoshima, K. Sawano and H. Nohira
Semiconductor Science and Technology 34, 014006 (2019)
DOI:/10.1088/1361-6641/aaf3ee
“Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled Si nanostructures”
Shunya Sakane, Takafumi Ishibe, Tatsuhiko Taniguchi, Nobuyasu Naruse, Yutaka Mera, Takeshi Fujita, Md. Mahfuz Alam, Kentarou Sawano, Nobuya Mori, Yoshiaki Nakamura
Materials Today Energy 13, 56-63 (2019).
DOI:/10.1016/j.mtener.2019.04.014
“Critical thickness of strained Si1-xGex on Ge(111) and Ge-on-Si(111)”
Md. Mahfuz Alam, Youya Wagatsuma, Kazuya Okada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya, and Kentarou Sawano
Applied Physics Express 12, 081005 (2019)
DOI: 10.7567/1882-0786/ab2db8
“Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices”
Y. Fujita, M. Yamada, M. Tsukahara, T. Naito, S. Yamada, K. Sawano, and K. Hamaya
Physical Review B 100, 024431 (2019).
DOI: 10.1103/PhysRevB.100.024431
“High thermoelectric performance in high crystallinity epitaxial Si films containing silicide nanodots with low thermal conductivity”
Shunya Sakane, Takafumi Ishibe, Takahiro Hinakawa, Nobuyasu Naruse , Yutaka Mera, Md. Mahfuz Alam, Kentarou Sawano, and Yoshiaki Nakamura
Appl. Phys. Lett. 115, 182104 (2019).
DOI: 10.1063/1.5126910
“Semiballistic thermal conduction in polycrystalline SiGe nanowires”
Noboru Okamoto, Ryoto Yanagisawa, Roman Anufriev, Md. Mahfuz Alam, Kentarou Sawano, Masashi Kurosawa, and Masahiro Nomura
Appl. Phys. Lett. 115, 253101 (2019).
DOI: 10.1063/1.5130659
“Conduction Type Control of Ge-on-Insulator : Combination of Smart-CutTM and Defect Elimination”
K. Yamamoto, K. Nakae, H. Akamine, D. Wang, H. Nakashima, Md M. Alam, K. Sawano, Z. Xue, M. Zhang, and Z. Di
ECS Transactions, 93 (1) 73-77 (2019)
DOI: 10.1149/09301.0073ecst
2018
“Hole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-source molecular beam epitaxy”
Motoki Satoh, Keisuke Arimoto, Junji Yamanaka, Kentarou Sawano, Yasuhiro Shiraki, and Kiyokazu Nakagawa
Journal of Applied Physics 123, 161529 (2018).
DOI: /10.1063/1.5004077
“Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts”
Michihiro Yamada, Yuichi Fujita, Shinya Yamada, Kentarou Sawano and Kohei Hamaya
Materials 11, 150 (2018).
DOI: /10.3390/ma11010150
“Resonant light emission from uniaxially tensile-strained Ge microbridges”
Peiji Zhou, Xuejun Xu, Sho Matsushita, Kentarou Sawano and Takuya Maruizumi
Japanese Journal of Applied Physics 57, 04FH10 (2018).
DOI: /10.7567/JJAP.57.04FH10
Growth and characterization of low composition Ge, x in epi-Si1-xGex (x ≤ 10 %) active layer for fabrication of hydrogenated bottom solar cell.
M. Ajmal Khan, R. Sato, K. Sawano, P. Sichanugrist, A. Lukyanov and Y. Ishikawa
Journal of Physics D: Applied Physics 51, 185107 (11 pp) (2018).
DOI: /10.1088/1361-6463/aab80d
“Formation of uniaxial strained Ge via control of dislocation alignment in Si/Ge heterostructures”
Shiori Konoshima, Eisuke Yonekura, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, and Kentarou Sawano
AIP Advances 8, 075112 (9 pages) (2018).
DOI: /10.1063/1.5011397
“Pure spin current transport in a SiGe alloy”
Takahiro Naito, Michihiro Yamada, Makoto Tsukahara, Shinya Yamada, Kentarou Sawano, and Kohei Hamaya
Applied Physics Express 11, 053006 (2018)
DOI: /10.7567/APEX.11.053006
“Correlation between spin transport signal and Heusler/semiconductor interface quality in lateral spin-valve devices”
B. Kuerbanjiang, Y. Fujita, M. Yamada, S. Yamada, A. M. Sanchez, P. J. Hasnip, A. Ghasemi, D. Kepaptsoglou, G. Bell, K. Sawano, K. Hamaya, and V. K. Lazarov
Phys. Rev. B 98, 115304 (2018)
DOI: /10.1103/PhysRevB.98.115304
“Spin transport and relaxation in germanium”
Kohei Hamaya, Yuichi Fujita, Michihiro Yamada, Makoto Kawano, Shinya Yamada and Kentarou Sawano
Journal of Physics D: Applied Physics 51, 393001 (2018)
DOI: /10.1088/1361-6463/aad542
“Structural properties of compressive strained Ge channels fabricated on Si (111) and Si (100)”
Md. Mahfuz Alam, Yusuke Hoshi and Kentarou Sawano
Semiconductor Science and Technology 33, 124008 (6pp) (2018)
DOI:/10.1088/1361-6641/aae575
“Effects of post annealing on in-situ n-doped Ge-on-Si”
Yuta Kumazawa, Xuejun Xu, Takuya Maruizumi, Kentarou Sawano
Semiconductor Science and Technology 33, 124006 (7pp) (2018)
DOI:/10.1088/1361-6641/aae62e
“Stability of strain in Si layers formed on SiGe/Si(110) heterostructures”
Keisuke Arimoto, Atsushi Onogawa, Shingo Saito, Takane Yamada, Kei Sato, Naoto Utsuyama, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O Hara, Kentarou Sawano and Kiyokazu Nakagawa
Semiconductor Science and Technology 33, 124016 (8pp) (2018)
DOI:/10.1088/1361-6641/aaeb10
“Study on Al2O3/Ge interface formed by ALD directly on epitaxial Ge”
Eriko Shigesawa, Ryotaro Matsuoka, Masashi Fukumoto, Ryosuke Sano, Kohei M Itoh, Hiroshi Nohira and Kentarou Sawano
Semiconductor Science and Technology 33, 124020 (4pp) (2018)
DOI:/10.1088/1361-6641/aaec51
“Observation of local magnetoresistance signals in a SiGe-based lateral spin-valve device”
Michihiro Yamada, Takahiro Naito, Makoto Tsukahara, Shinya Yamada, Kentarou Sawano and Kohei Hamaya
Semiconductor Science and Technology 33, 114009 (4pp) (2018)
DOI:/10.1088/1361-6641/aae34f
2017
“Light emission enhancement from Ge quantum dots with phosphorous δ-doped neighboring confinement structures”
K. Sawano, T. Nakama, K. Mizutani, N. Harada, X. Xu, T. Maruizumi
Journal of Crystal Growth 477, 131–134 (2017)
DOI: 10.1016/j.jcrysgro.2017.03.008
“Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE”
Keisuke Arimoto, Sosuke Yagi, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Noritaka Usami, Kiyokazu Nakagawa
Journal of Crystal Growth 468, 625-629 (2017)
DOI: 10.1016/j.jcrysgro.2016.12.076
“TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing”
Junji Yamanaka, Shigenori Inoue, Keisuke Arimoto, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Atsushi Moriya, Yasuhiro Inokuchi, Yasuo Kunii
Journal of Materials Science and Chemical Engineering, 2017, 5, 15-25
DOI: 10.4236/msce.2017.51003
“Large impact of impurity concentration on spin transport in degenerate n-Ge”
M. Yamada, Y. Fujita, M. Tsukahara, S. Yamada, K. Sawano, and K. Hamaya
Physical Review B 95, 161304 (R) 1~5 (2017)
DOI: 10.1103/PhysRevB.95.161304
“Thermoelectric Properties of Epitaxial b-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement”
Tatsuhiko Taniguchi, Shunya Sakane, Shunsuke Aoki, Ryo Okuhata, Takafumi Ishibe, Kentaro Watanabe, Takeyuki Suzuki, Takeshi Fujita, Kentarou Sawano, and Yoshiaki Nakamura
Journal of Electronic Materials, Vol. 46, No. 5, 3235-3241 (2017)
DOI: 10.1007/s11664-016-4997-0
“Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1−xCx heterostructures using the defect control by ion implantation technique”
You Arisawa, Kentarou Sawano, Noritaka Usami
Journal of Crystal Growth 468, 601-604 (2017).
DOI: 10.1016/j.jcrysgro.2016.12.065
“Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates”
You Arisawa, Yusuke Hoshi, Kentarou Sawano, Junji Yamanaka, Keisuke Arimoto, Chiaya Yamamoto, Noritaka Usami
Materials Science in Semiconductor Processing 70, 127-132 (2017)
DOI: 10.1016/j.mssp.2016.11.024
“Highly n-doped germanium-on-insulator microdisks with circular Bragg gratings”
Xuejun Xu, Hideaki Hashimoto, Kentarou Sawano, and Takuya Maruizumi
Optics Express 25, 6550-6560 (2017)
DOI: 10.1364/OE.25.006550
“Pattern-dependent anisotropic stress evaluation in SiGe epitaxially grown on a Si substrate with selective Ar+ ion implantation using oil-immersion Raman spectroscopy”
Shotaro Yamamoto, Daisuke Kosemura, Kazuma Takeuchi, Seiya Ishihara, Kentarou Sawano, Hiroshi Nohira and Atsushi Ogura
Japanese Journal of Applied Physics 56, 051301 (2017)
DOI: /10.7567/JJAP.56.051301
“Spin Transport and Relaxation up to 250 K in Heavily Doped n-Type Ge Detected Using Co2FeAl0.5Si0.5 Electrodes”
Y. Fujita, M. Yamada, M. Tsukahara, T. Oka, S. Yamada, T. Kanashima, K. Sawano, and K. Hamaya
Physical Review Applied 8, 014007 (2017)
DOI: 10.1103/PhysRevApplied.8.014007
“Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements”
Michihiro Yamada, Makoto Tsukahara, Yuichi Fujita, Takahiro Naito, Shinya Yamada, Kentarou Sawano, and Kohei Hamaya
Applied Physics Express 10, 093001 (2017)
DOI: /10.7567/APEX.10.093001
“Control of electrical properties in Heusler-alloy/Ge Schottky tunnel contacts by using phosphorous δ-doping with Si-layer insertion”
Michihiro Yamada, Yuichi Fujita, Shinya Yamada, Takeshi Kanashima, Kentarou Sawano, Kohei Hamaya
Materials Science in Semiconductor Processing 70, 83–85 (2017)
DOI: /10.1016/j.mssp.2016.07.025
“Fabrication of high-quality strain relaxed SiGe(110) films by controlling defects via ion implantation”
M. Kato, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano
Journal of Crystal Growth 477, 197-200 (2017).
DOI: /10.1016/j.jcrysgro.2017.05.022
“Local anisotropic strain evaluation in thin Ge epitaxial film using SiGe stressor template grown on Ge substrate by selective ion implantation”
Kazuma Takeuchi, Ryo Yokogawa, Seiya Ishihara, Shotaro Yamamoto, Shiori Konoshima, Kentarou Sawano, and Atsushi Ogura
Japanese Journal of Applied Physics 56, 110313 (2017).
DOI: /10.7567/JJAP.56.110313
2016
“Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator”
K. Sawano, Y. Hoshi, S. Kubo, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Hamaya, M. Miyao, Y. Shiraki
Thin Solid Films 613, 24-28 (2016).
DOI: 10.1016/j.tsf.2015.11.020
“Straining of Group IV Semiconductor Materials for Bandgap and Mobility Engineering”
Kentarou Sawano, Xuejun Xu, Shiori Konoshima, Nayuta Shitara, Takeshi Ohno, and Takuya Maruizumi
ECS transaction 75, 191-197 (2016)
DOI: 10.1149/07504.0191ecst
“Anisotropic Strain Introduction into Si/Ge Hetero Structures”
Kentarou Sawano, Shiori Konoshima, Junji Yamanaka, Keisuke Arimoto, and Kiyokazu Nakagawa
ECS transaction 75, 563-569 (2016)
DOI: 10.1149/07508.0563ecst
“Compressively strained Si/Si1-xCx heterostructures formed on Ar ion implanted Si(100) substrates”
Yusuke Hoshi, You Arisawa, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, and Noritaka Usami
Japanese Journal of Applied Physics 55, 031302 (2016).
DOI: 10.7567/JJAP.55.031302
“Suppression of segregation of the phosphorus δ-doping layer in germanium by incorporation of carbon”
Michihiro Yamada, Kentarou Sawano, Masashi Uematsu, Yasuo Shimizu, Koji Inoue, Yasuyoshi Nagai, and Kohei M. Itoh
Japanese Journal of Applied Physics 55, 031304-1~5 (2016).
DOI: 10.7567/JJAP.55.031304
“Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells”
Mohammad Maksudur Rahman, Ming-Yi Lee, Yi-Chia Tsai, Akio Higo, Halubai Sekhar, Makoto Igarashi1, Mohd Erman Syazwan, Yusuke Hoshi, Kentarou Sawano, Noritaka Usami, Yiming Li and Seiji Samukawa
Progress in Photovoltaics: Research and Applications 24, 774-780 (2016).
DOI : 10.1002/pip.2726
“Enhanced light emission from germanium microdisks on silicon by surface passivation through thermal oxidation”
Xuejun Xu, Hideaki Hashimoto, Kentarou Sawano, Hiroshi Nohira, and Takuya Maruizumi
Applied Physics Express 9, 052101-1~4 (2016)
DOI: 10.7567/APEX.9.052101
“A low-temperature fabricated gate-stack structure for Ge-based MOSFET with ferromagnetic epitaxial Heusler-alloy/Ge electrodes”
Yuichi Fujita, Michihiro Yamada, Yuta Nagatomi, Keisuke Yamamoto, Shinya Yamada, Kentarou Sawano, Takeshi Kanashima, Hiroshi Nakashima, and Kohei Hamaya
Japanese Journal of Applied Physics 55, 063001-1~4 (2016).
DOI:10.7567/JJAP.55.063001
“Temperature-independent spin relaxation in heavily doped n-type germanium”
Y. Fujita, M. Yamada, S. Yamada, T. Kanashima, K. Sawano, and K. Hamaya
Physical Review B 94, 245302-1~5 (2016)
DOI: 10.1103/PhysRevB.94.245302
“Thermal conduction in Si and SiGe phononic crystals explained by phonon mean free path spectrum”
Masahiro Nomura, Junki Nakagawa, Kentarou Sawano, Jeremie Maire, and Sebastian Volz
Applied Physics Letters 109, 173104-1~4 (2016)
DOI: 10.1063/1.4966190
“Enhanced light emission from N-doped Ge microdisks by thermal oxidation”
Hideaki Hashimoto, Xuejun Xu, Kentarou Sawano, and Takuya Maruizumi
ECS Transactions, 75(8): 689-693 (2016)
DOI: 10.1149/07508.0689ecst
“Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials”
S. Yamasaka, K. Watanabe, S. Sakane, S. Takeuchi, A. Sakai, K. Sawano, and Y. Nakamura
Scientific Report 6, 22838-1-8 (2016).
DOI: 10.1038/srep22838
2015
“Ultralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion”
Xuejun Xu, Xiaoxin Wang, Keisuke Nishida, Koki Takabayashi, Kentarou Sawano, Yasuhiro Shiraki, Haofeng Li, Jifeng Liu, and Takuya Maruizumi
Applied Physics Express 8, 092101 (2015)
DOI: 10.7567/APEX.8.092101
“Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium”
Michihiro Yamada, Kentarou Sawano, Masashi Uematsu and Kohei M. Itoh
Appl. Phys. Lett. 107, 132101 (2015)
DOI: 10.1063/1.4931939
2014
“Uniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates”
K. Sawano, Y. Hoshi, S. Kubo, S. Yamada, K. Nakagawa, Y. Shiraki
Journal of Crystal Growth 401, 758–761 (2014).
DOI: 10.1016/j.jcrysgro.2014.02.014
“Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy”
Keisuke Nishida, Xuejun Xu, Kentarou Sawano, Takuya Maruizumi, Yasuhiro Shiraki
Thin Solid Films 557, 66-69 (2014)
DOI: 10.1016/j.tsf.2013.10.082
“Greatly enhanced generation efficiency of pure spin currents in Ge using Heusler compound Co2FeSi electrodes”
Kenji Kasahara, Yuichi Fujita, Shinya Yamada, Kentarou Sawano, Masanobu Miyao, and Kohei Hamaya
Applied Physics Express 7, 033002 (2014)
DOI: 10.7567/APEX.7.033002
“Room-temperature electrical creation of spin accumulation in n-Ge using highly resistive Fe3Si/n+-Ge Schottky-tunnel contacts”
Kohei Hamaya, Gotaro Takemoto, Yuzo Baba, Kenji Kasahara, Shinya Yamada, Kentarou Sawano, Masanobu Miyao
Thin Solid Films 557 (2014) 382–385
DOI: 10.1016/j.tsf.2013.08.120
“Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer”
T. Obata, K. Takeda, J. Kamioka, T. Kodera, W.M. Akhtar, K. Sawano, S. Oda, Y. Shiraki, and S. Tarucha
Proceedings of the 12th Asia Pacific Physics Conference, JPS Conf. Proc. , 012030 (2014)
“Reliable reduction of Fermi-level pinning at atomically matched metal/Ge interfaces by sulfur treatment”
K. Kasahara, S. Yamada, T. Sakurai, K. Sawano, H. Nohira, M. Miyao, and K. Hamaya
Applied Physics Letters 104, 172109 (2014)
DOI: 10.1063/1.4875016
“Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained-Ge/SiGe Quantum Well”
Rai Moriya, Kentarou Sawano, Yusuke Hoshi, Satoru Masubuchi, Yasuhiro Shiraki, Andreas Wild, Christian Neumann, Gerhard Abstreiter, Dominique Bougeard, Takaaki Koga, and Tomoki Machida
Physical Review Letters 113, 086601 (2014).
DOI: 10.1103/PhysRevLett.113.086601
2013
“On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique”
K. Sawano, Y. Hoshi, S. Nagakura, K. Arimoto, K. Nakagawa, N. Usami, Y. Shiraki
Journal of Crystal Growth 378, 251–253 (2013).
DOI: 10.1016/j.jcrysgro.2012.12.100
“Formation of compressively strained SiGe/Si(110) heterostructures and their characterization”
K. Arimoto, T. Obata, H. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano and Y. Shiraki,
J. Cryst. Growth, 362, pp. 282-287 (2013).
doi:10.1016/j.jcrysgro.2011.12.082
”Room-temperature sign reversed spin accumulation signals in silicon-based devices using an atomically smooth Fe3Si/Si(111) contact”
Y. Fujita, S. Yamada, Y. Ando, K. Sawano, H. Itoh, M. Miyao, and K. Hamaya
J. Appl. Phys. 113, 013916 (2013).
DOI: /10.1063/1.4773072
“Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a metal–oxide–semiconductor field effect transistor structure (invited)”
K. Hamaya, Y. Ando, K. Masaki, Y. Maeda, Y. Fujita, S. Yamada, K. Sawano and M. Miyao
J. Appl. Phys. 113, 17C501 (2013).
DOI: /10.1063/1.4793501
“An ultra-thin buffer layer for Ge epitaxial layers on Si”
M. Kawano, S. Yamada, K. Tanikawa, K. Sawano, M. Miyao, and K. Hamaya
Appl. Phys. Lett. 102, 121908 (2013)
doi: 10.1063/1.4798659
“Qualitative study of temperature-dependent spin signals in n-Ge-based lateral devices with Fe3Si/n+-Ge Schottky-tunnel contacts”
K. Hamaya, Y. Baba, G. Takemoto, K. Kasahara, S. Yamada, K. Sawano, and M. Miyao
J. Appl. Phys. 113, 183713 (2013)
doi: 10.1063/1.4804320
“Gas-source MBE growth of strain-relaxed Si1-xCx on Si (100) substrates”
Keisuke Arimoto, Shoichiro Sakai, Hiroshi Furukawa, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami, Yusuke Hoshi, Kentarou Sawano, Yasuhiro Shiraki
Journal of Crystal Growth 378, 212–217 (2013).
doi: 10.1016/j.jcrysgro.2012.12.152
“Formation of compressively strained Si/S1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy”
K. Arimoto, H. Furukawa, J. Yamanaka, C. Yamamoto, K. Nakagawa, N. Usami, K. Sawano, Y. Shiraki
Journal of Crystal Growth 362, 276-281(2013).
DOI: 10.1016/j.jcrysgro.2011.12.084
“AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS”
H. Nohira, A. Komatsu, K. Yamashita, K. Kakushima, H. Iwai, K. Sawano, Y. Shiraki
Journal of Electron Spectroscopy and Related Phenomena 190, 295–301 (2013).
doi: 10.1016/j.elspec.2013.06.010
2012
“Formation of Uniaxially Strained Si/Ge Channels on SiGe Buffers Strain-controlled with Selective Ion Implantation”
K. Sawano, Y. Hoshi, S. Nagakura, K. Arimoto, K. Nakagawa, N. Usami, and Y. Shiraki
ECS Transactions 50 (9), 815-820 (2012).
DOI:10.1149/05009.0815ecst
“Formation of Tensilely Strained Germanium-on-Insulator”
Yusuke Hoshi, Kentarou Sawano, Kohei Hamaya, Masanobu Miyao, and Yasuhiro Shiraki
Applied Physics Express 5, 015701 (2012).
DOI: 10.1143/APEX.5.015701
“Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel“
Y. Ando, K. Kasahara, S. Yamada, Y. Maeda, K. Masaki, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya
Physical Review B 85, 035320 (2012).
DOI: 10.1103/PhysRevB.85.035320
“Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts”
K. Kasahara, Y. Baba, K. Yamane, Y. Ando, S. Yamada, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya
Journal of Applied Physics 111, 07C503 (2012).
DOI: 10.1063/1.3670985
“Experimental and theoretical analysis of the temperature dependence of the two-dimensional electron mobility in a strained Si quantum well”
Takahisa Tanaka, Go Tsuchiya, Yusuke Hoshi, Kentarou Sawano, Yasuhiro Shiraki, and Kohei M. Itoh
Journal of Applied Physics 111, 073715 (2012).
doi: 10.1063/1.3702464
“Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe Heterostructures”
T. Tanaka, Y. Hoshi, K. Sawano, N. Usami, Y. Shiraki, and K. M. Itoh
Appl. Phys. Lett. 100, 222102 (2012).
doi: 10.1063/1.4723690
“Room-Temperature Observation of Size Effects in Photoluminescence of Si0.8Ge0.2/Si Nanocolumns Prepared by Neutral Beam Etching”
Rii Hirano, Satoru Miyamoto, Masahiro Yonemoto, Seiji Samukawa, Kentarou Sawano, Yasuhiro Shiraki, and Kohei M. Itoh
Applied Physics Express 5, 082004 (2012).
doi; 10.1143/APEX.5.082004
“In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system”
Tasuku Chiba, Ryuichi Masutomi, Kentarou Sawano, Yasuhiro Shiraki, and Tohru Okamoto
Physical Review B 86, 045310 (2012).
DOI: 10.1103/PhysRevB.86.045310
“Acceptor-Like States in SiGe Alloy Related to Point Defects Induced by Si+ Ion Implantation”
Motoki Satoh, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, and Yasuhiro Shiraki
Jpn. J. Appl. Phys. 51, 105801 (2012).
DOI: 10.1143/JJAP.51.105801
“Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon”
Y. Ando, S. Yamada, K. Kasahara, K. Sawano, M. Miyao, and K. Hamaya
Appl. Phys. Lett. 101, 232404 (2012)
DOI: 10.1063/1.4769221
2011
“Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels”
K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, K. Arimoto, K. Nakagawa, N. Usami, Y. Shiraki
Microelectronic Engineering 88, 465–468 (2011).
“Formation of ultra-shallow Ohmic contacts on n-Ge by Sb delta-doping”
K. Sawano, Y. Hoshi, K. Kasahara, K. Yamane, K. Hamaya, M. Miyao and Y. Shiraki
MRS Proceedings 1305, aa17-30 (2011)
“Linewidth of Low-Field Electrically Detected Magnetic Resonance of Phosphorus in Isotopically Controlled Silicon”
Hiroki Morishita, Eisuke Abe, Waseem Akhtar, Leonid S. Vlasenko, Akira Fujimoto, Kentarou Sawano, Yasuhiro Shiraki, Lukas Dreher, Helge Riemann, Nikolai V. Abrosimov, Peter Becker, Hans-J. Pohl, Mike L. W. Thewalt, Martin S. Brandt, and Kohei M. Itoh
Applied Physics Express 4, 021302 (2011).
“Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems”
Yun-Sok Shin, Roland Brunner, Akihiro Shibatomi, Toshiaki Obata, Tomohiro Otsuka, Jun Yoneda, Yasuhiro Shiraki, Kentarou Sawano, Yasuhiro Tokura, Yuichi Harada, Koji Ishibashi and Seigo Tarucha
Semiconductor Science and Technology 26, 055004 (2011).
“Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact“
Y. Ando, K. Kasahara, K. Yamane, Y. Baba, Y. Maeda, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya
Appl. Phys. Lett. 99, 012113 (2011).
“Metallic Behavior of Cyclotron Relaxation Time in Two-Dimensional Systems“
Ryuichi Masutomi, Kohei Sasaki, Ippei Yasuda, Akihito Sekine, Kentarou Sawano, Yasuhiro Shiraki, and Tohru Okamoto
Physical Review Letters 106, 196404 (2011).
“Electrical detection of cross relaxation between electron spins of phosphorus and oxygen-vacancy centers in silicon”
W. Akhtar, H. Morishita, K. Sawano, Y. Shiraki, L. S. Vlasenko, and K. M. Itoh
Physical Review B 84, 045204 (2011).
“Line width dependence of anisotropic strain state in SiGe films induced by selective ion implantation”
Y. Hoshi, K. Sawano, A. Yamada, S. Nagakura, N. Usami, K. Arimoto, K. Nakagawa, and Y. Shiraki
Applied Physics Express 4, 095701 (2011).
”Self-diffusion in compressively strained Ge”
Yoko Kawamura, Masashi Uematsu, Yusuke Hoshi, Kentarou Sawano, Maksym Myronov, Yasuhiro Shiraki, Eugene E. Haller, and Kohei M. Itoh
J. Appl. Phys. 110, 034906 (2011).
“Electric-field control of spin accumulation signals in silicon at room temperature”
Y. Ando, Y. Maeda, K. Kasahara, S. Yamada, K. Masaki, Y. Hoshi, K. Sawano, K. Izunome, A. Sakai, M. Miyao, and K. Hamaya
Appl. Phys. Lett. 99, 132511 (2011).
“Mechanism of Fermi level pinning at metal/germanium interfaces”
K. Kasahara, S. Yamada, K. Sawano, M. Miyao, and K. Hamaya
Physical Review B 84, 205301 (2011).